JPH0262835U - - Google Patents
Info
- Publication number
- JPH0262835U JPH0262835U JP14096688U JP14096688U JPH0262835U JP H0262835 U JPH0262835 U JP H0262835U JP 14096688 U JP14096688 U JP 14096688U JP 14096688 U JP14096688 U JP 14096688U JP H0262835 U JPH0262835 U JP H0262835U
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- source
- emitter
- gate
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Electronic Switches (AREA)
Description
第１図は本考案の第１の実施例を示す回路構成
図、第２図は第２の実施例を示す回路構成図、第
３図、第４図は従来技術の回路図である。
１……正電源ライン、２……接地ライン、３…
…ＮチヤネルＭＯＳ電界効果トランジスタ、４，
８，１３，１４，１５，１６……抵抗、５……Ｃ
ＭＯＳ ＮＡＮＤゲート、６……ソレノイド負荷
、７，１７……ＮＰＮトランジスタ、９……定電
圧ダイオード、１０……ダイオード、１１……Ｎ
チヤネルＭＯＳ電界効果トランジスタ、１２……
ＣＭＯＳインバータ、１８……ＰＮＰトランジス
タ。
FIG. 1 is a circuit diagram showing a first embodiment of the present invention, FIG. 2 is a circuit diagram showing a second embodiment, and FIGS. 3 and 4 are circuit diagrams of the prior art. 1...Positive power line, 2...Ground line, 3...
...N-channel MOS field effect transistor, 4,
8, 13, 14, 15, 16...Resistance, 5...C
MOS NAND gate, 6... Solenoid load, 7, 17... NPN transistor, 9... Constant voltage diode, 10... Diode, 11... N
Channel MOS field effect transistor, 12...
CMOS inverter, 18...PNP transistor.
Claims (1)
、ＭＯＳ電界効果トランジスタにあつてはソース
側（以下、ＭＯＳ電界効果トランジスタの電極を
括弧内に示す）に負荷を接続してなる半導体スイ
ツチ回路において、前記トランジスタのベース（
ゲート）を抵抗を介してデイジタル制御回路の出
力に接続し、ベース・エミツタ間（ゲート・ソー
ス間）には前記トランジスタと同極性の第２のト
ランジスタのコレクタ・エミツタ（ドレイン・ソ
ース）を接続し、該第２のトランジスタのベース
バイアス回路（ゲートバイアス回路）を前記負荷
の一端が接続されている電源に接続したことを特
徴とする半導体スイツチ回路。 In a semiconductor switch circuit in which a load is connected to the emitter side in the case of a bipolar transistor and the source side in the case of a MOS field effect transistor (hereinafter, the electrodes of the MOS field effect transistor are shown in parentheses), the base of the transistor is (
The gate) is connected to the output of the digital control circuit via a resistor, and the collector-emitter (drain-source) of a second transistor having the same polarity as the transistor is connected between the base and emitter (gate-source). , a semiconductor switch circuit characterized in that a base bias circuit (gate bias circuit) of the second transistor is connected to a power source to which one end of the load is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14096688U JPH0262835U (en) | 1988-10-28 | 1988-10-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14096688U JPH0262835U (en) | 1988-10-28 | 1988-10-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0262835U true JPH0262835U (en) | 1990-05-10 |
Family
ID=31405611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14096688U Pending JPH0262835U (en) | 1988-10-28 | 1988-10-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0262835U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011199401A (en) * | 2010-03-17 | 2011-10-06 | Furukawa Electric Co Ltd:The | Power supply device |
-
1988
- 1988-10-28 JP JP14096688U patent/JPH0262835U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011199401A (en) * | 2010-03-17 | 2011-10-06 | Furukawa Electric Co Ltd:The | Power supply device |