JPS6323829U - - Google Patents
Info
- Publication number
- JPS6323829U JPS6323829U JP11770586U JP11770586U JPS6323829U JP S6323829 U JPS6323829 U JP S6323829U JP 11770586 U JP11770586 U JP 11770586U JP 11770586 U JP11770586 U JP 11770586U JP S6323829 U JPS6323829 U JP S6323829U
- Authority
- JP
- Japan
- Prior art keywords
- power mosfet
- source
- resistor
- drive circuit
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003071 parasitic effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 1
Landscapes
- Electronic Switches (AREA)
Description
第１図は本考案パワーＭＯＳＦＥＴ駆動回路の
一実施例を示す回路図、第２図は従来のパワーＭ
ＯＳＦＥＴ駆動回路を示す回路図である。
１……直流電源、２……直流電源、３……Ｐチ
ヤネルＭＯＳＦＥＴ、４……ＮチヤネルＭＯＳＦ
ＥＴ、５……抵抗、６……第２のパワーＭＯＳＦ
ＥＴ、７……負荷、８……パワーＭＯＳＦＥＴ、
９……トランジスタ、１０……トランジスタ、１
１……制御回路、１２……パルストランス、１３
……抵抗、１４……抵抗、１５……過電流検出回
路。
Figure 1 is a circuit diagram showing an embodiment of the power MOSFET drive circuit of the present invention, and Figure 2 is a circuit diagram of a conventional power MOSFET drive circuit.
FIG. 2 is a circuit diagram showing an OSFET drive circuit. 1...DC power supply, 2...DC power supply, 3...P channel MOSFET, 4...N channel MOSF
ET, 5...Resistance, 6...Second power MOSF
ET, 7...Load, 8...Power MOSFET,
9...Transistor, 10...Transistor, 1
1...Control circuit, 12...Pulse transformer, 13
...Resistor, 14...Resistor, 15...Overcurrent detection circuit.
Claims (1)
ＰチヤンネルおよびＮチヤンネルＭＯＳＦＥＴの
接続点から抵抗を通してパワーＭＯＳＦＥＴのゲ
ートにバイアス電圧を与えるパワーＭＯＳＦＥＴ
駆動回路において、該パワーＭＯＳＦＥＴをオフ
させる時に順バイアスが印加されるようにゲート
とソースを前記抵抗の両端に接続するとともにド
レインを前記パワーＭＯＳＦＥＴのソースに接続
した第２のパワーＭＯＳＦＥＴを備えて成ること
を特徴とするパワーＭＯＳＦＥＴ駆動回路。 A power MOSFET that applies a bias voltage to the gate of the power MOSFET through a resistor from the connection point of the P-channel and N-channel MOSFETs that have a parasitic diode between the drain and source.
The drive circuit includes a second power MOSFET whose gate and source are connected to both ends of the resistor and whose drain is connected to the source of the power MOSFET so that a forward bias is applied when turning off the power MOSFET. A power MOSFET drive circuit characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11770586U JPS6323829U (en) | 1986-07-30 | 1986-07-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11770586U JPS6323829U (en) | 1986-07-30 | 1986-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6323829U true JPS6323829U (en) | 1988-02-17 |
Family
ID=31003466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11770586U Pending JPS6323829U (en) | 1986-07-30 | 1986-07-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6323829U (en) |
-
1986
- 1986-07-30 JP JP11770586U patent/JPS6323829U/ja active Pending