JPH04368138A - Manufacture of resin-sealed semiconductor device - Google Patents
Manufacture of resin-sealed semiconductor deviceInfo
- Publication number
- JPH04368138A JPH04368138A JP14432691A JP14432691A JPH04368138A JP H04368138 A JPH04368138 A JP H04368138A JP 14432691 A JP14432691 A JP 14432691A JP 14432691 A JP14432691 A JP 14432691A JP H04368138 A JPH04368138 A JP H04368138A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- lead
- gaps
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011347 resin Substances 0.000 claims abstract description 44
- 229920005989 resin Polymers 0.000 claims abstract description 44
- 238000007789 sealing Methods 0.000 claims abstract description 23
- 238000005520 cutting process Methods 0.000 claims abstract description 12
- 238000000465 moulding Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 6
- 238000007747 plating Methods 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 3
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は樹脂封止型半導体装置の
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a resin-sealed semiconductor device.
【0002】0002
【従来の技術】従来、樹脂封止型半導体装置は、図4に
示す工程線図に従って組立てられていた。まず、ステッ
プS1で、図5に示すようなリードフレーム10の素子
搭載部1に半導体素子を搭載し、次にステップS2で素
子とリード2の先端とを金属細線で接続し、その後ステ
ップS4でリードフレーム10を樹脂封止し金型で型締
めし、型内に封止樹脂を注入することにより、素子搭載
部1に搭載された半導体素子,金属細線,内部リードな
どを樹脂封止して製造される。2. Description of the Related Art Conventionally, resin-sealed semiconductor devices have been assembled according to the process diagram shown in FIG. First, in step S1, a semiconductor element is mounted on the element mounting part 1 of the lead frame 10 as shown in FIG. By sealing the lead frame 10 with a resin and clamping it with a mold, and injecting a sealing resin into the mold, the semiconductor elements, thin metal wires, internal leads, etc. mounted on the element mounting section 1 are sealed with the resin. Manufactured.
【0003】この場合、樹脂封止金型の上型と下型に形
成された型の周辺部において、隣り合う複数のリードの
すきまに充填される樹脂は、型の周囲を所定の間隔で取
り囲んで、複数のリードを連結するタイバー3によって
せき止められるようにしているのが一般的である。In this case, in the periphery of the mold formed in the upper and lower molds of the resin sealing mold, the resin filled into the gaps between the adjacent leads surrounds the mold at a predetermined interval. Generally, the lead is blocked by a tie bar 3 that connects a plurality of leads.
【0004】その後、ステップS4aでタイバーを切断
除去し、ステップS5で外部リードに半田めっき等の外
装処理を行い、ステップS6で外部リードを所定の形状
に成形して、半導体装置は完成する。[0004] Thereafter, the tie bars are cut and removed in step S4a, the external leads are subjected to exterior treatment such as solder plating in step S5, and the external leads are formed into a predetermined shape in step S6, thereby completing the semiconductor device.
【0005】[0005]
【発明が解決しようとする課題】上述した従来の製造方
法では、樹脂封止後に複数のリードを連結しているタイ
バー3を切断除去しなければならない。このタイバー3
は通常、金型により切断除去されているが、半導体装置
の形状が異なるごとに、専用の金型を製作しなければな
らず、多大の費用がかかるという問題がある。In the conventional manufacturing method described above, the tie bars 3 connecting the plurality of leads must be cut and removed after resin sealing. This tie bar 3
is usually cut and removed using a mold, but a dedicated mold must be manufactured for each different shape of the semiconductor device, which poses a problem in that it costs a lot of money.
【0006】また、外部リードのピッチが小さくなるに
つれて、金型の製造は難しくなり、種々の問題が生じて
きた。例えば、外部リード2のピッチが0.4mmで、
その幅が0.2mmの場合には、切断刃の先端の厚さを
最大でも0.4−0.2=0.2mmにしかならない。
このように細い切断刃はかすづまり等の負荷により刃先
が容易に破損してしまうため、保守に手間がかかるとい
う問題がある。Furthermore, as the pitch of the external leads has become smaller, it has become more difficult to manufacture molds, and various problems have arisen. For example, if the pitch of external leads 2 is 0.4 mm,
If the width is 0.2 mm, the thickness at the tip of the cutting blade is only 0.4-0.2=0.2 mm at maximum. Since the cutting edge of such a thin cutting blade is easily damaged by loads such as dust clogging, there is a problem in that maintenance is time-consuming.
【0007】また、金型によりタイバーを切断除去する
ときのリードフレーム10の位置合せは、通常リードフ
レームに設けられている位置決め穴に、金型に設けられ
ている位置決めピンを挿入することによってなされるが
、リードフレームおよび金型の製作時の誤差により多少
の位置ずれを生じる。外部リードピッチが小さい半導体
装置の場合には、たとえわずかの位置ずれであっても、
切断パンチがリードにくいこんでしまい、歩留りを低下
させてしまうという問題がある。[0007] Furthermore, when the tie bar is cut and removed using a mold, the positioning of the lead frame 10 is usually done by inserting a positioning pin provided in the mold into a positioning hole provided in the lead frame. However, some positional deviation occurs due to errors in the manufacturing of the lead frame and mold. In the case of semiconductor devices with a small external lead pitch, even a slight misalignment
There is a problem that the cutting punch gets stuck in the lead, reducing the yield.
【0008】本発明の目的は、これらの問題を解決し、
タイバーの切断除去を不要とし、安定したリード形状が
得られると共に、品質向上も図られる樹脂封止型半導体
装置の製造方法を提供することにある。The purpose of the present invention is to solve these problems and
It is an object of the present invention to provide a method for manufacturing a resin-sealed semiconductor device, which eliminates the need to cut and remove tie bars, provides a stable lead shape, and improves quality.
【0009】[0009]
【課題を解決するための手段】本発明の樹脂封止型半導
体装置の製造方法の構成は、タイバーを設けないリード
フレームの隣り合う複数のリードのすきまのうち外部リ
ードの根元に位置する部分に樹脂などの絶縁物を形成す
る工程と、前記リードフレームを樹脂封止金型で型締め
し樹脂封止する工程と、前記リードフレームを切断して
前記外部リードを所定形状に成形する工程とを有するこ
とを特徴とする。[Means for Solving the Problems] The structure of the method for manufacturing a resin-sealed semiconductor device of the present invention is such that a tie bar is not provided in a portion located at the root of an external lead in a gap between a plurality of adjacent leads of a lead frame in which a tie bar is not provided. A step of forming an insulator such as a resin, a step of clamping the lead frame with a resin sealing mold and sealing it with resin, and a step of cutting the lead frame and molding the external lead into a predetermined shape. It is characterized by having.
【0010】0010
【実施例】図1は本発明の一実施例を説明するリードフ
レームの部分平面図、図2は本実施例の工程線図である
。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a partial plan view of a lead frame illustrating an embodiment of the present invention, and FIG. 2 is a process diagram of this embodiment.
【0011】本実施例においては、図2に示す工程線図
に従い、まずステップS1でリードフレーム10の素子
搭載部1に半導体素子を搭載し、次にステップS2で素
子とリードの先端とを金属細線で接続した後に、ステッ
プS3で隣り合う複数のリード2のすきまに樹脂4を形
成し(図1(b))、ステップS4で樹脂封止金型で型
締めし、型内に封止樹脂を注入することにより樹脂封止
し、その後ステップS5で外部リードに半田めっき等の
外装処理を行い、ステップS6で外部リードを所定の形
状に成形することにより、半導体装置を製造する。In this embodiment, according to the process diagram shown in FIG. 2, first, in step S1, a semiconductor device is mounted on the device mounting portion 1 of the lead frame 10, and then, in step S2, the device and the tip of the lead are bonded with metal. After connecting with thin wires, resin 4 is formed in the gaps between the adjacent leads 2 in step S3 (FIG. 1(b)), and the mold is clamped with a resin sealing mold in step S4, and the sealing resin is filled in the mold. The semiconductor device is manufactured by resin-sealing the semiconductor device by injecting it with a resin, then performing an exterior treatment such as solder plating on the external leads in step S5, and molding the external leads into a predetermined shape in step S6.
【0012】本実施例では、図1(a)に示すタイバー
のないリードフレーム10を用いる。隣り合う複数のリ
ードのすきまに樹脂を形成するには、図1(a)のリー
ドフレーム10の隣り合う複数のリード2のすきまに液
状の熱硬化性樹脂を滴下し、熱硬化させればよい。形成
する樹脂の大きさと一は、図1(b)の通りである。In this embodiment, a lead frame 10 without tie bars shown in FIG. 1(a) is used. In order to form a resin in the gaps between a plurality of adjacent leads, liquid thermosetting resin may be dropped into the gaps between a plurality of adjacent leads 2 of the lead frame 10 in FIG. 1(a) and then thermoset. . The size of the resin to be formed is as shown in FIG. 1(b).
【0013】すなわち、図1(b)では、リード2の幅
が0.2mm,隣り合う複数のリード2のすきまが0.
2mmであり、樹脂4は樹脂封止される部分の外縁をま
たぐように形成されており、この樹脂4の幅は0.2m
m,長さは約0.5mmあれば十分である。That is, in FIG. 1(b), the width of the lead 2 is 0.2 mm, and the gap between the adjacent leads 2 is 0.2 mm.
The resin 4 is formed so as to straddle the outer edge of the part to be sealed with resin, and the width of this resin 4 is 0.2 m.
A length of approximately 0.5 mm is sufficient.
【0014】次にこのリードフレームを樹脂封止金型で
型締めし、型内に封止樹脂を注入することにより、樹脂
封止するのであるが、隣り合う複数のリード2のすきま
にすべてに形成されている樹脂4によって、封止樹脂は
せき止められる。Next, this lead frame is clamped with a resin sealing mold, and a sealing resin is injected into the mold to perform resin sealing. The sealing resin is blocked by the formed resin 4.
【0015】従来技術では、図4に示すように、樹脂封
止後、タイバーを切断除去する必要があったが、本実施
例では、図2に示すように、樹脂封止後にタイバーを切
断除去する必要はなく、そのまま外部リードの外装処理
を行うことができる。In the conventional technology, as shown in FIG. 4, it was necessary to cut and remove the tie bars after resin sealing, but in this embodiment, as shown in FIG. 2, the tie bars were cut and removed after resin sealing. There is no need to do this, and the external lead can be packaged as is.
【0016】図3は本発明の第2実施例を説明するリー
ドフレームの部分平面図である。本実施例では、第1の
実施例と同様、タイバーのないリードフレーム10を用
い、図2に示す工程線図に従って、半導体装置を製造す
るが、図3(a)に示すようにリード2に突起6が設け
られているリードフレーム10を使用している。FIG. 3 is a partial plan view of a lead frame illustrating a second embodiment of the present invention. In this example, a semiconductor device is manufactured using a lead frame 10 without tie bars in accordance with the process diagram shown in FIG. 2, as in the first example. A lead frame 10 provided with protrusions 6 is used.
【0017】このようなリードフレーム10を用いると
、図3(b)に示すように、隣り合う複数のリード2の
すきまに形成された樹脂4が突起6によりしっかりと固
定されるので、樹脂封止時に封止樹脂の圧力により、樹
脂4が移動することがなく、封止樹脂を安定して行うこ
とができるという利点がある。When such a lead frame 10 is used, the resin 4 formed in the gaps between the adjacent leads 2 is firmly fixed by the projections 6, as shown in FIG. There is an advantage that the resin 4 does not move due to the pressure of the sealing resin during sealing, and the sealing resin can be stably applied.
【0018】[0018]
【発明の効果】以上説明したように本発明は、タイバー
のないリードフレームを用い、リードフレームを樹脂封
止する前に、タイバーのないリードフレームの隣り合う
複数のリードのすきまに樹脂を設けることにより、従来
半導体装置の形状が異なるごとに製作する必要があった
高価なタイバー切断除去用プレス金型を不要にすること
ができるという効果がある。また、従来では、リード間
ピッチが小さくなるにつれて、タイバー切断ずれによる
不良が増加する傾向にあったが、本発明では、タイバー
切断ずれによる不良を完全になくすことができ、安定し
たリード形状を得ることができ、また、タイバー切断除
去時にプレスにより生ずる衝撃が全くなくなり、半導体
装置の品質向上が図られるという効果がある。[Effects of the Invention] As explained above, the present invention uses a lead frame without tie bars, and before sealing the lead frame with resin, provides resin in the gaps between a plurality of adjacent leads of the lead frame without tie bars. This has the effect of eliminating the need for an expensive press mold for cutting and removing tie bars, which conventionally had to be manufactured for each different shape of a semiconductor device. In addition, conventionally, as the pitch between leads became smaller, defects due to tie bar cutting misalignment tended to increase, but with the present invention, defects due to tie bar cutting misalignment can be completely eliminated, and a stable lead shape can be obtained. Moreover, there is an effect that the impact caused by pressing when cutting and removing the tie bars is completely eliminated, and the quality of the semiconductor device can be improved.
【図1】本発明の実施例を説明するリードフレーム部分
の部分平面図。FIG. 1 is a partial plan view of a lead frame portion explaining an embodiment of the present invention.
【図2】図1の実施例の工程線図。FIG. 2 is a process diagram of the embodiment of FIG.
【図3】本発明の第2の実施例を説明するリードフレー
ムの部分平面図。FIG. 3 is a partial plan view of a lead frame illustrating a second embodiment of the present invention.
【図4】従来の半導体製造方法を説明する工程線図。FIG. 4 is a process diagram illustrating a conventional semiconductor manufacturing method.
【図5】図4を説明するためのリードフレームの部分平
面図。FIG. 5 is a partial plan view of the lead frame for explaining FIG. 4;
1 素子搭載部 2 リード 3 タイバー 4 樹脂 5 樹脂封止される部分の外縁 6 突起 10 リードフレーム 1 Element mounting part 2 Lead 3 Tie bar 4 Resin 5 Outer edge of the part to be sealed with resin 6.Protrusion 10 Lead frame
Claims (1)
隣り合う複数のリードのすきまのうち外部リードの根元
に位置する部分に樹脂などの絶縁物を形成する工程と、
前記リードフレームを樹脂封止金型で型締めし樹脂封止
する工程と、前記リードフレームを切断して前記外部リ
ードを所定形状に成形する工程とを有することを特徴と
する樹脂封止型半導体装置の製造方法。1. A step of forming an insulating material such as resin in a portion located at the root of an external lead among the gaps between a plurality of adjacent leads of a lead frame without a tie bar;
A resin-sealed semiconductor comprising the steps of clamping the lead frame with a resin-sealing mold and sealing it with a resin, and cutting the lead frame and molding the external leads into a predetermined shape. Method of manufacturing the device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14432691A JP2979724B2 (en) | 1991-06-17 | 1991-06-17 | Resin-sealed semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14432691A JP2979724B2 (en) | 1991-06-17 | 1991-06-17 | Resin-sealed semiconductor device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04368138A true JPH04368138A (en) | 1992-12-21 |
JP2979724B2 JP2979724B2 (en) | 1999-11-15 |
Family
ID=15359507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14432691A Expired - Lifetime JP2979724B2 (en) | 1991-06-17 | 1991-06-17 | Resin-sealed semiconductor device and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2979724B2 (en) |
-
1991
- 1991-06-17 JP JP14432691A patent/JP2979724B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2979724B2 (en) | 1999-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990817 |