JPH024318U - - Google Patents

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Publication number
JPH024318U
JPH024318U JP8109088U JP8109088U JPH024318U JP H024318 U JPH024318 U JP H024318U JP 8109088 U JP8109088 U JP 8109088U JP 8109088 U JP8109088 U JP 8109088U JP H024318 U JPH024318 U JP H024318U
Authority
JP
Japan
Prior art keywords
circuit
energized
channel mosfet
power supply
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8109088U
Other languages
Japanese (ja)
Other versions
JPH0644186Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8109088U priority Critical patent/JPH0644186Y2/en
Publication of JPH024318U publication Critical patent/JPH024318U/ja
Application granted granted Critical
Publication of JPH0644186Y2 publication Critical patent/JPH0644186Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、この考案の実施例に係るMOSFE
T保護回路を示す回路図、第2図は、従来のCM
OS回路を示す構成図、第3図は、従来の電源回
路を示す回路図。 1……電源回路、6……PチヤネルMOSFE
T、6a……接続点、7,13……NチヤネルM
OSFET、9……ツエナーダイオード、14…
…NチヤネルMOSFET、15……ツエナーダ
イオード、15a……接続点、16……抵抗、B
……電源ラインの接点、D……ドレイン、G……
ゲート、R……抵抗、S……ソース、GND……
グラウンド、VZ,VZ……ツエナー電圧、
VB……電源電圧、VTH……閾値電圧、VH…
…接続点6aにおける電圧。
FIG. 1 shows a MOSFE according to an embodiment of this invention.
A circuit diagram showing the T protection circuit, Figure 2, is a conventional CM
FIG. 3 is a block diagram showing an OS circuit, and FIG. 3 is a circuit diagram showing a conventional power supply circuit. 1...Power supply circuit, 6...P channel MOSFE
T, 6a... Connection point, 7, 13... N channel M
OSFET, 9... Zener diode, 14...
...N-channel MOSFET, 15... Zener diode, 15a... Connection point, 16... Resistor, B
...Power line contact, D...Drain, G...
Gate, R...resistance, S...source, GND...
Ground, VZ 1 , VZ 2 ... Zener voltage,
VB...power supply voltage, VTH...threshold voltage, VH...
...Voltage at the connection point 6a.

Claims (1)

【実用新案登録請求の範囲】 常時通電している回路と入力信号よつて通電、
停電を切り換える回路を有するCMOS回路にお
いて、 常時通電している回路のPチヤネルMOSFE
Tのソース側と電源ラインとの間に高耐圧のNチ
ヤネルMOSFETを介装し、該NチヤネルMO
SFETのゲート側とグラウンドとの間に電源電
圧より高いツエナー電圧を有するツエナーダイオ
ードを接続し、前記NチヤネルMOSFETのゲ
ート側とドレイン側との間に抵抗を接続したこと
を特徴とするMOSFET保護回路。
[Scope of claim for utility model registration] Circuits that are constantly energized and energized by input signals;
In a CMOS circuit that has a circuit that switches during power outages, the P channel MOSFE of the circuit that is always energized
A high-voltage N-channel MOSFET is interposed between the source side of T and the power supply line, and the N-channel MOSFET
A MOSFET protection circuit characterized in that a Zener diode having a Zener voltage higher than the power supply voltage is connected between the gate side of the SFET and the ground, and a resistor is connected between the gate side and the drain side of the N-channel MOSFET. .
JP8109088U 1988-06-21 1988-06-21 MOSFET protection circuit Expired - Lifetime JPH0644186Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8109088U JPH0644186Y2 (en) 1988-06-21 1988-06-21 MOSFET protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8109088U JPH0644186Y2 (en) 1988-06-21 1988-06-21 MOSFET protection circuit

Publications (2)

Publication Number Publication Date
JPH024318U true JPH024318U (en) 1990-01-11
JPH0644186Y2 JPH0644186Y2 (en) 1994-11-14

Family

ID=31305890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8109088U Expired - Lifetime JPH0644186Y2 (en) 1988-06-21 1988-06-21 MOSFET protection circuit

Country Status (1)

Country Link
JP (1) JPH0644186Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102810539A (en) * 2011-06-03 2012-12-05 美国亚德诺半导体公司 Metal oxide semiconductor output circuits and methods of forming the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102810539A (en) * 2011-06-03 2012-12-05 美国亚德诺半导体公司 Metal oxide semiconductor output circuits and methods of forming the same
JP2012253326A (en) * 2011-06-03 2012-12-20 Analog Devices Inc Metal oxide semiconductor output circuits and methods of forming the same

Also Published As

Publication number Publication date
JPH0644186Y2 (en) 1994-11-14

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