JPS6178436U - - Google Patents

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Publication number
JPS6178436U
JPS6178436U JP16110584U JP16110584U JPS6178436U JP S6178436 U JPS6178436 U JP S6178436U JP 16110584 U JP16110584 U JP 16110584U JP 16110584 U JP16110584 U JP 16110584U JP S6178436 U JPS6178436 U JP S6178436U
Authority
JP
Japan
Prior art keywords
channel field
effect transistor
gate
transistor
drive circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16110584U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16110584U priority Critical patent/JPS6178436U/ja
Publication of JPS6178436U publication Critical patent/JPS6178436U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す接続図、第2
図は第1図のタイムチヤート、第3図は、従来の
ベース駆動回路の接続図、第4図は、第3図のタ
イムチヤート、第5図はMOSFETの等価回路とスイ
ツチング動作波形である。 6,9〜12…トランジスタ、5,8,13〜
16…抵抗、7…大容量トランジスタ。
Fig. 1 is a connection diagram showing one embodiment of the present invention;
The figures are a time chart of FIG. 1, FIG. 3 is a connection diagram of a conventional base drive circuit, FIG. 4 is a time chart of FIG. 3, and FIG. 5 is an equivalent circuit of a MOSFET and switching operation waveforms. 6, 9-12...transistor, 5, 8, 13-
16...Resistor, 7...Large capacity transistor.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 自己消弧形半導体子のゲート駆動回路において
Pチヤンネル及びNチヤンネルの電界効果トラン
ジスタで、コンプリメンタリ構成とし、Pチヤン
ネル電界効果トランジスタのゲート及びNチヤン
ネル電界効果トランジスタのゲートに、それぞれ
NPNトランジスタとPNPトランジスタで構成
したコンプリメンタリ回路を接続することを特徴
とするゲート駆動回路。
In a gate drive circuit of a self-extinguishing semiconductor device, a P-channel field-effect transistor and an N-channel field-effect transistor are used in a complementary configuration, and an NPN transistor and a PNP transistor are used at the gate of the P-channel field-effect transistor and the gate of the N-channel field-effect transistor, respectively. A gate drive circuit characterized by connecting configured complementary circuits.
JP16110584U 1984-10-26 1984-10-26 Pending JPS6178436U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16110584U JPS6178436U (en) 1984-10-26 1984-10-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16110584U JPS6178436U (en) 1984-10-26 1984-10-26

Publications (1)

Publication Number Publication Date
JPS6178436U true JPS6178436U (en) 1986-05-26

Family

ID=30719020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16110584U Pending JPS6178436U (en) 1984-10-26 1984-10-26

Country Status (1)

Country Link
JP (1) JPS6178436U (en)

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