JPH0437579B2 - - Google Patents

Info

Publication number
JPH0437579B2
JPH0437579B2 JP58006693A JP669383A JPH0437579B2 JP H0437579 B2 JPH0437579 B2 JP H0437579B2 JP 58006693 A JP58006693 A JP 58006693A JP 669383 A JP669383 A JP 669383A JP H0437579 B2 JPH0437579 B2 JP H0437579B2
Authority
JP
Japan
Prior art keywords
wafer
electrode
etching
spacer
annular body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58006693A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59132623A (ja
Inventor
Masashi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP669383A priority Critical patent/JPS59132623A/ja
Publication of JPS59132623A publication Critical patent/JPS59132623A/ja
Publication of JPH0437579B2 publication Critical patent/JPH0437579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP669383A 1983-01-20 1983-01-20 ドライエツチング用電極 Granted JPS59132623A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP669383A JPS59132623A (ja) 1983-01-20 1983-01-20 ドライエツチング用電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP669383A JPS59132623A (ja) 1983-01-20 1983-01-20 ドライエツチング用電極

Publications (2)

Publication Number Publication Date
JPS59132623A JPS59132623A (ja) 1984-07-30
JPH0437579B2 true JPH0437579B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-06-19

Family

ID=11645419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP669383A Granted JPS59132623A (ja) 1983-01-20 1983-01-20 ドライエツチング用電極

Country Status (1)

Country Link
JP (1) JPS59132623A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131453A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd ヱツチング方法
JPS6214430A (ja) * 1985-07-11 1987-01-23 Tokuda Seisakusho Ltd プラズマ処理装置
JPH07107899B2 (ja) * 1985-11-06 1995-11-15 日電アネルバ株式会社 ドライエツチング装置
JP2548164B2 (ja) * 1987-01-19 1996-10-30 松下電器産業株式会社 ドライエッチング方法
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6013984A (en) * 1998-06-10 2000-01-11 Lam Research Corporation Ion energy attenuation method by determining the required number of ion collisions
SG10201703432XA (en) * 2007-04-27 2017-06-29 Applied Materials Inc Annular baffle
JP2010278166A (ja) * 2009-05-27 2010-12-09 Tokyo Electron Ltd プラズマ処理用円環状部品、及びプラズマ処理装置
CN115087758A (zh) 2020-02-11 2022-09-20 朗姆研究公司 用于控制晶片晶边/边缘上的沉积的承载环设计
JP2023532276A (ja) * 2020-06-25 2023-07-27 ラム リサーチ コーポレーション プラズマインピーダンスが半径方向に変化するキャリアリング

Also Published As

Publication number Publication date
JPS59132623A (ja) 1984-07-30

Similar Documents

Publication Publication Date Title
US4776918A (en) Plasma processing apparatus
TWI460784B (zh) 在晶圓上提供一層電漿蝕刻的設備
JP4792185B2 (ja) エッチング速度の均一性を改良するプラズマ処理チャンバ
US4569745A (en) Sputtering apparatus
JP3266163B2 (ja) プラズマ処理装置
KR0140520B1 (ko) 플라즈마 에칭방법
JPH09505690A (ja) エッチングの均一性を向上するための誘導プラズマの増強構造
KR20000077025A (ko) 플라즈마처리장치 및 플라즈마처리방법
JPH0437579B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6337193B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6136589B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS5687670A (en) Dry etching apparatus
JPH0666301B2 (ja) プラズマエツチング方法
JPH0649936B2 (ja) バイアススパツタリング装置
JPH0758083A (ja) 半導体製造装置
JPH0691041B2 (ja) 反応性スパッタエッチング方法
JPS577129A (en) Treating method and device for sputtering
JP2574838B2 (ja) Alのスパッタエッチング装置
JPH07263427A (ja) プラズマエッチング方法
JPH05206073A (ja) 層の構造化方法
GB2049560A (en) Plasma etching
JPS57117240A (en) High-frequency sputtering etching device
JP2675000B2 (ja) プラズマ処理装置
JP3252167B2 (ja) ドライエッチング方法
US20010021550A1 (en) Plasma processing method and apparatus