JPH0448623U - - Google Patents

Info

Publication number
JPH0448623U
JPH0448623U JP9028890U JP9028890U JPH0448623U JP H0448623 U JPH0448623 U JP H0448623U JP 9028890 U JP9028890 U JP 9028890U JP 9028890 U JP9028890 U JP 9028890U JP H0448623 U JPH0448623 U JP H0448623U
Authority
JP
Japan
Prior art keywords
emitter
collector
base
lateral transistor
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9028890U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9028890U priority Critical patent/JPH0448623U/ja
Publication of JPH0448623U publication Critical patent/JPH0448623U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP9028890U 1990-08-28 1990-08-28 Pending JPH0448623U (US07166745-20070123-C00016.png)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9028890U JPH0448623U (US07166745-20070123-C00016.png) 1990-08-28 1990-08-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9028890U JPH0448623U (US07166745-20070123-C00016.png) 1990-08-28 1990-08-28

Publications (1)

Publication Number Publication Date
JPH0448623U true JPH0448623U (US07166745-20070123-C00016.png) 1992-04-24

Family

ID=31824908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9028890U Pending JPH0448623U (US07166745-20070123-C00016.png) 1990-08-28 1990-08-28

Country Status (1)

Country Link
JP (1) JPH0448623U (US07166745-20070123-C00016.png)

Similar Documents

Publication Publication Date Title
GB1524592A (en) Bipolar type semiconductor devices
JP2002043573A (ja) 半導体装置および半導体装置の製造方法
JPH0448623U (US07166745-20070123-C00016.png)
FR2363897A1 (fr) Dispositif semi-conducteur monolithique comportant un moyen de protection contre les surtensions
JPS5596675A (en) Semiconductor device
UST104803I4 (en) Self-aligned process for providing an improved high performance bipolar transistor
JPH03283470A (ja) ツェナーダイオード
JPH055373B2 (US07166745-20070123-C00016.png)
JPH0521442A (ja) 半導体装置
JPS63292673A (ja) 横型バイポ−ラトランジスタ
JPS5916414B2 (ja) 半導体装置
UST106101I4 (en) Structure of an improved bipolar transistor
JP2513474B2 (ja) 半導体集積回路
JPS6138198Y2 (US07166745-20070123-C00016.png)
JP3068510B2 (ja) 半導体装置
JPH05315549A (ja) 半導体装置
JPS5855651Y2 (ja) 半導体装置
JPS5972167A (ja) ラテラルｐｎｐトランジスタ
JPH04303962A (ja) 半導体装置
JPS6020954Y2 (ja) 半導体装置
JP2634932B2 (ja) 半導体装置
JPH0165152U (US07166745-20070123-C00016.png)
JPH02125335U (US07166745-20070123-C00016.png)
JPS62188156U (US07166745-20070123-C00016.png)
JPH0244354U (US07166745-20070123-C00016.png)