JPH043764B2 - - Google Patents
Info
- Publication number
- JPH043764B2 JPH043764B2 JP60279463A JP27946385A JPH043764B2 JP H043764 B2 JPH043764 B2 JP H043764B2 JP 60279463 A JP60279463 A JP 60279463A JP 27946385 A JP27946385 A JP 27946385A JP H043764 B2 JPH043764 B2 JP H043764B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- organic
- organic silicone
- silicone thin
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 26
- 229920001296 polysiloxane Polymers 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229960001730 nitrous oxide Drugs 0.000 claims description 8
- 238000006552 photochemical reaction Methods 0.000 claims description 8
- -1 silane compound Chemical class 0.000 claims description 8
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 239000012071 phase Substances 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 229910052753 mercury Inorganic materials 0.000 claims description 5
- 125000005843 halogen group Chemical group 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 125000000962 organic group Chemical group 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 3
- 239000003504 photosensitizing agent Substances 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- GNEPOXWQWFSSOU-UHFFFAOYSA-N dichloro-methyl-phenylsilane Chemical compound C[Si](Cl)(Cl)C1=CC=CC=C1 GNEPOXWQWFSSOU-UHFFFAOYSA-N 0.000 description 3
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 3
- VDCSGNNYCFPWFK-UHFFFAOYSA-N diphenylsilane Chemical compound C=1C=CC=CC=1[SiH2]C1=CC=CC=C1 VDCSGNNYCFPWFK-UHFFFAOYSA-N 0.000 description 3
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- BYLOHCRAPOSXLY-UHFFFAOYSA-N dichloro(diethyl)silane Chemical compound CC[Si](Cl)(Cl)CC BYLOHCRAPOSXLY-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PJMZOZSTBHYHFW-UHFFFAOYSA-N dibenzyl(dichloro)silane Chemical compound C=1C=CC=CC=1C[Si](Cl)(Cl)CC1=CC=CC=C1 PJMZOZSTBHYHFW-UHFFFAOYSA-N 0.000 description 1
- ZOSYJZBGCNUCSZ-UHFFFAOYSA-N dibenzylsilane Chemical compound C=1C=CC=CC=1C[SiH2]CC1=CC=CC=C1 ZOSYJZBGCNUCSZ-UHFFFAOYSA-N 0.000 description 1
- UFCXHBIETZKGHB-UHFFFAOYSA-N dichloro(diethoxy)silane Chemical compound CCO[Si](Cl)(Cl)OCC UFCXHBIETZKGHB-UHFFFAOYSA-N 0.000 description 1
- QEHKWLKYFXJVLL-UHFFFAOYSA-N dichloro(dimethoxy)silane Chemical compound CO[Si](Cl)(Cl)OC QEHKWLKYFXJVLL-UHFFFAOYSA-N 0.000 description 1
- OSXYHAQZDCICNX-UHFFFAOYSA-N dichloro(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](Cl)(Cl)C1=CC=CC=C1 OSXYHAQZDCICNX-UHFFFAOYSA-N 0.000 description 1
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- VIPCDVWYAADTGR-UHFFFAOYSA-N trimethyl(methylsilyl)silane Chemical compound C[SiH2][Si](C)(C)C VIPCDVWYAADTGR-UHFFFAOYSA-N 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Silicon Polymers (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60279463A JPS62138529A (ja) | 1985-12-10 | 1985-12-10 | 有機シリコ−ン薄膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60279463A JPS62138529A (ja) | 1985-12-10 | 1985-12-10 | 有機シリコ−ン薄膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62138529A JPS62138529A (ja) | 1987-06-22 |
| JPH043764B2 true JPH043764B2 (enrdf_load_html_response) | 1992-01-24 |
Family
ID=17611416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60279463A Granted JPS62138529A (ja) | 1985-12-10 | 1985-12-10 | 有機シリコ−ン薄膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62138529A (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2762013B2 (ja) * | 1993-04-28 | 1998-06-04 | 川崎重工業株式会社 | 紫外レーザーによる有機多層膜製造方法 |
| US6573196B1 (en) * | 2000-08-12 | 2003-06-03 | Applied Materials Inc. | Method of depositing organosilicate layers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59124729A (ja) * | 1983-01-05 | 1984-07-18 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁膜形成方法 |
| JPS6013065A (ja) * | 1983-07-01 | 1985-01-23 | Stanley Electric Co Ltd | 固体表面の撥水性処理方法 |
| JPS60190566A (ja) * | 1984-03-12 | 1985-09-28 | Semiconductor Energy Lab Co Ltd | 窒化珪素作製方法 |
-
1985
- 1985-12-10 JP JP60279463A patent/JPS62138529A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62138529A (ja) | 1987-06-22 |
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