JPH0430736B2 - - Google Patents
Info
- Publication number
- JPH0430736B2 JPH0430736B2 JP58225357A JP22535783A JPH0430736B2 JP H0430736 B2 JPH0430736 B2 JP H0430736B2 JP 58225357 A JP58225357 A JP 58225357A JP 22535783 A JP22535783 A JP 22535783A JP H0430736 B2 JPH0430736 B2 JP H0430736B2
- Authority
- JP
- Japan
- Prior art keywords
- scattered light
- intensity
- pattern
- wafer pattern
- detection signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 claims description 53
- 238000005286 illumination Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000003384 imaging method Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58225357A JPS60119722A (ja) | 1983-12-01 | 1983-12-01 | 半導体露光装置用ウエハパタ−ン検出方法及びその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58225357A JPS60119722A (ja) | 1983-12-01 | 1983-12-01 | 半導体露光装置用ウエハパタ−ン検出方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60119722A JPS60119722A (ja) | 1985-06-27 |
| JPH0430736B2 true JPH0430736B2 (enrdf_load_stackoverflow) | 1992-05-22 |
Family
ID=16828071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58225357A Granted JPS60119722A (ja) | 1983-12-01 | 1983-12-01 | 半導体露光装置用ウエハパタ−ン検出方法及びその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60119722A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62190724A (ja) * | 1986-02-17 | 1987-08-20 | Tokyo Electron Ltd | 位置合せ方法 |
| JPS6362251A (ja) * | 1986-09-02 | 1988-03-18 | Nikon Corp | アライメント装置 |
| JP2003324057A (ja) * | 2002-05-01 | 2003-11-14 | Sony Corp | アライメント装置およびアライメント方法 |
-
1983
- 1983-12-01 JP JP58225357A patent/JPS60119722A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60119722A (ja) | 1985-06-27 |
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