JPH0426789B2 - - Google Patents
Info
- Publication number
- JPH0426789B2 JPH0426789B2 JP63323301A JP32330188A JPH0426789B2 JP H0426789 B2 JPH0426789 B2 JP H0426789B2 JP 63323301 A JP63323301 A JP 63323301A JP 32330188 A JP32330188 A JP 32330188A JP H0426789 B2 JPH0426789 B2 JP H0426789B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- temperature
- glass substrate
- film
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 64
- 239000011521 glass Substances 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 description 47
- 238000000034 method Methods 0.000 description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 230000005669 field effect Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323301A JPH02363A (ja) | 1988-12-23 | 1988-12-23 | 光電変換装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323301A JPH02363A (ja) | 1988-12-23 | 1988-12-23 | 光電変換装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58161852A Division JPS5972165A (ja) | 1983-09-05 | 1983-09-05 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02363A JPH02363A (ja) | 1990-01-05 |
| JPH0426789B2 true JPH0426789B2 (de) | 1992-05-08 |
Family
ID=18153254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63323301A Granted JPH02363A (ja) | 1988-12-23 | 1988-12-23 | 光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02363A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3057520B2 (ja) * | 1991-01-30 | 2000-06-26 | 住友化学工業株式会社 | フェノール類のスルフィド化合物を主成分とする重合器内部表面の付着防止剤及び該付着防止剤を用いたビニル系単量体の重合方法 |
| JP2924259B2 (ja) * | 1991-04-11 | 1999-07-26 | 住友化学工業株式会社 | ナフトール類のスルフィド化合物からなる重合器内部表面の付着防止剤及び該付着防止剤を用いたビニル系単量体の重合方法 |
-
1988
- 1988-12-23 JP JP63323301A patent/JPH02363A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02363A (ja) | 1990-01-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0023021B1 (de) | Halbleitervorrichtung und Verfahren zu deren Herstellung | |
| JP2838318B2 (ja) | 感光装置及びその作製方法 | |
| US4866291A (en) | Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film | |
| EP0165764B1 (de) | Dünnfilmhalbleiterfotodetektoren für Verarmungsbetrieb | |
| EP0543951B1 (de) | Festkörperdetektor für elektromagnetische strahlung | |
| US5574293A (en) | Solid state imaging device using disilane | |
| US20080070340A1 (en) | Image sensor using thin-film SOI | |
| EP0494694B1 (de) | Photoelektrischer Wandler und Bildverarbeitungsgerät denselben verwended | |
| US6452212B1 (en) | Semiconductor device and method for operating the same | |
| JPH0426789B2 (de) | ||
| JPS6318340B2 (de) | ||
| US5731600A (en) | Image sensor device on insulating surface | |
| JPH0520912B2 (de) | ||
| JP3267375B2 (ja) | 固体撮像装置 | |
| US5635707A (en) | Photoelectric conversion device for use in sensing light reflected from medium surface | |
| JP2603285B2 (ja) | 光導電型イメージセンサの製造方法 | |
| JPH05136386A (ja) | イメージセンサ | |
| JPH06260626A (ja) | 画像読み取り装置 | |
| JP2505848B2 (ja) | 光導電型イメ―ジセンサ | |
| JPH04261070A (ja) | 光電変換装置 | |
| JP2601475B2 (ja) | 光電変換装置の作製方法 | |
| JPH0983010A (ja) | 赤外線受光装置およびその製造方法 | |
| JPH036865A (ja) | 薄膜半導体装置及びその製造方法 | |
| JP2823853B2 (ja) | 画像読取装置の製造方法 | |
| JPH03155139A (ja) | 読取装置及びその製造方法 |