JPH0450737B2 - - Google Patents
Info
- Publication number
- JPH0450737B2 JPH0450737B2 JP7946088A JP7946088A JPH0450737B2 JP H0450737 B2 JPH0450737 B2 JP H0450737B2 JP 7946088 A JP7946088 A JP 7946088A JP 7946088 A JP7946088 A JP 7946088A JP H0450737 B2 JPH0450737 B2 JP H0450737B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- voltage
- substrate
- type semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7946088A JPH01251619A (ja) | 1988-03-30 | 1988-03-30 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7946088A JPH01251619A (ja) | 1988-03-30 | 1988-03-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01251619A JPH01251619A (ja) | 1989-10-06 |
| JPH0450737B2 true JPH0450737B2 (enExample) | 1992-08-17 |
Family
ID=13690491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7946088A Granted JPH01251619A (ja) | 1988-03-30 | 1988-03-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01251619A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120081764A (ko) * | 2011-01-12 | 2012-07-20 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5508038A (en) * | 1990-04-16 | 1996-04-16 | Alza Corporation | Polyisobutylene adhesives for transdermal devices |
-
1988
- 1988-03-30 JP JP7946088A patent/JPH01251619A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120081764A (ko) * | 2011-01-12 | 2012-07-20 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01251619A (ja) | 1989-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3858237A (en) | Semiconductor integrated circuit isolated through dielectric material | |
| US4219835A (en) | VMOS Mesa structure and manufacturing process | |
| US2795742A (en) | Semiconductive translating devices utilizing selected natural grain boundaries | |
| EP0323549B1 (en) | Bipolar semiconductor device having a conductive recombination layer | |
| US4109274A (en) | Semiconductor switching device with breakdown diode formed in the bottom of a recess | |
| US3729662A (en) | Semiconductor resistor | |
| EP0064613B1 (en) | Semiconductor device having a plurality of element units operable in parallel | |
| JPH0450737B2 (enExample) | ||
| US4514898A (en) | Method of making a self protected thyristor | |
| JPH0450736B2 (enExample) | ||
| US5047831A (en) | Reduced resistance contact region for semiconductor device | |
| US3448354A (en) | Semiconductor device having increased resistance to second breakdown | |
| JP2918925B2 (ja) | 半導体装置 | |
| JPS5834943A (ja) | 半導体装置の製造方法 | |
| US3771028A (en) | High gain, low saturation transistor | |
| JP2760401B2 (ja) | 誘電体分離基板及び半導体装置 | |
| JPS5838939B2 (ja) | 集積回路 | |
| JPH0832049A (ja) | 半導体装置 | |
| JP3417482B2 (ja) | 半導体装置の製造方法 | |
| JP3111489B2 (ja) | 傾斜面を有する絶縁膜の形成方法 | |
| JPH0450738B2 (enExample) | ||
| US3220895A (en) | Fabrication of barrier material devices | |
| JPS5834915A (ja) | 半導体装置の製造方法 | |
| JPS5836495B2 (ja) | 半導体装置の製造方法 | |
| JPH0557740B2 (enExample) |