JPH0430740B2 - - Google Patents
Info
- Publication number
- JPH0430740B2 JPH0430740B2 JP11584783A JP11584783A JPH0430740B2 JP H0430740 B2 JPH0430740 B2 JP H0430740B2 JP 11584783 A JP11584783 A JP 11584783A JP 11584783 A JP11584783 A JP 11584783A JP H0430740 B2 JPH0430740 B2 JP H0430740B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pattern
- photoresist
- approximately
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 239000012044 organic layer Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000011368 organic material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58115847A JPS609124A (ja) | 1983-06-29 | 1983-06-29 | パタ−ン形成方法 |
| KR1019840003588A KR890003903B1 (ko) | 1983-06-29 | 1984-06-25 | 패턴 형성 방법 |
| US06/625,240 US4563241A (en) | 1983-06-29 | 1984-06-27 | Method of forming patterns |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58115847A JPS609124A (ja) | 1983-06-29 | 1983-06-29 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS609124A JPS609124A (ja) | 1985-01-18 |
| JPH0430740B2 true JPH0430740B2 (cs) | 1992-05-22 |
Family
ID=14672604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58115847A Granted JPS609124A (ja) | 1983-06-29 | 1983-06-29 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS609124A (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1255142A (en) * | 1985-03-11 | 1989-06-06 | Edward C. Fredericks | Method and composition of matter for improving conductor resolution in microelectronic circuits |
| CN100474491C (zh) * | 1995-06-12 | 2009-04-01 | 东丽株式会社 | 等离子体显示器 |
-
1983
- 1983-06-29 JP JP58115847A patent/JPS609124A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS609124A (ja) | 1985-01-18 |
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