JPH0426337B2 - - Google Patents

Info

Publication number
JPH0426337B2
JPH0426337B2 JP59229003A JP22900384A JPH0426337B2 JP H0426337 B2 JPH0426337 B2 JP H0426337B2 JP 59229003 A JP59229003 A JP 59229003A JP 22900384 A JP22900384 A JP 22900384A JP H0426337 B2 JPH0426337 B2 JP H0426337B2
Authority
JP
Japan
Prior art keywords
monolayer
film
aromatic
monolayers
polycondensed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59229003A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61108633A (ja
Inventor
Kento Engeru Aran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shingijutsu Kaihatsu Jigyodan
Original Assignee
Shingijutsu Kaihatsu Jigyodan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shingijutsu Kaihatsu Jigyodan filed Critical Shingijutsu Kaihatsu Jigyodan
Priority to JP59229003A priority Critical patent/JPS61108633A/ja
Priority to US06/788,497 priority patent/US4681799A/en
Priority to DE8585113635T priority patent/DE3583134D1/de
Priority to EP85113635A priority patent/EP0188675B1/en
Publication of JPS61108633A publication Critical patent/JPS61108633A/ja
Priority to US07/203,081 priority patent/US4966743A/en
Publication of JPH0426337B2 publication Critical patent/JPH0426337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/026—Wholly aromatic polyamines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02285—Langmuir-Blodgett techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Laminated Bodies (AREA)
  • Moulding By Coating Moulds (AREA)
JP59229003A 1984-11-01 1984-11-01 ポリイミン単分子膜超薄フイルム及びその製造方法 Granted JPS61108633A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59229003A JPS61108633A (ja) 1984-11-01 1984-11-01 ポリイミン単分子膜超薄フイルム及びその製造方法
US06/788,497 US4681799A (en) 1984-11-01 1985-10-17 Ultrathin polymeric imine films and process for making the same
DE8585113635T DE3583134D1 (de) 1984-11-01 1985-10-26 Ultraduenne polyimine filme und verfahren zu deren fabrikation.
EP85113635A EP0188675B1 (en) 1984-11-01 1985-10-26 ultrathin polymeric imine films and process for making the same
US07/203,081 US4966743A (en) 1984-11-01 1988-06-07 Process for making ultrathin polymeric imine films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59229003A JPS61108633A (ja) 1984-11-01 1984-11-01 ポリイミン単分子膜超薄フイルム及びその製造方法

Publications (2)

Publication Number Publication Date
JPS61108633A JPS61108633A (ja) 1986-05-27
JPH0426337B2 true JPH0426337B2 (enExample) 1992-05-07

Family

ID=16885231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59229003A Granted JPS61108633A (ja) 1984-11-01 1984-11-01 ポリイミン単分子膜超薄フイルム及びその製造方法

Country Status (4)

Country Link
US (2) US4681799A (enExample)
EP (1) EP0188675B1 (enExample)
JP (1) JPS61108633A (enExample)
DE (1) DE3583134D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109942815A (zh) * 2019-03-20 2019-06-28 浙江福斯特新材料研究院有限公司 一种低介电常数的聚酰亚胺复合树脂及制备方法与应用

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62183881A (ja) * 1986-02-07 1987-08-12 Res Dev Corp Of Japan 複素芳香族高分子超薄膜の製造方法
US4801476A (en) * 1986-09-24 1989-01-31 Exxon Research And Engineering Company Method for production of large area 2-dimensional arrays of close packed colloidal particles
US4728576A (en) * 1987-04-10 1988-03-01 Hoechst Celanese Corporation Langmuir-Blodgett coating process
US6020457A (en) * 1996-09-30 2000-02-01 Dendritech Inc. Disulfide-containing dendritic polymers
WO2001004954A1 (en) * 1999-07-08 2001-01-18 Nanocell, Inc. Semiconductor devices and process for manufacture
JP3548794B2 (ja) * 1999-12-02 2004-07-28 独立行政法人物質・材料研究機構 親水化した酸化物固体表面の高速疎水化方法
DE10050305A1 (de) * 2000-10-09 2002-04-11 Adiam Life Science Ag Verfahren zur Herstellung von dünnen membranartigen Bauteilen
CN104277217A (zh) * 2013-07-11 2015-01-14 中国科学院大连化学物理研究所 一种亚胺键连接的聚合物材料及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3516971A (en) * 1966-11-09 1970-06-23 Webb James E Aromatic diamine-aromatic dialdehyde high - molecular - weight schiff - base polymers prepared in a monofunctional schiff-base
US3526611A (en) * 1966-11-09 1970-09-01 Webb James E Synthesis of polymeric schiff bases by schiff-base exchange reactions
CA1071035A (en) * 1975-01-20 1980-02-05 Rudolph J. Angelo Gas-barrier coated films, sheets or foils and method of preparation
US4180649A (en) * 1978-11-20 1979-12-25 Hughes Aircraft Company Homopolymerizable acetylene-terminated tetraimines and process for making same
US4178430A (en) * 1978-11-20 1979-12-11 Hughes Aircraft Company Polymeric Schiff's bases containing acetylene terminal groups
DE3062739D1 (en) * 1979-07-26 1983-05-19 Ube Industries Process for preparing aromatic polyimide semipermeable membranes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109942815A (zh) * 2019-03-20 2019-06-28 浙江福斯特新材料研究院有限公司 一种低介电常数的聚酰亚胺复合树脂及制备方法与应用
CN109942815B (zh) * 2019-03-20 2021-06-01 浙江福斯特新材料研究院有限公司 一种低介电常数的聚酰亚胺复合树脂及制备方法与应用

Also Published As

Publication number Publication date
EP0188675B1 (en) 1991-06-05
US4681799A (en) 1987-07-21
JPS61108633A (ja) 1986-05-27
EP0188675A1 (en) 1986-07-30
DE3583134D1 (de) 1991-07-11
US4966743A (en) 1990-10-30

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