JPS5978738U - Field-effect transistor gate drive circuit - Google Patents
Field-effect transistor gate drive circuitInfo
- Publication number
- JPS5978738U JPS5978738U JP17530682U JP17530682U JPS5978738U JP S5978738 U JPS5978738 U JP S5978738U JP 17530682 U JP17530682 U JP 17530682U JP 17530682 U JP17530682 U JP 17530682U JP S5978738 U JPS5978738 U JP S5978738U
- Authority
- JP
- Japan
- Prior art keywords
- effect transistor
- transistors
- drive circuit
- gate drive
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来例の回路図、第3図および第4図は本考案
の二つの実施例の回路図、第2図はそれらの回路の動作
波形図である。
1.2.11・・・直流電源、3. 4. 12. 1
3・・・パルス発生回路、5・・−PNP型トランジス
タ、6゜8.14.15・・・NPN型トランジスタ、
7゜16.16’・・・抵抗、9,20・・・Nチャン
ネル型MIS−FET、17・・・ダイオード、18・
・・リアクトル、19・・・コンデンサ。FIG. 1 is a circuit diagram of a conventional example, FIGS. 3 and 4 are circuit diagrams of two embodiments of the present invention, and FIG. 2 is an operating waveform diagram of those circuits. 1.2.11...DC power supply, 3. 4. 12. 1
3...Pulse generation circuit, 5...-PNP type transistor, 6°8.14.15...NPN type transistor,
7゜16.16'...Resistance, 9,20...N-channel type MIS-FET, 17...Diode, 18.
...Reactor, 19...Capacitor.
Claims (1)
び第2のトランジスタの直列接続回路とを共通に並列接
続し、前記第1および第2のトランジスタのベースをそ
れぞれ前記第1および第2のパルス発生回路の出力に接
続し、前記第1および第2のトランジスタの共通接続点
と被駆動電界効果トランジスタのゲート間にリアクトル
を前記被駆動電界効果上ランジスタのゲートとソース間
にコンデンサをそれぞれ挿入し、前記第2のトランジス
タと前記リアクトルと前記コンデンサとからなる閉ルー
プ内に抵抗若しくはダイオードを並列接続した抵抗を挿
入してなる回路を含むことを特徴とする電界効果トラン
ジスタのゲート駆動回路。A DC power supply, first and second pulse generation circuits, and a series connection circuit of first and second transistors are commonly connected in parallel, and the bases of the first and second transistors are connected to the bases of the first and second transistors, respectively. a reactor between the common connection point of the first and second transistors and the gate of the driven field effect transistor, and a capacitor between the gate and source of the driven field effect transistor, respectively. 1. A gate drive circuit for a field effect transistor, comprising a circuit including a resistor having a resistor or a diode connected in parallel in a closed loop consisting of the second transistor, the reactor, and the capacitor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17530682U JPS5978738U (en) | 1982-11-19 | 1982-11-19 | Field-effect transistor gate drive circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17530682U JPS5978738U (en) | 1982-11-19 | 1982-11-19 | Field-effect transistor gate drive circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5978738U true JPS5978738U (en) | 1984-05-28 |
Family
ID=30381430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17530682U Pending JPS5978738U (en) | 1982-11-19 | 1982-11-19 | Field-effect transistor gate drive circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5978738U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001221068A (en) * | 2000-02-04 | 2001-08-17 | Hitachi Ltd | Throttle valve controller |
-
1982
- 1982-11-19 JP JP17530682U patent/JPS5978738U/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001221068A (en) * | 2000-02-04 | 2001-08-17 | Hitachi Ltd | Throttle valve controller |
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