JPH0449272B2 - - Google Patents
Info
- Publication number
- JPH0449272B2 JPH0449272B2 JP58046387A JP4638783A JPH0449272B2 JP H0449272 B2 JPH0449272 B2 JP H0449272B2 JP 58046387 A JP58046387 A JP 58046387A JP 4638783 A JP4638783 A JP 4638783A JP H0449272 B2 JPH0449272 B2 JP H0449272B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode film
- electrode
- films
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- HYXIRBXTCCZCQG-UHFFFAOYSA-J [C+4].[F-].[F-].[F-].[F-] Chemical compound [C+4].[F-].[F-].[F-].[F-] HYXIRBXTCCZCQG-UHFFFAOYSA-J 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58046387A JPS59172274A (ja) | 1983-03-18 | 1983-03-18 | 光起電力装置の製造方法 |
| US06/589,886 US4542578A (en) | 1983-03-18 | 1984-03-15 | Method of manufacturing photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58046387A JPS59172274A (ja) | 1983-03-18 | 1983-03-18 | 光起電力装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59172274A JPS59172274A (ja) | 1984-09-28 |
| JPH0449272B2 true JPH0449272B2 (US07655688-20100202-C00086.png) | 1992-08-11 |
Family
ID=12745726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58046387A Granted JPS59172274A (ja) | 1983-03-18 | 1983-03-18 | 光起電力装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4542578A (US07655688-20100202-C00086.png) |
| JP (1) | JPS59172274A (US07655688-20100202-C00086.png) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4950614A (en) * | 1984-05-15 | 1990-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a tandem type semiconductor photoelectric conversion device |
| US4663494A (en) * | 1984-07-19 | 1987-05-05 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| US4746962A (en) * | 1984-08-29 | 1988-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| US4694317A (en) * | 1984-10-22 | 1987-09-15 | Fuji Photo Film Co., Ltd. | Solid state imaging device and process for fabricating the same |
| DE3650362T2 (de) * | 1986-01-06 | 1996-01-25 | Semiconductor Energy Lab | Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren. |
| DE3650363T2 (de) * | 1986-01-06 | 1996-01-25 | Semiconductor Energy Lab | Photoelektrische Umwandlungsvorrichtung und ihr Herstellungsverfahren. |
| US4769086A (en) * | 1987-01-13 | 1988-09-06 | Atlantic Richfield Company | Thin film solar cell with nickel back |
| DE3714920C1 (de) * | 1987-05-05 | 1988-07-14 | Messerschmitt Boelkow Blohm | Verfahren zur Herstellung einer Duennschicht-Solarzellenanordnung |
| FR2640809B1 (fr) * | 1988-12-19 | 1993-10-22 | Chouan Yannick | Procede de gravure d'une couche d'oxyde metallique et depot simultane d'un film de polymere, application de ce procede a la fabrication d'un transistor |
| US5103268A (en) * | 1989-03-30 | 1992-04-07 | Siemens Solar Industries, L.P. | Semiconductor device with interfacial electrode layer |
| US5510644A (en) * | 1992-03-23 | 1996-04-23 | Martin Marietta Corporation | CDTE x-ray detector for use at room temperature |
| JP3653800B2 (ja) * | 1995-06-15 | 2005-06-02 | 株式会社カネカ | 集積化薄膜太陽電池の製造方法 |
| US6265652B1 (en) * | 1995-06-15 | 2001-07-24 | Kanegafuchi Kagaku Kogyo Kabushiki Kabushiki Kaisha | Integrated thin-film solar battery and method of manufacturing the same |
| US5922142A (en) * | 1996-11-07 | 1999-07-13 | Midwest Research Institute | Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making |
| DE19711319C1 (de) * | 1997-03-18 | 1998-03-12 | Daimler Benz Aerospace Ag | Solarmodul und Verfahren zu seiner Herstellung |
| JPH11103079A (ja) * | 1997-09-26 | 1999-04-13 | Sanyo Electric Co Ltd | 集積型光起電力装置の製造方法 |
| US6248950B1 (en) * | 1998-02-21 | 2001-06-19 | Space Systems/Loral, Inc. | Solar array augmented electrostatic discharge for spacecraft in geosynchronous earth orbit |
| US6468828B1 (en) | 1998-07-14 | 2002-10-22 | Sky Solar L.L.C. | Method of manufacturing lightweight, high efficiency photovoltaic module |
| FR2828957A1 (fr) * | 2001-08-24 | 2003-02-28 | Commissariat Energie Atomique | Procede de mise en forme d'une couche mince et de formation d'une prise de contact |
| US20060266407A1 (en) * | 2005-03-10 | 2006-11-30 | Lichy Joseph I | Apparatus and method for electrically connecting photovoltaic cells in a photovoltaic device |
| KR100856326B1 (ko) * | 2006-07-19 | 2008-09-03 | 삼성전기주식회사 | 레이저 리프트 오프를 이용한 유전체 박막을 갖는 박막 커패시터 내장된 인쇄회로기판 제조방법, 및 이로부터 제조된 박막 커패시터 내장된 인쇄회로기판 |
| US20080128020A1 (en) * | 2006-11-30 | 2008-06-05 | First Solar, Inc. | Photovoltaic devices including a metal stack |
| US20090242020A1 (en) * | 2008-04-01 | 2009-10-01 | Seung-Yeop Myong | Thin-film photovoltaic cell, thin-film photovoltaic module and method of manufacturing thin-film photovoltaic cell |
| EP2278632A4 (en) * | 2008-04-30 | 2013-11-27 | Mitsubishi Electric Corp | PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| EP2450964A4 (en) * | 2009-06-30 | 2013-11-06 | Lg Innotek Co Ltd | PHOTOVOLTAIC POWER GENERATION DEVICE AND METHOD FOR THE PRODUCTION THEREOF |
| DE202010013161U1 (de) | 2010-07-08 | 2011-03-31 | Oerlikon Solar Ag, Trübbach | Laserbearbeitung mit mehreren Strahlen und dafür geeigneter Laseroptikkopf |
| US20120042927A1 (en) * | 2010-08-20 | 2012-02-23 | Chungho Lee | Photovoltaic device front contact |
| KR20120095790A (ko) * | 2011-02-21 | 2012-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 장치 |
| US9000288B2 (en) | 2011-07-22 | 2015-04-07 | Space Systems/Loral, Llc | Current collector bar and grid pattern for a photovoltaic solar cell |
| WO2013189605A2 (en) | 2012-06-20 | 2013-12-27 | Tel Solar Ag | Laser scribing system |
| US9627565B2 (en) | 2013-11-27 | 2017-04-18 | Space Systems/Loral, Llc | Integral corner bypass diode interconnecting configuration for multiple solar cells |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120180A (en) * | 1979-03-09 | 1980-09-16 | Sanyo Electric Co Ltd | Fabricating method of photovoltaic device |
| JPS57176778A (en) * | 1981-03-31 | 1982-10-30 | Rca Corp | Solar battery array |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4281208A (en) * | 1979-02-09 | 1981-07-28 | Sanyo Electric Co., Ltd. | Photovoltaic device and method of manufacturing thereof |
| US4292092A (en) * | 1980-06-02 | 1981-09-29 | Rca Corporation | Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery |
-
1983
- 1983-03-18 JP JP58046387A patent/JPS59172274A/ja active Granted
-
1984
- 1984-03-15 US US06/589,886 patent/US4542578A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55120180A (en) * | 1979-03-09 | 1980-09-16 | Sanyo Electric Co Ltd | Fabricating method of photovoltaic device |
| JPS57176778A (en) * | 1981-03-31 | 1982-10-30 | Rca Corp | Solar battery array |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59172274A (ja) | 1984-09-28 |
| US4542578A (en) | 1985-09-24 |
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