JPS56133825A - Electron beam device - Google Patents

Electron beam device

Info

Publication number
JPS56133825A
JPS56133825A JP3583480A JP3583480A JPS56133825A JP S56133825 A JPS56133825 A JP S56133825A JP 3583480 A JP3583480 A JP 3583480A JP 3583480 A JP3583480 A JP 3583480A JP S56133825 A JPS56133825 A JP S56133825A
Authority
JP
Japan
Prior art keywords
current
bias
electron beam
electron
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3583480A
Other languages
Japanese (ja)
Other versions
JPH0450732B2 (en
Inventor
Tadahiro Takigawa
Yoshihide Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3583480A priority Critical patent/JPS56133825A/en
Publication of JPS56133825A publication Critical patent/JPS56133825A/en
Publication of JPH0450732B2 publication Critical patent/JPH0450732B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To easily establish the uniformity of beam intensity by obtaining the control value of a bias resistance or a bias voltage in accordance with a beam current under the condition that the intensity distribution and the luminance of an electron beam or beam dimensions are fixed. CONSTITUTION:An electron gun 1 is composed of an LaB monocrystal chip 1a and a Wenhnelt 1b which are arranged by opposing to a positive electrode 2. The electron gun 1 is energized by a high-voltage power source 3 and heated by a heater power source 4 to establish the bias by a resistance circuit 5. A current detector 6 detects an operating current IR. A gold narrow wire 24 and a Faraday cup 26 measuring the intensity distribution and the dimensions of an electron beam are provided at the position of a sample surface and an electron beam current is detected. A bias resistance is adjusted by detecting the beam current after applying deflecting scan to the electron beam and by calculating the optimum bias from a change in current.
JP3583480A 1980-03-21 1980-03-21 Electron beam device Granted JPS56133825A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3583480A JPS56133825A (en) 1980-03-21 1980-03-21 Electron beam device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3583480A JPS56133825A (en) 1980-03-21 1980-03-21 Electron beam device

Publications (2)

Publication Number Publication Date
JPS56133825A true JPS56133825A (en) 1981-10-20
JPH0450732B2 JPH0450732B2 (en) 1992-08-17

Family

ID=12452989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3583480A Granted JPS56133825A (en) 1980-03-21 1980-03-21 Electron beam device

Country Status (1)

Country Link
JP (1) JPS56133825A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053001A (en) * 2006-08-23 2008-03-06 Sii Nanotechnology Inc Charged particle beam device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140982A (en) * 1974-10-02 1976-04-06 Nippon Electron Optics Lab Denshipuroobusochi niokeru biimuanteikasochi
JPS5489579A (en) * 1977-12-27 1979-07-16 Toshiba Corp Electron ray exposure system
JPS54100263A (en) * 1978-01-24 1979-08-07 Jeol Ltd Electron beam exposure device
JPS556829A (en) * 1978-06-29 1980-01-18 Fujitsu Ltd Electron beam exposure method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5140982A (en) * 1974-10-02 1976-04-06 Nippon Electron Optics Lab Denshipuroobusochi niokeru biimuanteikasochi
JPS5489579A (en) * 1977-12-27 1979-07-16 Toshiba Corp Electron ray exposure system
JPS54100263A (en) * 1978-01-24 1979-08-07 Jeol Ltd Electron beam exposure device
JPS556829A (en) * 1978-06-29 1980-01-18 Fujitsu Ltd Electron beam exposure method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053001A (en) * 2006-08-23 2008-03-06 Sii Nanotechnology Inc Charged particle beam device

Also Published As

Publication number Publication date
JPH0450732B2 (en) 1992-08-17

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