JPH0432551B2 - - Google Patents

Info

Publication number
JPH0432551B2
JPH0432551B2 JP57038768A JP3876882A JPH0432551B2 JP H0432551 B2 JPH0432551 B2 JP H0432551B2 JP 57038768 A JP57038768 A JP 57038768A JP 3876882 A JP3876882 A JP 3876882A JP H0432551 B2 JPH0432551 B2 JP H0432551B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
layer
reaction chamber
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57038768A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58155773A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57038768A priority Critical patent/JPS58155773A/ja
Publication of JPS58155773A publication Critical patent/JPS58155773A/ja
Publication of JPH0432551B2 publication Critical patent/JPH0432551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57038768A 1982-03-11 1982-03-11 半導体装置作製方法 Granted JPS58155773A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57038768A JPS58155773A (ja) 1982-03-11 1982-03-11 半導体装置作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57038768A JPS58155773A (ja) 1982-03-11 1982-03-11 半導体装置作製方法

Publications (2)

Publication Number Publication Date
JPS58155773A JPS58155773A (ja) 1983-09-16
JPH0432551B2 true JPH0432551B2 (enrdf_load_stackoverflow) 1992-05-29

Family

ID=12534466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57038768A Granted JPS58155773A (ja) 1982-03-11 1982-03-11 半導体装置作製方法

Country Status (1)

Country Link
JP (1) JPS58155773A (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391893A (en) * 1985-05-07 1995-02-21 Semicoductor Energy Laboratory Co., Ltd. Nonsingle crystal semiconductor and a semiconductor device using such semiconductor
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JP2784820B2 (ja) * 1989-10-17 1998-08-06 キヤノン株式会社 光起電力素子
JP2784821B2 (ja) * 1989-10-17 1998-08-06 キヤノン株式会社 光起電力素子
JP2784819B2 (ja) * 1989-10-17 1998-08-06 キヤノン株式会社 光起電力素子
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2814161B2 (ja) 1992-04-28 1998-10-22 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置およびその駆動方法
JP5010468B2 (ja) * 2005-03-24 2012-08-29 京セラ株式会社 光電変換素子とその製造方法、及びこれを用いた光電変換モジュール

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125681A (en) * 1979-03-22 1980-09-27 Sanyo Electric Co Ltd Manufacture of photovoltaic device

Also Published As

Publication number Publication date
JPS58155773A (ja) 1983-09-16

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