JPH0427703B2 - - Google Patents
Info
- Publication number
- JPH0427703B2 JPH0427703B2 JP57138684A JP13868482A JPH0427703B2 JP H0427703 B2 JPH0427703 B2 JP H0427703B2 JP 57138684 A JP57138684 A JP 57138684A JP 13868482 A JP13868482 A JP 13868482A JP H0427703 B2 JPH0427703 B2 JP H0427703B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- insulating film
- sio
- fluid material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 43
- 238000005530 etching Methods 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 238000001020 plasma etching Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- 239000012530 fluid Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 238000002294 plasma sputter deposition Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13868482A JPS5928358A (ja) | 1982-08-10 | 1982-08-10 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13868482A JPS5928358A (ja) | 1982-08-10 | 1982-08-10 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5928358A JPS5928358A (ja) | 1984-02-15 |
| JPH0427703B2 true JPH0427703B2 (de) | 1992-05-12 |
Family
ID=15227684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13868482A Granted JPS5928358A (ja) | 1982-08-10 | 1982-08-10 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5928358A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5984548A (ja) * | 1982-11-08 | 1984-05-16 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
| JPH0738383B2 (ja) * | 1984-10-29 | 1995-04-26 | 日本電信電話株式会社 | 半導体装置の製造方法 |
| JPS6224627A (ja) * | 1985-07-25 | 1987-02-02 | Sony Corp | ドライエツチング方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5363871A (en) * | 1976-11-18 | 1978-06-07 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
| JPS5791537A (en) * | 1980-11-29 | 1982-06-07 | Toshiba Corp | Manufacture of semiconductor device |
-
1982
- 1982-08-10 JP JP13868482A patent/JPS5928358A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5363871A (en) * | 1976-11-18 | 1978-06-07 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
| JPS5791537A (en) * | 1980-11-29 | 1982-06-07 | Toshiba Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5928358A (ja) | 1984-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0098687B1 (de) | Verfahren zur Herstellung von Halbleiteranordnungen mit dielektrischen Isolationszonen | |
| US4363830A (en) | Method of forming tapered contact holes for integrated circuit devices | |
| US4497108A (en) | Method for manufacturing semiconductor device by controlling thickness of insulating film at peripheral portion of element formation region | |
| US4030952A (en) | Method of MOS circuit fabrication | |
| JPH0427703B2 (de) | ||
| EP0293979A2 (de) | Oxydisolierungsstruktur ohne bird-beak für integrierte Schaltungen | |
| JPS5898943A (ja) | 半導体装置の製造方法 | |
| US5077236A (en) | Method of making a pattern of tungsten interconnection | |
| JPS59167030A (ja) | 半導体装置の製造方法 | |
| JPS6387741A (ja) | 半導体装置の製造方法 | |
| JPS6113375B2 (de) | ||
| JPH0148652B2 (de) | ||
| JPS61115335A (ja) | 半導体装置の製造方法 | |
| JPS6312381B2 (de) | ||
| JPS62232143A (ja) | 半導体装置の製造方法 | |
| KR930008845B1 (ko) | 반도체소자의 소자 격리방법 | |
| JPS60217645A (ja) | 半導体装置の製造方法 | |
| JPS61214536A (ja) | 半導体装置の製造方法 | |
| JPH0370385B2 (de) | ||
| JPS59167031A (ja) | 半導体装置の製造方法 | |
| JPS63257244A (ja) | 半導体装置およびその製造方法 | |
| JPH01207931A (ja) | 半導体装置の製造方法 | |
| JPH11176925A (ja) | 半導体装置の製造方法 | |
| JPH0370386B2 (de) | ||
| JPH05226479A (ja) | 半導体装置の製造方法 |