JPH0451473Y2 - - Google Patents

Info

Publication number
JPH0451473Y2
JPH0451473Y2 JP1986039054U JP3905486U JPH0451473Y2 JP H0451473 Y2 JPH0451473 Y2 JP H0451473Y2 JP 1986039054 U JP1986039054 U JP 1986039054U JP 3905486 U JP3905486 U JP 3905486U JP H0451473 Y2 JPH0451473 Y2 JP H0451473Y2
Authority
JP
Japan
Prior art keywords
substrate
electrode
impedance
high frequency
etching rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1986039054U
Other languages
English (en)
Japanese (ja)
Other versions
JPS62152435U (US20110009641A1-20110113-C00116.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986039054U priority Critical patent/JPH0451473Y2/ja
Publication of JPS62152435U publication Critical patent/JPS62152435U/ja
Application granted granted Critical
Publication of JPH0451473Y2 publication Critical patent/JPH0451473Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP1986039054U 1986-03-19 1986-03-19 Expired JPH0451473Y2 (US20110009641A1-20110113-C00116.png)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986039054U JPH0451473Y2 (US20110009641A1-20110113-C00116.png) 1986-03-19 1986-03-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986039054U JPH0451473Y2 (US20110009641A1-20110113-C00116.png) 1986-03-19 1986-03-19

Publications (2)

Publication Number Publication Date
JPS62152435U JPS62152435U (US20110009641A1-20110113-C00116.png) 1987-09-28
JPH0451473Y2 true JPH0451473Y2 (US20110009641A1-20110113-C00116.png) 1992-12-03

Family

ID=30851870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986039054U Expired JPH0451473Y2 (US20110009641A1-20110113-C00116.png) 1986-03-19 1986-03-19

Country Status (1)

Country Link
JP (1) JPH0451473Y2 (US20110009641A1-20110113-C00116.png)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125831A (ja) * 1982-01-22 1983-07-27 Seiko Epson Corp ドライエツチング装置
JPS58168232A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 平行平板型ドライエツチング装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125831A (ja) * 1982-01-22 1983-07-27 Seiko Epson Corp ドライエツチング装置
JPS58168232A (ja) * 1982-03-30 1983-10-04 Fujitsu Ltd 平行平板型ドライエツチング装置

Also Published As

Publication number Publication date
JPS62152435U (US20110009641A1-20110113-C00116.png) 1987-09-28

Similar Documents

Publication Publication Date Title
US4968374A (en) Plasma etching apparatus with dielectrically isolated electrodes
US4569745A (en) Sputtering apparatus
JPH0119253B2 (US20110009641A1-20110113-C00116.png)
JP3292270B2 (ja) 静電吸着装置
JPH0250197B2 (US20110009641A1-20110113-C00116.png)
JP3949186B2 (ja) 基板載置台、プラズマ処理装置及び半導体装置の製造方法
JPH05160076A (ja) ドライエッチング装置
JPH0451473Y2 (US20110009641A1-20110113-C00116.png)
JPH07169745A (ja) 平行平板型ドライエッチング装置
JP2646261B2 (ja) プラズマ処理装置
JPS6247131A (ja) 反応性イオンエツチング装置
JPH074718B2 (ja) 静電吸着装置
JPS577129A (en) Treating method and device for sputtering
JPH051072Y2 (US20110009641A1-20110113-C00116.png)
JPH07312362A (ja) ドライエッチング装置
JP3363790B2 (ja) ドライエッチング装置
JPH01200629A (ja) ドライエッチング装置
JP2506389B2 (ja) マスク基板のドライエッチング方法
JPH0663107B2 (ja) 平行平板型ドライエツチング装置
JPS62111431A (ja) ドライエツチング装置
JPS59181620A (ja) 反応性イオンエツチング方法
JPS61190132U (US20110009641A1-20110113-C00116.png)
JPS6094827U (ja) プラズマエツチング装置
JPS61113235A (ja) プラズマエツチング装置
JPH05190654A (ja) 静電吸着方法