JPH0445991B2 - - Google Patents
Info
- Publication number
- JPH0445991B2 JPH0445991B2 JP57204923A JP20492382A JPH0445991B2 JP H0445991 B2 JPH0445991 B2 JP H0445991B2 JP 57204923 A JP57204923 A JP 57204923A JP 20492382 A JP20492382 A JP 20492382A JP H0445991 B2 JPH0445991 B2 JP H0445991B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- energy gap
- optical energy
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 63
- 230000003287 optical effect Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204923A JPS5997514A (ja) | 1982-11-22 | 1982-11-22 | 太陽電池の製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57204923A JPS5997514A (ja) | 1982-11-22 | 1982-11-22 | 太陽電池の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5997514A JPS5997514A (ja) | 1984-06-05 |
| JPH0445991B2 true JPH0445991B2 (zh) | 1992-07-28 |
Family
ID=16498601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57204923A Granted JPS5997514A (ja) | 1982-11-22 | 1982-11-22 | 太陽電池の製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5997514A (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4547621A (en) * | 1984-06-25 | 1985-10-15 | Sovonics Solar Systems | Stable photovoltaic devices and method of producing same |
| JPH0195770U (zh) * | 1987-12-17 | 1989-06-26 | ||
| JPH02122575A (ja) * | 1988-10-31 | 1990-05-10 | Kyocera Corp | 光電変換装置 |
| JP2008115460A (ja) | 2006-10-12 | 2008-05-22 | Canon Inc | 半導体素子の形成方法及び光起電力素子の形成方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56130466A (en) * | 1980-03-17 | 1981-10-13 | Canon Inc | Film forming method |
| JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
| JPS58144470A (ja) * | 1981-12-16 | 1983-08-27 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | 光応答性無定形合金の化学相沈着製造方法 |
| JPS5855328B2 (ja) * | 1978-09-20 | 1983-12-09 | 日野自動車株式会社 | デイ−ゼルエンジンのピストン |
| JPS5913617A (ja) * | 1982-07-16 | 1984-01-24 | Agency Of Ind Science & Technol | 微結晶シリコンを含むシリコン薄膜の製造法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855328U (ja) * | 1981-10-09 | 1983-04-14 | 三洋電機株式会社 | 切換装置 |
-
1982
- 1982-11-22 JP JP57204923A patent/JPS5997514A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855328B2 (ja) * | 1978-09-20 | 1983-12-09 | 日野自動車株式会社 | デイ−ゼルエンジンのピストン |
| JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
| JPS56130466A (en) * | 1980-03-17 | 1981-10-13 | Canon Inc | Film forming method |
| JPS58144470A (ja) * | 1981-12-16 | 1983-08-27 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | 光応答性無定形合金の化学相沈着製造方法 |
| JPS5913617A (ja) * | 1982-07-16 | 1984-01-24 | Agency Of Ind Science & Technol | 微結晶シリコンを含むシリコン薄膜の製造法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5997514A (ja) | 1984-06-05 |
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