JPH045274B2 - - Google Patents
Info
- Publication number
- JPH045274B2 JPH045274B2 JP58014699A JP1469983A JPH045274B2 JP H045274 B2 JPH045274 B2 JP H045274B2 JP 58014699 A JP58014699 A JP 58014699A JP 1469983 A JP1469983 A JP 1469983A JP H045274 B2 JPH045274 B2 JP H045274B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- regions
- semiconductor device
- channel portion
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 5
- 230000008929 regeneration Effects 0.000 claims description 3
- 238000011069 regeneration method Methods 0.000 claims description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000002902 bimodal effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34529082A | 1982-02-03 | 1982-02-03 | |
| US345290 | 1982-02-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58151061A JPS58151061A (ja) | 1983-09-08 |
| JPH045274B2 true JPH045274B2 (de) | 1992-01-30 |
Family
ID=23354402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1469983A Granted JPS58151061A (ja) | 1982-02-03 | 1983-02-02 | タ−ンオン及びタ−ンオフできる半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS58151061A (de) |
| CA (1) | CA1201214A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0680817B2 (ja) * | 1985-03-20 | 1994-10-12 | 株式会社東芝 | 半導体装置 |
| JPS624368A (ja) * | 1985-06-28 | 1987-01-10 | シ−メンス、アクチエンゲゼルシヤフト | サイリスタ |
| JP2703240B2 (ja) * | 1987-12-03 | 1998-01-26 | 株式会社東芝 | 導電変調型ｍｏｓｆｅｔ |
| JPH03194971A (ja) * | 1989-12-22 | 1991-08-26 | Meidensha Corp | 電力用半導体素子 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4947715A (de) * | 1972-09-13 | 1974-05-09 | ||
| JPS55107265A (en) * | 1979-02-06 | 1980-08-16 | Siemens Ag | Thyristor |
| JPS5683067A (en) * | 1979-11-09 | 1981-07-07 | Siemens Ag | Thyristor |
-
1983
- 1983-01-28 CA CA000420450A patent/CA1201214A/en not_active Expired
- 1983-02-02 JP JP1469983A patent/JPS58151061A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4947715A (de) * | 1972-09-13 | 1974-05-09 | ||
| JPS55107265A (en) * | 1979-02-06 | 1980-08-16 | Siemens Ag | Thyristor |
| JPS5683067A (en) * | 1979-11-09 | 1981-07-07 | Siemens Ag | Thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1201214A (en) | 1986-02-25 |
| JPS58151061A (ja) | 1983-09-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4816892A (en) | Semiconductor device having turn-on and turn-off capabilities | |
| US6157049A (en) | Electronic device, in particular for switching electric currents, for high reverse voltages and with low on-state losses | |
| JPH0439770B2 (de) | ||
| US4912541A (en) | Monolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabrication | |
| US4942445A (en) | Lateral depletion mode tyristor | |
| US5861638A (en) | Insulated gate bipolar transistor | |
| JP3183055B2 (ja) | 半導体双方向性スイッチおよびその駆動方法 | |
| JPS59215767A (ja) | オン抵抗の低い絶縁ゲ−ト半導体デバイス | |
| US4622568A (en) | Planar field-shaped bidirectional power FET | |
| EP0338312B1 (de) | Bipolarer Transistor mit isolierter Steuerelektrode | |
| US4356503A (en) | Latching transistor | |
| US6137122A (en) | Latch-up controllable insulated gate bipolar transistor | |
| EP0540017B1 (de) | MOS-Gate-kontrollierter Thyristor | |
| JPH045274B2 (de) | ||
| US5350935A (en) | Semiconductor device with improved turn-off capability | |
| EP0144654A2 (de) | Halbleiteranordnung mit dielektrisch isoliertem Feldeffekttransistor mit isoliertem Gate | |
| US4550332A (en) | Gate controlled semiconductor device | |
| US4558243A (en) | Bidirectional power FET with shorting-channel off state | |
| JP2000311998A (ja) | 絶縁ゲートターンオフサイリスタ | |
| EP0081642B1 (de) | Vielzelliger Thyristor | |
| JP2008523586A (ja) | 絶縁ゲート電界効果トランジスタ | |
| JPS6141146B2 (de) | ||
| US5111268A (en) | Semiconductor device with improved turn-off capability | |
| JPS61281557A (ja) | 絶縁ゲ−ト半導体装置 | |
| US4635084A (en) | Split row power JFET |