JPH0434316B2 - - Google Patents
Info
- Publication number
- JPH0434316B2 JPH0434316B2 JP16654083A JP16654083A JPH0434316B2 JP H0434316 B2 JPH0434316 B2 JP H0434316B2 JP 16654083 A JP16654083 A JP 16654083A JP 16654083 A JP16654083 A JP 16654083A JP H0434316 B2 JPH0434316 B2 JP H0434316B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- current blocking
- active layer
- conductivity type
- blocking layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000903 blocking effect Effects 0.000 claims description 19
- 238000005253 cladding Methods 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000010355 oscillation Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16654083A JPS6058689A (ja) | 1983-09-12 | 1983-09-12 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16654083A JPS6058689A (ja) | 1983-09-12 | 1983-09-12 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6058689A JPS6058689A (ja) | 1985-04-04 |
| JPH0434316B2 true JPH0434316B2 (enrdf_load_stackoverflow) | 1992-06-05 |
Family
ID=15833170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16654083A Granted JPS6058689A (ja) | 1983-09-12 | 1983-09-12 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6058689A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0302732B1 (en) * | 1987-08-04 | 1993-10-13 | Sharp Kabushiki Kaisha | A semiconductor laser device |
-
1983
- 1983-09-12 JP JP16654083A patent/JPS6058689A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6058689A (ja) | 1985-04-04 |
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