JPS6318340B2 - - Google Patents
Info
- Publication number
- JPS6318340B2 JPS6318340B2 JP57226122A JP22612282A JPS6318340B2 JP S6318340 B2 JPS6318340 B2 JP S6318340B2 JP 57226122 A JP57226122 A JP 57226122A JP 22612282 A JP22612282 A JP 22612282A JP S6318340 B2 JPS6318340 B2 JP S6318340B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- glass
- temperature
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 51
- 239000011521 glass Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 description 46
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 25
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 238000003491 array Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57226122A JPS58112363A (ja) | 1982-12-24 | 1982-12-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57226122A JPS58112363A (ja) | 1982-12-24 | 1982-12-24 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9156679A Division JPS5617083A (en) | 1979-07-20 | 1979-07-20 | Semiconductor device and its manufacture |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58161852A Division JPS5972165A (ja) | 1983-09-05 | 1983-09-05 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58112363A JPS58112363A (ja) | 1983-07-04 |
| JPS6318340B2 true JPS6318340B2 (de) | 1988-04-18 |
Family
ID=16840180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57226122A Granted JPS58112363A (ja) | 1982-12-24 | 1982-12-24 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58112363A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03135525A (ja) * | 1983-09-20 | 1991-06-10 | Seiko Epson Corp | 固体イメージセンサーの製造方法 |
-
1982
- 1982-12-24 JP JP57226122A patent/JPS58112363A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58112363A (ja) | 1983-07-04 |
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