JPS60119722A - 半導体露光装置用ウエハパタ−ン検出方法及びその装置 - Google Patents

半導体露光装置用ウエハパタ−ン検出方法及びその装置

Info

Publication number
JPS60119722A
JPS60119722A JP58225357A JP22535783A JPS60119722A JP S60119722 A JPS60119722 A JP S60119722A JP 58225357 A JP58225357 A JP 58225357A JP 22535783 A JP22535783 A JP 22535783A JP S60119722 A JPS60119722 A JP S60119722A
Authority
JP
Japan
Prior art keywords
scattered light
wafer
intensity
turn
detection signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58225357A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0430736B2 (enrdf_load_stackoverflow
Inventor
Toshihiko Nakada
中田 敏彦
Yoshisada Oshida
良忠 押田
Mitsuyoshi Koizumi
小泉 光義
Masataka Shiba
正孝 芝
Yukio Uto
幸雄 宇都
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58225357A priority Critical patent/JPS60119722A/ja
Publication of JPS60119722A publication Critical patent/JPS60119722A/ja
Publication of JPH0430736B2 publication Critical patent/JPH0430736B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58225357A 1983-12-01 1983-12-01 半導体露光装置用ウエハパタ−ン検出方法及びその装置 Granted JPS60119722A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58225357A JPS60119722A (ja) 1983-12-01 1983-12-01 半導体露光装置用ウエハパタ−ン検出方法及びその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58225357A JPS60119722A (ja) 1983-12-01 1983-12-01 半導体露光装置用ウエハパタ−ン検出方法及びその装置

Publications (2)

Publication Number Publication Date
JPS60119722A true JPS60119722A (ja) 1985-06-27
JPH0430736B2 JPH0430736B2 (enrdf_load_stackoverflow) 1992-05-22

Family

ID=16828071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58225357A Granted JPS60119722A (ja) 1983-12-01 1983-12-01 半導体露光装置用ウエハパタ−ン検出方法及びその装置

Country Status (1)

Country Link
JP (1) JPS60119722A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190724A (ja) * 1986-02-17 1987-08-20 Tokyo Electron Ltd 位置合せ方法
JPS6362251A (ja) * 1986-09-02 1988-03-18 Nikon Corp アライメント装置
WO2003094212A1 (fr) * 2002-05-01 2003-11-13 Sony Corporation Systeme d'alignement, procede d'alignement et procede de production pour dispositif semi-conducteur

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190724A (ja) * 1986-02-17 1987-08-20 Tokyo Electron Ltd 位置合せ方法
JPS6362251A (ja) * 1986-09-02 1988-03-18 Nikon Corp アライメント装置
WO2003094212A1 (fr) * 2002-05-01 2003-11-13 Sony Corporation Systeme d'alignement, procede d'alignement et procede de production pour dispositif semi-conducteur

Also Published As

Publication number Publication date
JPH0430736B2 (enrdf_load_stackoverflow) 1992-05-22

Similar Documents

Publication Publication Date Title
US5235400A (en) Method of and apparatus for detecting defect on photomask
ATE414270T1 (de) Optische inspektion von testoberflächen
US20080142681A1 (en) Focus control method
JP2634620B2 (ja) 投影式露光方法およびその装置
KR0186068B1 (ko) 리소그라피 장치의 위치 정렬 시스템
US4667109A (en) Alignment device
JPS60119722A (ja) 半導体露光装置用ウエハパタ−ン検出方法及びその装置
JP3053097B2 (ja) ホトマスクの欠陥検出方法及び装置
JPS61260211A (ja) 自動異物検出方法及びその装置
JP2650396B2 (ja) 位置検出装置及び位置検出方法
US20060147820A1 (en) Phase contrast alignment method and apparatus for nano imprint lithography
JPS63200042A (ja) パタ−ン欠陥検査方法及び装置
RU2029980C1 (ru) Лазерное проекционное устройство формирования изображения топологии интегральных схем
US6313916B1 (en) Position detecting system and projection exposure apparatus with the same
JP3143514B2 (ja) 面位置検出装置及びこれを有する露光装置
US4791306A (en) Method and apparatus for converting image into electrical signals
JPS61122648A (ja) 欠陥検査装置
JPS57200029A (en) Exposing device
JPH11260689A (ja) 均一光学系、パターン検査装置及びパターン検査方法
JP2854448B2 (ja) 光投影露光装置
KR20050079322A (ko) 반도체 소자의 디펙트 검사 장비
JP2634791B2 (ja) 投影式アライメント方法及びその装置
JPH0462167B2 (enrdf_load_stackoverflow)
JP2830430B2 (ja) 異物検査装置
JPS60249325A (ja) 投影露光装置