JPH04341555A - 蒸着により選択的に被覆された構造体の製造方法 - Google Patents

蒸着により選択的に被覆された構造体の製造方法

Info

Publication number
JPH04341555A
JPH04341555A JP3320166A JP32016691A JPH04341555A JP H04341555 A JPH04341555 A JP H04341555A JP 3320166 A JP3320166 A JP 3320166A JP 32016691 A JP32016691 A JP 32016691A JP H04341555 A JPH04341555 A JP H04341555A
Authority
JP
Japan
Prior art keywords
substrate
metal
paraffin
electromagnetic radiation
reduced pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3320166A
Other languages
English (en)
Japanese (ja)
Inventor
Juergen Petermann
ユルゲン、ペテルマン
Klaus Jandt
クラウス、イャント
Thomas Hoffmann
トーマス、ホフマン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Publication of JPH04341555A publication Critical patent/JPH04341555A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP3320166A 1990-12-12 1991-12-04 蒸着により選択的に被覆された構造体の製造方法 Withdrawn JPH04341555A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4039699.1 1990-12-12
DE4039699A DE4039699A1 (de) 1990-12-12 1990-12-12 Verfahren zur herstellung selektiv bedampfter strukturen

Publications (1)

Publication Number Publication Date
JPH04341555A true JPH04341555A (ja) 1992-11-27

Family

ID=6420164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3320166A Withdrawn JPH04341555A (ja) 1990-12-12 1991-12-04 蒸着により選択的に被覆された構造体の製造方法

Country Status (3)

Country Link
EP (1) EP0490229A2 (enExample)
JP (1) JPH04341555A (enExample)
DE (1) DE4039699A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148302A (ja) * 1995-11-29 1997-06-06 Agency Of Ind Science & Technol 微細加工方法
WO2006093193A1 (ja) * 2005-03-02 2006-09-08 Mitsubishi Chemical Corporation 金属パターン及び有機電子デバイスとその製造方法
JP2007188854A (ja) * 2005-03-02 2007-07-26 Osaka Kyoiku Univ 金属パターン及び有機電子デバイスとその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020126553B3 (de) * 2020-10-09 2021-09-02 Forschungsverbund Berlin E.V. Verfahren zur Mikrostrukturierung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4348473A (en) * 1981-03-04 1982-09-07 Xerox Corporation Dry process for the production of microelectronic devices
DE3424187A1 (de) * 1984-06-30 1986-01-09 Basf Ag, 6700 Ludwigshafen Verfahren zur herstellung eines resistmusters
EP0345400A1 (en) * 1988-06-08 1989-12-13 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Selective CVD for maufacturing semiconductor devices
NL8801632A (nl) * 1988-06-27 1990-01-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij tijdens depositie van een metaal een metaalsilicide wordt gevormd.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148302A (ja) * 1995-11-29 1997-06-06 Agency Of Ind Science & Technol 微細加工方法
WO2006093193A1 (ja) * 2005-03-02 2006-09-08 Mitsubishi Chemical Corporation 金属パターン及び有機電子デバイスとその製造方法
JP2007188854A (ja) * 2005-03-02 2007-07-26 Osaka Kyoiku Univ 金属パターン及び有機電子デバイスとその製造方法

Also Published As

Publication number Publication date
EP0490229A2 (de) 1992-06-17
DE4039699A1 (de) 1992-06-17
EP0490229A3 (enExample) 1994-01-26

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Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19990311