JPH0348330U - - Google Patents

Info

Publication number
JPH0348330U
JPH0348330U JP10756789U JP10756789U JPH0348330U JP H0348330 U JPH0348330 U JP H0348330U JP 10756789 U JP10756789 U JP 10756789U JP 10756789 U JP10756789 U JP 10756789U JP H0348330 U JPH0348330 U JP H0348330U
Authority
JP
Japan
Prior art keywords
power supply
drain
source
connection protection
back gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10756789U
Other languages
Japanese (ja)
Other versions
JP2525450Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10756789U priority Critical patent/JP2525450Y2/en
Publication of JPH0348330U publication Critical patent/JPH0348330U/ja
Application granted granted Critical
Publication of JP2525450Y2 publication Critical patent/JP2525450Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案に係る逆接保護回路の実施例を
示す回路図、第２図と第３図はＮチヤンネルＭＯ
Ｓ型電界効果トランジスタと本考案に係るＮチヤ
ンネルＭＯＳ型電界効果トランジスタの各素子構
造を示す各側断面図、第４図と第５図と第６図は
従来の逆接保護回路の各具体例を示す各回路図で
ある。 １……回路、Ｒ……逆接保護用抵抗、Ｑ……電
界効果トランジスタ、ＶＤ……直流電源、Ｂ……
バツクゲート、Ｄ……ドレイン、Ｓ……ソース。 FIG. 1 is a circuit diagram showing an embodiment of the reverse connection protection circuit according to the present invention, and FIGS. 2 and 3 are N-channel MO
Side cross-sectional views showing the respective element structures of an S-type field effect transistor and an N-channel MOS field-effect transistor according to the present invention, and FIGS. 4, 5, and 6 show specific examples of conventional reverse polarity protection circuits. FIG. 1...Circuit, R...Reverse connection protection resistor, Q...Field effect transistor, VD...DC power supply, B...
Backgate, D...drain, S...source.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] バツクゲートとソース間に逆接保護用抵抗を挿
入したＮ又はＰチヤンネルＭＯＳ型電界効果トラ
ンジスタと、直流電源順接続時にはドレイン・ソ
ース間が導通すると共に、直流電源逆接続時には
上記抵抗を介してバツクゲート・ドレイン間が導
通するように上記トランジスタを接地又は電源端
子に接続した電気回路とを具備したことを特徴と
する逆接保護回路。 An N or P channel MOS field effect transistor has a reverse connection protection resistor inserted between the back gate and source, and when the DC power supply is connected forward, the drain and source are electrically connected, and when the DC power supply is reverse connected, the back gate and drain are connected through the above resistor. 1. A reverse connection protection circuit comprising: an electric circuit in which the transistor is connected to ground or a power supply terminal so as to be electrically conductive between the transistors.
JP10756789U 1989-09-12 1989-09-12 Reverse connection protection circuit Expired - Lifetime JP2525450Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10756789U JP2525450Y2 (en) 1989-09-12 1989-09-12 Reverse connection protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10756789U JP2525450Y2 (en) 1989-09-12 1989-09-12 Reverse connection protection circuit

Publications (2)

Publication Number Publication Date
JPH0348330U true JPH0348330U (en) 1991-05-09
JP2525450Y2 JP2525450Y2 (en) 1997-02-12

Family

ID=31656255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10756789U Expired - Lifetime JP2525450Y2 (en) 1989-09-12 1989-09-12 Reverse connection protection circuit

Country Status (1)

Country Link
JP (1) JP2525450Y2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0690520A (en) * 1992-09-09 1994-03-29 Toshiba Corp Malfunction preventing circuit and protection circuit
JPH11176948A (en) * 1997-12-08 1999-07-02 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit
JP2008282963A (en) * 2007-05-10 2008-11-20 Oki Electric Ind Co Ltd Semiconductor integrated circuit
JP2009165114A (en) * 2007-12-12 2009-07-23 Nec Electronics Corp Load driving device
JP2015031639A (en) * 2013-08-06 2015-02-16 日立オートモティブシステムズ株式会社 Sensor device
JPWO2017141811A1 (en) * 2016-02-18 2018-12-13 ローム株式会社 Protection circuit, operation method of protection circuit, and semiconductor integrated circuit device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0690520A (en) * 1992-09-09 1994-03-29 Toshiba Corp Malfunction preventing circuit and protection circuit
JPH11176948A (en) * 1997-12-08 1999-07-02 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit
JP2008282963A (en) * 2007-05-10 2008-11-20 Oki Electric Ind Co Ltd Semiconductor integrated circuit
JP2009165114A (en) * 2007-12-12 2009-07-23 Nec Electronics Corp Load driving device
US8605399B2 (en) 2007-12-12 2013-12-10 Renesas Electronics Corporation Load driving device
JP2015031639A (en) * 2013-08-06 2015-02-16 日立オートモティブシステムズ株式会社 Sensor device
JPWO2017141811A1 (en) * 2016-02-18 2018-12-13 ローム株式会社 Protection circuit, operation method of protection circuit, and semiconductor integrated circuit device

Also Published As

Publication number Publication date
JP2525450Y2 (en) 1997-02-12

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