DE4039699A1 - Verfahren zur herstellung selektiv bedampfter strukturen - Google Patents

Verfahren zur herstellung selektiv bedampfter strukturen

Info

Publication number
DE4039699A1
DE4039699A1 DE4039699A DE4039699A DE4039699A1 DE 4039699 A1 DE4039699 A1 DE 4039699A1 DE 4039699 A DE4039699 A DE 4039699A DE 4039699 A DE4039699 A DE 4039699A DE 4039699 A1 DE4039699 A1 DE 4039699A1
Authority
DE
Germany
Prior art keywords
substrates
substrate
metals
paraffin
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE4039699A
Other languages
German (de)
English (en)
Inventor
Juergen Prof Dr Petermann
Klaus Jandt
Thomas Hoffmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF SE
Original Assignee
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF SE filed Critical BASF SE
Priority to DE4039699A priority Critical patent/DE4039699A1/de
Priority to EP91120735A priority patent/EP0490229A2/de
Priority to JP3320166A priority patent/JPH04341555A/ja
Publication of DE4039699A1 publication Critical patent/DE4039699A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE4039699A 1990-12-12 1990-12-12 Verfahren zur herstellung selektiv bedampfter strukturen Withdrawn DE4039699A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE4039699A DE4039699A1 (de) 1990-12-12 1990-12-12 Verfahren zur herstellung selektiv bedampfter strukturen
EP91120735A EP0490229A2 (de) 1990-12-12 1991-12-03 Verfahren zur Herstellung selektiv bedampfter Strukturen
JP3320166A JPH04341555A (ja) 1990-12-12 1991-12-04 蒸着により選択的に被覆された構造体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4039699A DE4039699A1 (de) 1990-12-12 1990-12-12 Verfahren zur herstellung selektiv bedampfter strukturen

Publications (1)

Publication Number Publication Date
DE4039699A1 true DE4039699A1 (de) 1992-06-17

Family

ID=6420164

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4039699A Withdrawn DE4039699A1 (de) 1990-12-12 1990-12-12 Verfahren zur herstellung selektiv bedampfter strukturen

Country Status (3)

Country Link
EP (1) EP0490229A2 (enExample)
JP (1) JPH04341555A (enExample)
DE (1) DE4039699A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2884054B2 (ja) * 1995-11-29 1999-04-19 工業技術院長 微細加工方法
JP5233074B2 (ja) * 2005-03-02 2013-07-10 三菱レイヨン株式会社 金属パターン及び有機電子デバイスとその製造方法
WO2006093193A1 (ja) * 2005-03-02 2006-09-08 Mitsubishi Chemical Corporation 金属パターン及び有機電子デバイスとその製造方法
DE102020126553B3 (de) * 2020-10-09 2021-09-02 Forschungsverbund Berlin E.V. Verfahren zur Mikrostrukturierung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4348473A (en) * 1981-03-04 1982-09-07 Xerox Corporation Dry process for the production of microelectronic devices
DE3424187A1 (de) * 1984-06-30 1986-01-09 Basf Ag, 6700 Ludwigshafen Verfahren zur herstellung eines resistmusters
EP0345400A1 (en) * 1988-06-08 1989-12-13 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Selective CVD for maufacturing semiconductor devices
NL8801632A (nl) * 1988-06-27 1990-01-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij tijdens depositie van een metaal een metaalsilicide wordt gevormd.

Also Published As

Publication number Publication date
EP0490229A2 (de) 1992-06-17
JPH04341555A (ja) 1992-11-27
EP0490229A3 (enExample) 1994-01-26

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Legal Events

Date Code Title Description
8130 Withdrawal