JPH0453108B2 - - Google Patents
Info
- Publication number
- JPH0453108B2 JPH0453108B2 JP13640985A JP13640985A JPH0453108B2 JP H0453108 B2 JPH0453108 B2 JP H0453108B2 JP 13640985 A JP13640985 A JP 13640985A JP 13640985 A JP13640985 A JP 13640985A JP H0453108 B2 JPH0453108 B2 JP H0453108B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- collector
- type
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000000605 extraction Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 39
- 238000001451 molecular beam epitaxy Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13640985A JPS61294860A (ja) | 1985-06-21 | 1985-06-21 | バイポ−ラトランジスタの製造方法 |
| DE8686304785T DE3682959D1 (de) | 1985-06-21 | 1986-06-20 | Bipolarer transistor mit heterouebergang und verfahren zu seiner herstellung. |
| EP86304785A EP0206787B1 (de) | 1985-06-21 | 1986-06-20 | Bipolarer Transistor mit Heteroübergang und Verfahren zu seiner Herstellung |
| US07/048,470 US4746626A (en) | 1985-06-21 | 1987-05-08 | Method of manufacturing heterojunction bipolar transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13640985A JPS61294860A (ja) | 1985-06-21 | 1985-06-21 | バイポ−ラトランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61294860A JPS61294860A (ja) | 1986-12-25 |
| JPH0453108B2 true JPH0453108B2 (de) | 1992-08-25 |
Family
ID=15174484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13640985A Granted JPS61294860A (ja) | 1985-06-21 | 1985-06-21 | バイポ−ラトランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61294860A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2504767B2 (ja) * | 1987-03-16 | 1996-06-05 | 日本電気株式会社 | ヘテロ接合バイポ−ラトランジスタの製造方法 |
| JPH01146362A (ja) * | 1987-12-02 | 1989-06-08 | Nec Corp | ヘテロ接合バイポーラトランジスタの製造方法 |
-
1985
- 1985-06-21 JP JP13640985A patent/JPS61294860A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61294860A (ja) | 1986-12-25 |
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