JPH04263066A - Sputtering deposition device - Google Patents

Abstract

PURPOSE:To effectively increase the sputtering rate by forming a cylindrical cathode with the periphery coated with an insulator and the face opposed to an anode opened and having a specified inner diameter, and providing a target on the inner periphery of the opposed face. CONSTITUTION:A cylindrical cathode 12 is opposed to an anode 11, its periphery is coated with an insulating member 13, its face opposed to the anode 11 is opened, and the inner diameter is specified. A substrate 14 to be treated is set on the anode 11, a target 15 is placed on the inner periphery of the cathode 12, and sputtering is carried out in a requisite rarefied inert gas atmosphere. Consequently, a cation and an electron are concentrated on the surface of the target 15, and the sputtering rate is increased.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputter deposition apparatus, and more particularly to an improvement in the cathode structure of a sputter deposition apparatus.

0002

2. Description of the Related Art A schematic configuration of a conventional sputter deposition apparatus of this type is shown in FIG.

In the configuration of the conventional device shown in FIG.
1 is an anode, 2 is a flat cathode placed opposite to the anode 1, and 3 is placed on the opposite side of the anode 1, on the surface of which a desired thin film is applied by sputtering. A substrate 4 to be processed for formation is a target for sputtering disposed on the opposite surface of the flat cathode 2.

[0004] In the case of a conventional sputter deposition apparatus having this configuration, the flat cathode 2 is held at a negative potential or the ground potential while the anode 1 is By applying a high positive potential to the cathode 2, a discharge occurs between the flat cathode 2 and the anode 1, and the cationized inert gas atoms increase the potential difference in the discharge and the surface of the cathode 2. It is accelerated by the ion sheath and collides with target 4,
scattering the component atoms forming the target 4,
This is sputtered and deposited on the surface of the substrate 3 to be processed disposed on the side of the anode 1, and a desired thin film can be easily formed on the surface of the substrate 3 to be processed.

[0005]

[Problems to be Solved by the Invention] However, since the conventional sputter deposition apparatus configured as described above uses a flat cathode 2, during sputtering operation, There is a problem in that a thin flat ion sheath is formed, and the presence of this ion sheath limits the rate at which a thin film can be deposited on the surface of a substrate to be processed by sputtering.

The present invention has been made to solve these conventional problems, and its purpose is to improve the deposition rate of a thin film on the surface of a substrate to be processed by sputtering. An object of the present invention is to provide a sputter deposition apparatus of this type.

[0007]

[Means for Solving the Problems] In order to achieve the above-mentioned object, the sputter deposition apparatus according to the present invention has a cylindrical shape with a desired inner diameter and an opening on the opposite surface side of the anode as a cathode applied to the apparatus. and a target is arranged on the inner circumferential surface corresponding to the opposing surface.

That is, the present invention comprises an anode and a cylindrical cathode whose outer circumferential surface is insulated and whose surface facing the anode is open, and a substrate to be processed is disposed on the surface opposite the anode. The sputter deposition apparatus is characterized in that a target is disposed on an inner circumferential surface corresponding to the opposing surface of the cathode.

[0009]

[Operation] Therefore, in the configuration of the sputter deposition apparatus using the cathode structure, when the inner diameter of the cylindrical portion of the cathode is relatively small, the ion sheaths formed on the inner wall surface of the cathode contact and overlap each other, and the surface of the target The cations and electrons can be concentrated on the surface, thereby effectively increasing the sputtering rate.

0010

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a sputter deposition apparatus according to the present invention will be described in detail below with reference to FIG.

FIG. 1 is an explanatory diagram showing the outline of a sputter deposition apparatus to which an embodiment of the present invention is applied.

Also in the configuration of the embodiment apparatus shown in FIG. 1, reference numeral 11 is an anode, 12 is installed opposite to the anode 11, and the outer peripheral surface is insulated with an insulating member 13, and the opposite surface side is insulated. A cylindrical cathode formed with an opening and a relatively small inner diameter is a so-called hollow cathode electrode, and 14 is disposed on the opposite surface side of the anode 11, and the surface thereof is coated with a target material by sputtering. A substrate 15 to be processed for forming a thin film is a target for sputtering disposed on the inner peripheral surface corresponding to the opposing surface of the hollow cathode electrode 12.

[0013] In the case of the conventional sputter deposition apparatus having this configuration, the hollow cathode electrode 12 is held at the - potential or the ground potential in the required dilute inert gas atmosphere. Anode 11
A discharge is generated between the hollow cathode electrode 12 and the anode 11 by applying a high positive potential to As a result, the positive ions and electrons accelerated by the potential difference in the discharge can be concentrated and collided with the surface of the target 15. For this reason, the inert gas atoms scattered by the collision are caused to collide on the anode 11 side. The sputtering speed at which the sputtering is deposited on the surface of the substrate 14 to be processed is greatly improved, and the desired thin film can be formed quickly and easily on the surface of the substrate 14 to be processed.

[0014]

As described in detail above, according to the present invention, the cathode is formed into a cylindrical shape with an insulating coating on the outer peripheral surface and an opening on the side facing the anode, and the inner periphery corresponding to the opposite surface is formed into a cylindrical shape. Since the target is arranged on the surface, when the inner diameter of the cylindrical part is relatively small, the ion sheaths formed on the inner wall surface of the cathode will touch and overlap each other during the sputtering operation. Therefore, cations and electrons can be concentrated on the surface of the target, and as a result, the sputtering speed can be significantly improved.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram showing an outline of a sputter deposition apparatus to which an embodiment of the present invention is applied.

FIG. 2 is a configuration explanatory diagram showing an outline of a conventional sputter deposition apparatus.

[Explanation of symbols]

11 Anode 12 Holo cathode electrode (cylindrical cathode) 13
Insulating member 14 Processed substrate 15 Target

Claims (1)

[Claims] 1. A method comprising: an anode; and a cylindrical cathode having a predetermined inner diameter, the outer circumferential surface of which is insulatingly coated and the opposite surface of the anode open, and a substrate to be processed is disposed on the opposite surface of the anode. In addition, a sputter deposition apparatus characterized in that a target is disposed on an inner circumferential surface corresponding to the opposing surface of the cathode.