JPH043661B2 - - Google Patents

Info

Publication number
JPH043661B2
JPH043661B2 JP57113177A JP11317782A JPH043661B2 JP H043661 B2 JPH043661 B2 JP H043661B2 JP 57113177 A JP57113177 A JP 57113177A JP 11317782 A JP11317782 A JP 11317782A JP H043661 B2 JPH043661 B2 JP H043661B2
Authority
JP
Japan
Prior art keywords
silicon
fine powder
wafer
substrate
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57113177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS594117A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57113177A priority Critical patent/JPS594117A/ja
Publication of JPS594117A publication Critical patent/JPS594117A/ja
Publication of JPH043661B2 publication Critical patent/JPH043661B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments

Landscapes

  • Formation Of Insulating Films (AREA)
JP57113177A 1982-06-30 1982-06-30 半導体装置の製造方法 Granted JPS594117A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57113177A JPS594117A (ja) 1982-06-30 1982-06-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57113177A JPS594117A (ja) 1982-06-30 1982-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS594117A JPS594117A (ja) 1984-01-10
JPH043661B2 true JPH043661B2 (enExample) 1992-01-23

Family

ID=14605500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57113177A Granted JPS594117A (ja) 1982-06-30 1982-06-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS594117A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2505273B2 (ja) * 1989-02-21 1996-06-05 信越半導体株式会社 シリコンウエ―ハのドナ―キラ―熱処理方法
JP2571972B2 (ja) * 1990-02-08 1997-01-16 三菱マテリアル株式会社 シリコンウエーハの製造方法

Also Published As

Publication number Publication date
JPS594117A (ja) 1984-01-10

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