JPH0450732B2 - - Google Patents

Info

Publication number
JPH0450732B2
JPH0450732B2 JP55035834A JP3583480A JPH0450732B2 JP H0450732 B2 JPH0450732 B2 JP H0450732B2 JP 55035834 A JP55035834 A JP 55035834A JP 3583480 A JP3583480 A JP 3583480A JP H0450732 B2 JPH0450732 B2 JP H0450732B2
Authority
JP
Japan
Prior art keywords
electron beam
electron
bias
intensity distribution
bias voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55035834A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56133825A (en
Inventor
Tadahiro Takigawa
Yoshihide Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP3583480A priority Critical patent/JPS56133825A/ja
Publication of JPS56133825A publication Critical patent/JPS56133825A/ja
Publication of JPH0450732B2 publication Critical patent/JPH0450732B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
JP3583480A 1980-03-21 1980-03-21 Electron beam device Granted JPS56133825A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3583480A JPS56133825A (en) 1980-03-21 1980-03-21 Electron beam device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3583480A JPS56133825A (en) 1980-03-21 1980-03-21 Electron beam device

Publications (2)

Publication Number Publication Date
JPS56133825A JPS56133825A (en) 1981-10-20
JPH0450732B2 true JPH0450732B2 (enrdf_load_stackoverflow) 1992-08-17

Family

ID=12452989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3583480A Granted JPS56133825A (en) 1980-03-21 1980-03-21 Electron beam device

Country Status (1)

Country Link
JP (1) JPS56133825A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4889105B2 (ja) * 2006-08-23 2012-03-07 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140982A (en) * 1974-10-02 1976-04-06 Nippon Electron Optics Lab Denshipuroobusochi niokeru biimuanteikasochi
JPS5489579A (en) * 1977-12-27 1979-07-16 Toshiba Corp Electron ray exposure system
JPS54100263A (en) * 1978-01-24 1979-08-07 Jeol Ltd Electron beam exposure device
JPS556829A (en) * 1978-06-29 1980-01-18 Fujitsu Ltd Electron beam exposure method

Also Published As

Publication number Publication date
JPS56133825A (en) 1981-10-20

Similar Documents

Publication Publication Date Title
JP4171479B2 (ja) 荷電粒子線応用装置及び荷電粒子線応用方法
JP2835097B2 (ja) 荷電ビームの非点収差補正方法
US4321510A (en) Electron beam system
JP4167904B2 (ja) 電子ビーム描画装置及び電子ビーム描画方法
EP0031579B1 (en) Method for determining the optimum operative conditions of the electron gun of an electron beam apparatus
US5148033A (en) Electron beam exposure device and exposure method using the same
US7381951B2 (en) Charged particle beam adjustment method and apparatus
JP2001052642A (ja) 走査型電子顕微鏡及び微細パターン測定方法
US8704175B2 (en) Scanning electron microscope
US5117111A (en) Electron beam measuring apparatus
JP4365579B2 (ja) 電子ビーム露光装置及び電子ビーム露光方法
JP4108604B2 (ja) 荷電粒子ビームカラムのアライメント方法および装置
JPH0450732B2 (enrdf_load_stackoverflow)
JPH0156501B2 (enrdf_load_stackoverflow)
JPH09293477A (ja) 荷電ビームの調整方法
JP3522045B2 (ja) 荷電粒子ビーム露光装置及びその方法
JPH0215544A (ja) 帯電粒子ビーム装置
JP4790411B2 (ja) 非点収差補正方法および電子ビーム描画装置
JPH04116915A (ja) 描画ビーム径調整方法
JPH10284384A (ja) 荷電粒子ビーム露光方法及び装置
JP2002246303A (ja) 焦点調整方法及び電子線描画装置
JPH10289680A (ja) 走査電子顕微鏡
JPH0691001B2 (ja) 荷電ビ−ム制御方法
JP2988883B2 (ja) 荷電ビーム描画装置におけるビーム調整方法
JP2004327118A (ja) 走査型電子顕微鏡のヒステリシス補正方法、及び走査型電子顕微鏡