JPH044431U - - Google Patents

Info

Publication number
JPH044431U
JPH044431U JP4614490U JP4614490U JPH044431U JP H044431 U JPH044431 U JP H044431U JP 4614490 U JP4614490 U JP 4614490U JP 4614490 U JP4614490 U JP 4614490U JP H044431 U JPH044431 U JP H044431U
Authority
JP
Japan
Prior art keywords
semiconductor integrated
integrated circuit
transistor
mos transistor
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4614490U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4614490U priority Critical patent/JPH044431U/ja
Publication of JPH044431U publication Critical patent/JPH044431U/ja
Pending legal-status Critical Current

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  • Manipulation Of Pulses (AREA)
  • Logic Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図aはこの考案の一実施例の半導体集積回
路の回路図、第1図bは第1図の半導体集積回路
の電圧波形図、第2図は第2の実施例の回路図、
第3図aは従来の半導体集積回路の回路図、第3
図bは従来の半導体集積回路の電圧波形図である
。 M1,M4……P型MOSトランジスタ、M2
,M3……N型MOSトランジスタ、IN……入
力端子、OUT1,OUT2……出力端子。
FIG. 1a is a circuit diagram of a semiconductor integrated circuit according to an embodiment of this invention, FIG. 1b is a voltage waveform diagram of the semiconductor integrated circuit of FIG. 1, and FIG. 2 is a circuit diagram of a second embodiment.
Figure 3a is a circuit diagram of a conventional semiconductor integrated circuit;
FIG. b is a voltage waveform diagram of a conventional semiconductor integrated circuit. M1, M4...P-type MOS transistor, M2
, M3...N-type MOS transistor, IN...input terminal, OUT1, OUT2...output terminal.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ソースをVDDに接続しているP型MOSトラ
ンジスタのゲートとドレインを短絡した点と、ソ
ースをGNDに接続しているN型MOSトランジ
スタのゲートとドレインを短絡した点との間にM
OSトランジスタを配置し、そのMOSトランジ
スタのゲートを入力端子に、ソースとドレインを
出力端子にすることにより、2つの対称的な波形
を出力することを特徴とする半導体集積回路。
There is an M
A semiconductor integrated circuit characterized in that an OS transistor is arranged, the gate of the MOS transistor is used as an input terminal, and the source and drain are used as output terminals, thereby outputting two symmetrical waveforms.
JP4614490U 1990-04-26 1990-04-26 Pending JPH044431U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4614490U JPH044431U (en) 1990-04-26 1990-04-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4614490U JPH044431U (en) 1990-04-26 1990-04-26

Publications (1)

Publication Number Publication Date
JPH044431U true JPH044431U (en) 1992-01-16

Family

ID=31560964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4614490U Pending JPH044431U (en) 1990-04-26 1990-04-26

Country Status (1)

Country Link
JP (1) JPH044431U (en)

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