JPH10330935A - Sputtering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a new sputtering device capable of forming thin coating uniform in coating characteristics and coating thickness at a high speed and high in utilizing efficiency for the material. SOLUTION: As to a sputtering device SP1, a cylindrical target 21 is provided in a vacuum tank, a cylindrical substrate holder 3 is arranged on the axial center of the target 21, and gradient cylindrical magnets 22 arranged in such a manner that the inner circumferences of the pole faces are gradiently opposited to the axial center on the outer circumference and so as to surround the target 21 and a rotating means 91 rotating the gradient cylindrical magnets 22 around the axial center are provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cylindrical container comprising a thin film material surrounding a cylindrical substrate on which a thin film is formed. A high-density plasma is generated on the outer peripheral surface of the target by generating a magnetic field orthogonal to the generated electric field by the magnetic field generating means disposed on the inner peripheral surface side of the target, and ions in the plasma are directed in the direction of the electric field. The present invention relates to a sputtering apparatus that generates sputtered particles by accelerating and colliding with a target to precipitate and form on a substrate.

[0002]

2. Description of the Related Art The sputtering phenomenon in which sputtered particles are generated from the surface of a target is caused by applying an electric field to a low-pressure atmosphere gas introduced into a vacuum vessel to generate a glow discharge to convert the gas into plasma, and to generate ions in the plasma. Is accelerated in the direction of the electric field, and when it collides with a target, which is one electrode forming the electric field, constituent atoms of the target pop out.

[0003] The film formation utilizing this sputtering phenomenon has little thermal damage on the processing surface on which a thin film is formed and good film quality. However, the film formation speed is regarded as important. A magnetron method that increases the density of the plasma by confining the electrons in the plasma in a magnetic field by applying a magnetic field to it and increasing the chance of one electron colliding with the neutral gas molecule, thereby increasing the ion density Has been adopted.

FIG. 10 shows a conventional configuration example of a film forming apparatus using the magnetron method. As shown in the figure,
In this film forming apparatus, a cylindrical target 1 made of a thin film material is arranged concentrically around a cylindrical substrate on which a thin film is formed, and a magnet 2 is arranged concentrically with the target 1 on the outer peripheral surface side of the target 1. ing.

[0005] Cylindrical substrate holder 3 and cylindrical target 1
When the power supply 4 is connected between them to generate glow discharge,
Since a tunnel-shaped magnetic field 7 is formed on the inner peripheral surface side of the target 1 by magnetic lines of force exiting from the magnetic pole 5 and entering the magnetic pole 6, electrons in the plasma generated by the glow discharge are:
Under the action of this magnetic field, a drift motion having a trajectory and a motion direction as indicated by an arrow 8 is performed.

As a result, the jumping distance of electrons drifting in a magnetic field is increased, and more gas molecules are ionized by one electron, so that the gas is converted into a high-density plasma. As a result, the ionization density in the plasma increases. The number of sputtered particles increases, and the deposition rate increases.

[0007]

However, in the conventional magnetic pole configuration as described above, the magnetic poles 5 and 6 are connected to the target 1.
To form a tunnel-like closed magnetic field on the inner peripheral surface of
The gasification of the gas also takes place in the lines of magnetic force that bend in a tunnel shape.
The density is higher at the top of the tunnel, where the component perpendicular to the electric field is large, that is, at the center of the tunnel, and the plasma density decreases as it approaches the magnetic pole. Will do.

[0008] Accordingly, the consumption of the target, which proceeds with the film formation, also occurs only in the vicinity of the center of the tunnel, so that the utilization efficiency of the target material is low, the service life of the target is shortened, and the deformation of the target surface due to the consumption causes the substrate to lose its surface. There is a problem that the uniformity of the film thickness distribution is impaired. (Introduction to thin film technology for parts and devices,
p. 74-78; Sogo Electronic Publishing Company)

In order to solve this problem, an apparatus has been proposed which corrects a magnetic field by electric means to form uniform plasma (Japanese Patent Laid-Open No. 63-171879), but requires a new power supply means. In addition, when the target size becomes large, it is necessary to increase the power to be supplied for correcting the magnetic field.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems in the prior art, and a novel sputtering apparatus capable of forming a thin film having uniform film characteristics and thickness at high speed and having high material use efficiency. The purpose is to provide.

[0011]

In order to solve the problems of the prior art, a sputtering apparatus according to claim 1 of the present invention comprises:
A target having a cylindrical target in a vacuum chamber, a cylindrical substrate holder disposed on the axis of the target, and an inner circumference of a magnetic pole surface inclined to the outer circumference of the target with respect to the axis. An inclined cylindrical magnet arranged to surround the
A rotating means for rotating the inclined cylindrical magnet around an axis is provided.

According to a second aspect of the present invention, there is provided a sputtering apparatus comprising:
A target having a cylindrical target in a vacuum chamber, a cylindrical substrate holder disposed on the axis of the target, and an inner circumference of a magnetic pole surface inclined to the outer circumference of the target with respect to the axis. With an inclined cylindrical magnet arranged to surround
Rotating means for rotating the target about an axis;
A rotation means for rotating the substrate holder around an axis is provided.

According to a third aspect of the present invention, there is provided a sputtering apparatus comprising:
In the configuration according to claims 1 and 2, a plurality of the inclined cylindrical magnets are arranged in the axial direction.

According to a fourth aspect of the present invention, there is provided a sputtering apparatus comprising:
In the configuration according to any one of claims 1, 2, and 3, a shield plate for limiting a sputtered particle jump range is provided between the target and the substrate loaded on the substrate holder.

According to a fifth aspect of the present invention, there is provided a sputtering apparatus comprising:
5. The structure according to claim 1, further comprising an auxiliary electrode between the target and the substrate loaded on the substrate holder, the auxiliary electrode having a positive potential with respect to the target and allowing a sputtered particle to pass therethrough. And

According to the sputtering apparatus of the present invention having the above-described structure, a thin film having uniform film characteristics and thickness can be formed at a high speed, which is particularly effective when a large number of thin films need to be formed on a substrate. In addition, since a film can be formed with high material utilization efficiency, it is extremely effective for thinning an expensive material. Furthermore, since the target surface can be sputtered uniformly, it is possible to prevent the deposition of insulators during reactive sputtering and to form a stable film.

[0017]

Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. The embodiment described below is a part of a preferred embodiment of the present invention,
Although various limitations that are preferable in terms of the technical configuration are given, the scope of the present invention is not limited to these embodiments unless otherwise specified in the following description.

FIG. 1 shows a first example of a sputtering apparatus according to the present invention.
It is a front sectional view of an embodiment. FIG. 2 is a top view of the sputtering apparatus of FIG. As shown in both figures, the sputtering apparatus SP1 according to the present invention has a cylindrical target 21 in a vacuum chamber (not shown), and further has a cylindrical substrate holder 3 disposed on the axis of the target 21. Has been established. The substrate 25 is loaded on the substrate holder 3.

Further, on the outer peripheral surface side of the cylindrical target 21, an inclined cylindrical magnet 2 arranged so as to surround the cylindrical target 21 so that the inner periphery of the magnetic pole face is inclined and opposed to the axis.
2 are arranged. Further, a rotating means 91 for rotating the inclined cylindrical magnet 22 around the axis is provided.

A yoke 23 is provided on the inner peripheral side of the target 21.
An axial magnetic field 24 is generated. This axial magnetic field 2
4 are distributed in an inclined annular shape, and the magnetic field 24
, The time average of the plasma density formed on the inner peripheral surface of the target 21 becomes uniform over the entire inner peripheral surface. As a result, high-speed sputtering proceeds uniformly on the inner peripheral surface of the target, the service life of the target is extended, and uniformity of film characteristics and film thickness distribution is secured.

Further, since the region to be sputtered on the target surface moves relatively to the substrate 25, uniform film formation can be performed without localizing film characteristics and film thickness.

Further, in the case of a conventional magnetron sputtering apparatus in which a sputtered area on a target is limited to a specific place, when performing reactive DC sputtering, an insulator is gradually deposited in other areas, Although arcing occurs, the film quality is deteriorated and the film formation speed is reduced. However, according to the structure of the present invention, the insulator is cleaned over the entire surface of the target, so that the deterioration of the film quality and the film formation speed due to arcing can be avoided. it can.

FIG. 3 shows a second embodiment of the sputtering apparatus according to the present invention.
It is a front sectional view of an embodiment. FIG. 4 is a top view of the sputtering apparatus of FIG. As shown in both figures, the sputtering apparatus SP2 according to the present embodiment has a cylindrical target 31 in a vacuum chamber, and arranges a cylindrical substrate holder 32 on the axis of the target 31; An inclined cylindrical magnet 22 arranged so that the inner circumference of the magnetic pole face is inclined with respect to the axis and surrounds the target 31, and rotating means 93 for rotating the target 31 around the axis;
Rotating means 92 for rotating substrate holder 32 about an axis.
Is provided.

The rotating means 92 rotates the substrate holder 32 clockwise ω2, while the rotating means 93 rotates the target 31 counterclockwise ω3. With this configuration, the time average of the plasma density formed on the inner peripheral surface of the target 21 becomes uniform over the entire inner peripheral surface, and the region to be sputtered on the target surface moves relative to the substrate. Since a thin film having uniform characteristics and film thickness can be formed at a high speed and the target surface can be uniformly sputtered, it is possible to prevent the deposition of an insulator during the reactive sputtering, and a stable film can be formed.

FIG. 5 shows a third embodiment of the sputtering apparatus according to the present invention.
It is a front sectional view of an embodiment. FIG. 6 is a top view of the sputtering apparatus of FIG. The same parts as those in the above embodiment are denoted by the same reference numerals. As shown in both figures, the sputtering apparatus SP3 according to the present embodiment is configured by arranging a plurality of inclined cylindrical magnets 22A to 22F in the axial direction.

By arranging a plurality of magnets in the axial direction as described above, the high-density plasma region is increased, and thus the film is formed while maintaining the time-average uniformity of the plasma density over the entire inner peripheral surface. Speed can be even faster.

FIG. 7 shows a fourth embodiment of the sputtering apparatus according to the present invention.
It is a top view of an embodiment. The same parts as those in the above embodiment are denoted by the same reference numerals. As shown in the figure, the sputtering apparatus SP4 according to the present embodiment is configured such that the target 21 and the substrate 25 loaded on the substrate holder 3 are placed between the target 21 and the substrate 25.
A shield plate 30 for limiting the range of the sputtered particles is provided.

According to this structure, the film composition and the crystal growth orientation after the reaction can be controlled by limiting the incident component when the shield plate 30 is subjected to reactive sputtering or alloy sputtering, thereby improving the uniformity of the film characteristics. be able to.

FIG. 8 shows a fifth embodiment of the sputtering apparatus according to the present invention.
It is a top view of an embodiment. The same parts as those in the above embodiment are denoted by the same reference numerals. As shown in the figure, the sputtering apparatus SP5 according to the present embodiment has a structure in which the target 21 and the substrate 25 loaded on the substrate holder 3 are placed between the target 21 and the substrate 25.
A net-like auxiliary electrode 40 having a positive potential with respect to the target 21 and capable of passing sputtered particles is provided.

With this configuration, since the discharge is maintained by the electric field between the mesh-like auxiliary electrode 40 and the target 21 through which the sputtered particles can pass, the plasma is stably generated even when the magnetic field or the substrate moves, and the plasma is maintained. it can.

FIG. 9 shows a sixth embodiment of the sputtering apparatus according to the present invention.
It is a top view of an embodiment. The same parts as those in the above embodiment are denoted by the same reference numerals. As shown in the figure, the sputtering apparatus SP6 according to the present embodiment has a structure in which the target 21 and the substrate 25 loaded on the substrate holder 3 are placed between the target 21 and the substrate 25.
A plurality of rod-shaped auxiliary electrodes 41 having a positive potential are arranged at intervals with respect to the target 21. Sputtered particles can pass through this interval.

According to this configuration, the discharge is maintained by the electric field between the rod-shaped auxiliary electrode 41 and the target 21.
Plasma can be generated and maintained stably even when the magnetic field or the substrate moves.

As described above, according to the present invention, a thin film having a uniform film characteristic and thickness can be formed at a high speed, which is particularly effective when a large number of thin films need to be formed on a substrate. In addition, since a film can be formed with high material utilization efficiency, it is extremely effective for thinning an expensive material. Further, since the target surface can be uniformly sputtered, the deposition of an insulator during reactive sputtering can be prevented, and a stable film can be formed.

[0034]

As described in detail above, claim 1 of the present invention
The sputtering apparatus according to the above uses an inclined annular magnetic field moving in the circumferential direction instead of a conventional fixed magnetic field as a magnetic field orthogonal to the electric field generated between the substrate and the target. Therefore, the time average of the magnetic field strength becomes uniform over the entire inner peripheral surface of the target, and therefore, a high-density plasma is uniformly generated on the inner peripheral surface of the target, whereby high-speed sputtering proceeds uniformly on the inner peripheral surface of the target. In addition, the service life of the target is extended, and uniformity of film characteristics and film thickness distribution is also ensured.

Further, since the region to be sputtered on the target surface moves relatively to the substrate, a uniform film can be formed without localizing film characteristics and film thickness.

Further, the reactive D is determined by ordinary magnetron sputtering in which the sputtered area on the target is limited.
In the case of performing C sputtering, an insulator is gradually deposited in other regions, causing arcing to cause deterioration in film quality and a decrease in film formation rate. However, according to the present invention, cleaning of the insulator over the entire surface of the target is performed. Is performed, the above problem can be avoided.

According to the sputtering apparatus of the second aspect of the present invention, a uniform film is formed over the entire surface, and the region to be sputtered on the target surface moves relative to the substrate, resulting in film characteristics and film formation. Since a thin film having a uniform thickness can be formed at a high speed and the target surface can be uniformly sputtered, it is possible to prevent the deposition of an insulator during the reactive sputtering, and a stable film can be formed.

According to the sputtering apparatus of the third aspect of the present invention, by arranging a plurality of magnets in the axial direction, the high-density plasma region is increased, whereby the time average of the plasma density over the entire inner peripheral surface is obtained. The film forming speed can be further increased while maintaining the uniformity of the film thickness.

According to the sputtering apparatus of the fourth aspect of the present invention, the shield plate can control the film composition and the crystal growth orientation after the reaction by limiting the incident component during the reactive sputtering or the alloy sputtering. In addition, uniformity of film characteristics can be improved.

According to the sputtering apparatus of the fifth aspect of the present invention, since the electric discharge is maintained by the electric field between the auxiliary electrode and the target, even when the magnetic field or the substrate moves, the plasma is generated stably and maintained. There is an effect that can be.

[Brief description of the drawings]

FIG. 1 is a front sectional view of a first embodiment of a sputtering apparatus according to the present invention.

FIG. 2 is a top view of the sputtering apparatus of FIG.

FIG. 3 is a front sectional view of a second embodiment of the sputtering apparatus according to the present invention.

FIG. 4 is a top view of the sputtering apparatus of FIG. 3;

FIG. 5 is a front sectional view of a third embodiment of the sputtering apparatus according to the present invention.

FIG. 6 is a top view of the sputtering apparatus of FIG.

FIG. 7 is a top view of a fourth embodiment of the sputtering apparatus according to the present invention.

FIG. 8 is a top view of a fifth embodiment of the sputtering apparatus according to the present invention.

FIG. 9 is a top view of a sixth embodiment of the sputtering apparatus according to the present invention.

FIG. 10 is a schematic sectional view of a conventional sputtering apparatus.

[Explanation of symbols]

 SP1 Sputtering apparatus according to the present invention 3 Substrate holder 21 Target 22 Inclined cylindrical magnet 23 Yoke 24 Magnetic field 25 Substrate 26 Rotating cylinder 91 Rotating means ω1 Rotating direction

Claims (5)

[Claims] 1. A target having a cylindrical shape in a vacuum chamber, a cylindrical substrate holder disposed on an axis of the target, and an inner circumference of a magnetic pole surface inclined with respect to the axis on an outer circumference of the target. And a rotating means for rotating the inclined cylindrical magnet about an axis. 2. A target having a cylindrical shape in a vacuum chamber, a cylindrical substrate holder disposed on an axis of the target, and an inner circumference of a magnetic pole surface inclined with respect to the axis on an outer circumference of the target. An inclined cylindrical magnet arranged so as to face and surround the target, rotating means for rotating the target about an axis, and rotating means for rotating the substrate holder about the axis. Sputtering equipment. 3. The sputtering apparatus according to claim 1, wherein a plurality of said inclined cylindrical magnets are arranged in an axial direction. 4. A sputtering apparatus according to claim 1, wherein a shield plate for limiting a range of a sputtered particle is provided between said target and a substrate loaded on said substrate holder. Sputtering equipment. 5. The sputtering apparatus according to claim 1, wherein the target has a positive potential between the target and the substrate loaded on the substrate holder with respect to the target so that sputtered particles can pass therethrough. A sputtering apparatus having electrodes.