JPH11241164A - Winding type sputtering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a structure in which the consumption of a cylindrical target material is made uniform as much as possible, a thin film uniform in the film characteristics and film thickness can be formed at a high speed, and furthermore, the utilizing efficiency of the target material can be improved as for a magnetron system winding type sputtering device. SOLUTION: In the above winding type sputtering device, annular magnets arranged in a concentric circular shape with a cylindrical target 21 on the outer circumference of the target are made an inclined cylindrical magnet ring 22 in which the upper and lower edge faces are inclined to the axial center of the cylindrical target 21, and the inclined cylindrical magnet ring 22 is rotated around the axial center in a direction opposite to the running direction of a film substrate 25, or the cylindrical target 21 is rotated in a direction opposite to the running direction of the film substrate wound round the cylindrical substrate holder 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cylindrical substrate plate holder which is arranged concentrically with a cylindrical target made of a thin film material surrounding a cooling can for running a film in a vacuum container. (The outer surface of the cooling can is generally a cylindrical substrate plate holder) and a magnetic field orthogonal to the electric field generated in the radial direction between the cylindrical target and the cylindrical target. The magnetic field is generated by magnetic field generating means arranged radially outward, thereby generating high-density plasma inside the cylindrical target in the radial direction, and accelerating ions in the plasma in the direction of the electric field to generate the high-density plasma. The present invention relates to a winding type sputtering apparatus that generates sputter particles by colliding with an inner surface to form a thin film on a surface of a substrate film wound around the cylindrical substrate holder. Is shall. The present invention is particularly effective for forming a thin film layer on a long film substrate because a thin film having uniform film properties and film thickness can be formed on a substrate film surface at a high speed. Can be remarkably improved, which is extremely effective for forming a thin film using an expensive material. Further, since the surface of the cylindrical target can be sputtered uniformly, it is possible to prevent the deposition of an insulator during the reactive sputtering and to form a stable film.

[0002]

2. Description of the Related Art Normally, thin films are formed on long film substrates by:
It is performed by a vapor deposition method or a sputtering method, and in the sputtering method, a magnetron method as described below is mainly used. In the sputtering phenomenon in which sputter particles are generated from the target surface, an electric field is applied to a low-pressure atmosphere gas introduced into a vacuum vessel to generate a glow discharge, and the gas is turned into plasma. This is a phenomenon in which constituent atoms are ejected from the inner surface of the target by accelerating in the direction and colliding this with one electrode forming the electric field, that is, the target. Film formation in which a thin film is formed by adhering the sputtered particles to a film substrate by utilizing this sputtering phenomenon has the advantages that the treated surface on which the thin film is formed has little thermal damage and good film quality. On the other hand, emphasis is placed on how to increase the film deposition rate. As a method of increasing the rate, a magnetic field is applied to the plasma to confine electrons in the plasma in the magnetic field, and one neutral gas molecule of the electron. A magnetron method is employed in which the ion density is increased by increasing the chance of collision with the magnet, thereby increasing the ion density. An outline of a conventional technique of a film forming apparatus using the magnetron method will be described with reference to FIG. In the conventional film forming apparatus shown in FIG. 1, a cylindrical target 1 made of a thin film material surrounds a cylindrical substrate holder 3 on which a thin film is formed.
Are arranged concentrically, and on the outside of the cylindrical target 1 in the radial direction, upper and lower (upper and lower in the figure; the same applies hereinafter) annular magnets 2 whose ends are an N pole and an S pole, respectively. It is arranged concentrically with the target 1. When a power supply 4 is connected between the cylindrical substrate holder 3 and the cylindrical target 1 to generate a glow discharge, the cylindrical target 1
A tunnel-shaped magnetic field 7 is formed radially inward of the inner surface by magnetic lines of force exiting from the magnetic pole 6 and entering the magnetic pole 5, so that the electrons in the plasma generated by the glow discharge are affected by this magnetic field. A drift motion having a trajectory and a motion direction as indicated by an arrow 8 is performed. As a result, the flight distance of electrons drifting in the magnetic field is extended, and many gas molecules are ionized by one electron, and the ion density of the gas is increased.
As a result, the ionization density in the plasma increases, the number of sputtered particles increases, and the film formation speed increases. However, in such a conventional magnetic pole configuration, the magnetic poles 5 and 6 have the cylindrical target 1.
In order to form a tunnel-like closed magnetic field on the radially inner side of the tunnel, in the magnetic field lines curved in a tunnel-like manner, the gas is turned into plasma at a higher density at the top of the tunnel where the component orthogonal to the electric field is larger, that is, at the center of the tunnel, Since the ion density decreases as it approaches the magnetic pole side, the plasma is generated in a state limited to the vicinity of the center position of the tunnel inside the cylindrical target 1 in the radial direction. Therefore, the consumption of the target, which proceeds with the film formation, also occurs concentratedly in the center of the tunnel and in the vicinity thereof, so that the target material is consumed unevenly, so that its use efficiency is poor and the service life of the cylindrical target 1 is shortened. Due to the uneven consumption, the inner surface of the cylindrical target is deformed, which causes a problem that the distribution of the film thickness formed on the surface of the film substrate becomes non-uniform. Introduction to Thin-Film Technology ”(pp. 74-78). In particular, when forming a film on a long film substrate, there is also a problem that the film characteristics greatly fluctuate due to a change with time of the film formation state accompanying consumption of the cylindrical target 1. In order to solve this problem, it has been known that a magnetic field is corrected by electric means to form a uniform plasma (Japanese Patent Laid-Open No. 63-171879).
This requires a new power supply means, and when the target size increases, the power to be input for correcting the magnetic field increases.

[0003]

SUMMARY OF THE INVENTION According to the present invention, a cylindrical target made of a thin film material is arranged concentrically around a cylindrical substrate holder on which a thin film is formed, and a magnet is provided radially outside the cylindrical target. Regarding a magnetron type winding type sputtering device that is arranged concentrically,
Devise the mechanism and structure so that the consumption of the cylindrical target material is made as uniform as possible, a thin film with uniform film characteristics and thickness can be formed at high speed, and the utilization efficiency of the target material can be improved. Is the subject.

[0004]

[Measures taken to solve the problem]

A first means taken to solve the above problem is that a cylindrical target made of a thin film material is concentrically arranged around a cylindrical substrate holder, and a magnet is provided radially outside of the cylindrical target. Assuming a magnetron type winding type sputtering device where are arranged concentrically,
It is composed of the following elements (a) and (b). (B) An annular magnet arranged radially outside the cylindrical target concentrically with the target is an inclined cylindrical magnet ring whose upper and lower end surfaces are inclined with respect to the axis of the cylindrical target. (B) A means for rotating the inclined cylindrical magnet ring around the axis in a direction opposite to the running direction of the film substrate. The outer surface of the cooling can is usually the cylindrical substrate holder described above, but the present invention is not limited to this, and the outer peripheral surface of the cooling can having the cylindrical surface around which the film substrate is wound is described above. Hits the cylindrical substrate holder. The “cylindrical substrate holder” described below also means this.

[0005]

The sputtered thin film is formed on the surface of the film substrate while traveling in one direction while the film substrate is wound around the cylindrical substrate holder, but is arranged concentrically outside the cylindrical substrate holder in the radial direction. The ring-shaped magnet, ie, the inclined cylindrical magnet ring, rotates in the direction opposite to the running direction of the film substrate. Since the upper and lower end surfaces (N-pole, S-pole) of the inclined cylindrical magnet ring are inclined with respect to the axis of the cylindrical target, the tunnel-shaped magnetic field causes the cylindrical target and the cylindrical substrate holder to rotate. It becomes inclined with respect to the axis. The distribution of the plasma density at a certain moment is not as uniform as in the prior art,
Since the tunnel-shaped magnetic field is inclined with respect to the center of rotation, when the inclined cylindrical magnet ring makes one rotation around the cylindrical target, the plasma density is equalized around the entire circumference of the target,
The average plasma density per unit time, that is, the time average density, is averaged over the entire circumference. Therefore, the inner surface of the cylindrical target is uniformly irradiated with the plasma and is uniformly consumed. In addition, the film quality of the sputtered thin film due to the non-uniform density distribution of the plasma, the non-uniformity of the film thickness,
By rotating the cylindrical substrate holder relative to the inner surface of the cylindrical target, the cylindrical substrate holder is leveled and uniformized. However, the rotation direction of the inclined cylindrical magnet ring is changed in the running direction of the film substrate (the rotation direction of the substrate holder). The same direction), the relative rotation speed between the thin film forming surface and the target surface is further increased, so that the uniformity of the film quality and thickness of the thin film formed on the film substrate surface is further improved. improves.

[0006]

A second means taken for solving the above problem is that a cylindrical target made of a thin film material is concentrically arranged around a cylindrical substrate holder, and a magnet is provided radially outside of the cylindrical target. Is presumed to be a magnetron type winding type sputtering apparatus which is arranged concentrically with a cylindrical target, and is constituted by the following elements (a) and (b). (B) The annular magnet which is arranged concentrically with the cylindrical target radially outside the cylindrical target is an inclined cylindrical magnet ring whose upper and lower end surfaces are inclined with respect to the axis of the cylindrical target. (B) means for rotating the cylindrical target in a direction opposite to a running direction of the film substrate wound around the cylindrical substrate holder.

[0007]

The sputtered thin film is formed on the surface of the film substrate while traveling in one direction while being wound around the cylindrical substrate holder. On the other hand, a cylindrical target concentrically arranged outside the cylindrical substrate holder in the radial direction rotates in the direction opposite to the running direction of the film substrate. On the other hand, a magnet ring concentrically arranged on the outer peripheral surface side of the cylindrical substrate holder, that is, an inclined cylindrical magnet ring rotates in a direction opposite to the running direction of the film substrate. Since the upper and lower end surfaces of the inclined cylindrical magnet ring are inclined with respect to the axis of the cylindrical target, the tunnel-shaped magnetic field is inclined with respect to the axes of the cylindrical target and the cylindrical substrate holder. Since the inclined cylindrical magnet ring is fixed, the distribution of plasma density is the same as that of the prior art. At a certain moment, the inner surface of the cylindrical target is uneven in the circumferential direction according to the distribution of plasma density. However, since the tunnel-shaped magnetic field is inclined with respect to the center of the cylindrical target and the cylindrical target rotates, the cylindrical target makes one rotation in the same manner as in Solution 1. The wear of the inner surface of the target during that time, that is, the time-average wear, is uniformed over the entire inner surface.
In addition, the non-uniformity of the film quality and thickness of the sputtered thin film due to the non-uniform plasma density distribution is made uniform by rotating the inner surface of the cylindrical target relative to the film substrate. However, by making the rotation direction of the cylindrical target opposite to the running direction of the film substrate (the same as the rotation direction of the cylindrical substrate holder), the relative rotation between the thin film forming surface of the film substrate and the cylindrical target surface is achieved. Since the speed is further increased, the quality and thickness of the thin film on the surface of the film substrate are further improved.

[0008]

Embodiments of Solution 1 and Solution 2

Embodiment 1 A plurality of slanted cylindrical magnet rings are arranged in the axial direction in Solution 1 and Solution 2.

According to the present invention, an inclined cylindrical magnet ring which is arranged to be inclined with respect to the axis of the cylindrical substrate holder and the cylindrical target,
A number of inclined tunnel-like magnetic fields are formed. Therefore, as the number of the inclined cylindrical magnet rings increases, the high-density plasma region increases, and the film forming speed increases.

[0009]

Second Embodiment A flat shield plate is arranged at a constant interval in the space between the cylindrical target and the cylindrical substrate holder according to the first or second embodiment or the first embodiment, and a flying circle of the sputtered particles is arranged. The circumferential range has been specified.

The annular space between the cylindrical target and the cylindrical substrate holder is divided into a large number of fan-shaped spaces by a flat shield plate, and the flight spaces of the sputtered particles are adjacent to each other.
As defined by the single shield plate, the circumferential flight range of the sputtered particles is thereby limited, so that the flight direction is almost radially inward. Therefore, the incident angle of the sputtered particles with respect to the surface of the cylindrical substrate holder (the surface on which the film substrate is wound) is regulated within a certain range. Therefore, the film composition and the orientation of crystal growth are controlled within a certain range, and the film characteristics are made uniform.

[0010]

[Embodiment 3] Between the cylindrical target and the cylindrical substrate holder in Solution 1, Solution 2 or Embodiment 1, an auxiliary which has a positive potential with respect to the cylindrical target and does not hinder sputtered particles. Providing electrodes.

In a magnetron type sputtering apparatus, abnormal discharge is likely to occur due to a difference in the shape of the substrate, its electrical characteristics (such as insulating properties), fluctuations, etc., the discharge becomes unstable, or the discharge is maintained. Discharge may become unstable, for example, it may become difficult, and auxiliary electrodes may be provided to deal with the unstable discharge. Since the strength of the magnetic field lines of the tunnel-shaped magnetic field is not uniform between the SN poles, the inclined cylindrical magnet ring rotates, thereby rotating the tunnel-shaped magnetic field.
With the rotation of the magnetic field, the intensity of the magnetic field lines at an arbitrary point changes (vibrates) drastically, so that the magnetic field at that point is not stable. Therefore, the ion density is not stable,
This can lead to a decrease in the overall average ion density, which is sensitively affected by the above-mentioned discharge instability. By providing a positive auxiliary electrode for the target between the cylindrical substrate as one electrode and the cylindrical target as the other electrode, and discharging between the cylindrical target and the auxiliary electrode, The above-mentioned effects due to the instability of the discharge can be reduced as much as possible. If the auxiliary electrode becomes an obstacle to the sputter particles, a thin shadow will be formed on the thin film forming surface and the uniformity and uniformity of the thin film will be impaired. It must be of such a shape and structure that it does not. When the cylindrical target is rotated without rotating the tilted cylindrical magnet ring, the ion density is not stable, so there is no particular drop in the average ion density. The general effect of stabilization can be reduced as much as possible.

[0011]

[Other Embodiments] A flat shield plate is arranged at a constant interval in a space between a cylindrical target and a cylindrical substrate holder according to the first, second, or first embodiment, so that a flying circle of sputtered particles is formed. Auxiliary electrodes that define a circumferential range and have a positive potential with respect to the cylindrical target and do not hinder sputtered particles are provided in the space.

[0012]

The synergistic effect of the above-mentioned operation of the second embodiment and the above-mentioned operation of the third embodiment further improves the film forming speed, the quality of the thin film, and the uniformity of the film thickness.

[0013]

【Example】

Embodiment 1 Embodiment 1 shown in FIGS. 2 (a) and 2 (b)
In the figure, one inclined cylindrical magnet ring 22 is arranged radially outward of the cylindrical target 21 so as to surround the cylindrical target 21 so as to be inclined with respect to its axis. The cylindrical substrate holder 3 (or the cooling can 27
Cylindrical outer surface. A film substrate 25 is wound around the film substrate 25 in the description of the embodiment, and the film substrate 25 runs in the direction of the arrow shown while being drawn out from one side and taken up by the other. The pay-out roll, the take-up roll, and the space between these rolls and the cylindrical substrate holder 3 are surrounded by an anti-adhesion plate 28 to prevent them from being exposed to sputter particles therebetween. A large number of rod-shaped magnets 22a are densely arranged on the outer periphery, with the north and south poles being placed above and below, respectively, to form one inclined cylindrical magnet ring 22.
The upper and lower end surfaces of the inclined cylindrical magnet ring 22 are inclined with respect to the axis of the cylindrical target 21, and are arranged concentrically with the cylindrical target 21. An inclined cylindrical magnet ring 22 is provided radially inward of the cylindrical target 21.
, A tunnel-shaped magnetic field 24 is generated via the yoke 23. The tunnel-shaped magnetic field 24 is an inclined tunnel-shaped magnetic field whose upper edge and lower edge are inclined with respect to the axis of the cylindrical target 21.
The inclined cylindrical magnet ring 22 is driven by an appropriate driving mechanism by an electric motor in the direction of the arrow opposite to the running direction of the film substrate 25, and the tunnel-shaped magnetic field 24 rotates accordingly. At a certain moment, the plasma density is unevenly distributed along the inclined tunnel-shaped magnetic field 24, but is equalized during one rotation of the inclined tunnel-shaped magnetic field 24. Therefore, the cylindrical target 21
The time average of the density of the plasma formed inside in the radial direction becomes uniform. As a result, the plasma is transferred to the cylindrical target 2.
The inner surface of the cylindrical target 21 is evenly irradiated, and the inner surface of the cylindrical target 21 is uniformly consumed, so that the service life of the cylindrical target 21 is extended. Further, the sputtered region on the inner surface of the cylindrical target 21 rotates relative to the film substrate 25 and moves relative thereto, and also rotates the magnetic field in the direction opposite to the running direction of the film substrate. The relative rotation speed between the tunnel-shaped magnetic field 24 and the film substrate 25 can be increased without increasing the rotation speed of the cylindrical magnet ring 22. Therefore, it is possible to secure uniformity of film characteristics and film thickness distribution while keeping the rotation speed of the inclined cylindrical magnet ring 22 relatively low. Thereby, a uniform thin film is formed on the long film substrate at high speed. Further, in the case of ordinary magnetron sputtering in which the region to be sputtered (the region to be irradiated with ion particles) on the cylindrical target 21 is limited to a specific place, the reactivity D
When performing C sputtering, the region irradiated with the ion particles is unevenly distributed, so that the insulator is gradually deposited in the region not irradiated, and arcing occurs to cause deterioration of the film quality and a reduction in the film forming speed. Rotates around the cylindrical target, so that the entire inner surface of the cylindrical target is evenly irradiated with ion particles to generate sputter particles. Therefore, the above problem does not occur.

[0014]

Embodiment 2 Embodiment 2 shown in FIGS. 3 (a) and 3 (b)
Although the basic structure is the same as that of the first embodiment, the difference is that a large number of inclined cylindrical magnet rings 22 are densely arranged one above the other. A large number of tunnel-shaped magnetic fields 24 for each inclined cylindrical magnet ring 22 overlap. As the number of the tunnel-shaped magnetic fields 24 increases, the number of high-density plasma regions increases, so that the film formation speed improves.
In this case, the above-mentioned tunnel-shaped magnetic field rotates around the substrate holder 3 along the inner peripheral surface of the cylindrical target 21. The time average of the density of the plasma formed at the time is more uniform over the entire circumference. The above-described first and second embodiments are examples in which the inclined cylindrical magnet ring 22 is rotated by an appropriate driving mechanism to rotate a tunnel-shaped magnetic field (solution 1). Since the ring 22 is fixed and the cylindrical target 21 is rotated by an appropriate driving mechanism by an electric motor to rotate the sputter generation surface, the consumption of the inner surface of the cylindrical target can be made uniform. While maintaining the mechanical structure of the second embodiment as it is,
Another embodiment may be used in which the cylindrical target 21 is rotated while the cylindrical target 21 is fixed.

[0015]

Embodiment 3 Embodiment 3 shown in FIG. 4 and FIG. 5 is an embodiment in which the flight range of sputtered particles is defined by a flat shield plate.
In the space between the cylindrical substrate holder 3 and the cylindrical target 21, five flat plate-like elongated shield plates 30 are arranged at regular intervals in the radial direction. Since the flight space of the sputter particles is defined by the two shield plates 30, the flight of the sputter particles in the circumferential direction is restricted, and the flight direction is almost radially inward.
Therefore, the incident angle of the sputtered particles with respect to the surface of the cylindrical substrate holder 3 (the surface around which the film substrate 25 is wound) is restricted to a certain range. Therefore, the composition of the thin film and the orientation of the crystal growth are controlled thereby, and the variation in the characteristics of the thin film is reduced. Shield plate 30
The effect becomes higher as the interval between them is smaller, but if the interval is too small, the number of shield plates increases, so that the plasma generation efficiency is reduced and the film forming speed is reduced. If provided at intervals of the central angle of 45 degrees, the effect of providing the shield plate is sufficiently ensured. The thickness of the shield plate 30 is preferably limited to a necessary limit in consideration of its own strength.

[0016]

Embodiment 4 Embodiment 4 shown in FIG. 6 is an embodiment in which an auxiliary electrode is interposed in a cylindrical space between the cylindrical substrate holder 3 and the cylindrical target 21. The auxiliary electrode 31 in the fourth embodiment is a mesh electrode. It is desirable that the material of the mesh be conductive and have excellent corrosion resistance, for example, stainless steel. The thickness of this mesh wire is 0.5-1
mm, the vertical and horizontal spacing of the wire is about several mm. The material and thickness of the mesh wire may be appropriately selected in consideration of the current value, electric resistance, durability, and rigidity. Further, in consideration of the uniformity of the discharge by the auxiliary electrode, it is desirable that the mesh interval is small, and it is desirable that the mesh is small in order to disperse and uniform the obstacles to the sputtered particles. However, if the mesh is too small, the passage resistance of the sputter increases, which affects the thin film moldability, especially the uniformity of the film thickness. There is no choice but to select the spacing between mesh wires. The auxiliary electrode is disposed almost at the center between the cylindrical substrate holder 3 and the cylindrical target 21, and has a positive potential with respect to the target, generally the cylindrical substrate holder 3.
The potential is maintained at substantially the same level as the voltage of the outer side surface of the cooling can.

[0017]

Fifth Embodiment A fifth embodiment shown in FIG. 7 is another embodiment in which an auxiliary electrode is interposed.
a. The material of the rod-shaped electrode 31a is stainless steel, the thickness of the line is 1 mm, and the interval is a center angle of 4 mm.
5 degrees. The material and thickness of the rod-shaped electrode 31a may be appropriately selected in consideration of the current value, electric resistance, durability, and rigidity, but the interval is preferably smaller if the uniformity of discharge by the auxiliary electrode is considered, In order to disperse the obstacles to the sputtered particles and make them uniform, it is desirable that they are small. On the other hand, if the wire is too thick, it will be an obstacle to the sputtered particles and a thin shadow of the rod-shaped electrode will be formed on the thin film formation surface, which may impair the uniformity of the film quality and thickness. There is no other choice. In the fifth embodiment, since the discharge interval by the auxiliary electrode 31a is coarser than in the fourth embodiment, the auxiliary electrode is arranged somewhat closer to the cylindrical target. The potential of this auxiliary electrode is the same as that of the fourth embodiment.

[0018]

As described above, in the present invention, the cylindrical substrate holder (generally, the cylindrical outer side surface of the cooling can) is used.
A magnetic field perpendicular to the electric field generated between the cylindrical target and the cylindrical target is defined as a tunnel-shaped magnetic field tilted with respect to the axis of the cylindrical target, and this tilted magnetic field is centered on the axis of the cylindrical target. By rotating, the non-uniformity of the ion density due to the non-uniformity of the magnetic field strength is equalized in a unit time, so that
The high-density plasma is uniformly generated on the radially inner side of the cylindrical target, thereby uniformly depleting the inner surface of the cylindrical target and significantly extending the service life of the cylindrical target. On the other hand, a sputtered thin film is formed uniformly by rotating a region to be sputtered (a region irradiated with plasma particles) on the inner surface of the cylindrical target relative to the cylindrical substrate holder. Characteristics and film thickness are made uniform. In a conventional magnetron sputtering apparatus in which the sputtered region on the inner surface of the cylindrical target is unevenly distributed on the inner surface of the cylindrical target, when performing reactive DC sputtering, an insulator is gradually deposited in an unsputtered region, and arcing occurs. However, there is a problem that the film quality is deteriorated due to the occurrence, and the film forming rate is slowed down.However, in the present invention, since the inner surface of the cylindrical target is uniformly sputtered, the insulator is not deposited as described above. Therefore, the above problems associated with the deposition of the insulator do not occur. Further, the speed of forming a thin film can be further improved by interposing an auxiliary electrode, and the uniformity of film quality and film thickness can be further improved. A known means for correcting a magnetic field by electric means to form a uniform plasma (JP-A-63-1)
In the case of 71879), a new power source is required, and when the target size becomes large, there remains a problem that the power to be input for correcting the magnetic field becomes large. Since the structure is extremely simple, the mechanism and structure of the sputtering apparatus are not complicated, and a large load power is not required. Therefore, the manufacturing cost of the apparatus is low,
There is no particular increase in operating costs. This is a very great advantage of the present invention. Furthermore, by interposing a shield plate and an auxiliary electrode, a high-quality thin film of high quality (film quality such as crystal orientation, uniformity of film thickness) can be formed on a film substrate by high-speed film formation. A long film can be manufactured at extremely low cost.

[Brief description of the drawings]

FIG. 1 is a sectional view of a conventional example.

FIG. 2A is a plan view of a first embodiment of the present invention,

FIG. 2B is a side sectional view of the same embodiment.

FIG. 3A is a plan view of a second embodiment,

FIG. 3B is a side sectional view of the same embodiment.

FIG. 4 is a plan view of a third embodiment.

FIG. 5 is a side sectional view of a third embodiment.

FIG. 6 is a plan view of a fourth embodiment.

FIG. 7 is a plan view of a fifth embodiment. DESCRIPTION OF SYMBOLS 1: Cylindrical target 2: Permanent magnet ring 3: Cylindrical substrate holder 4: Power supply 5: Magnetic pole 6: Magnetic pole 7: Tunnel-shaped magnetic field 8: Electron motion direction 21: Cylindrical target 22: Inclined cylindrical Magnet ring 22a: Magnet 23: Yoke 24: Tunnel-shaped magnetic field 25: Film substrate 27: Cooling can 28: Shielding plate 30: Shield plate 31, 31a: Auxiliary electrode

Claims (6)

[Claims] 1. A cylindrical target made of a thin film material is arranged concentrically around a cylindrical substrate holder, and an annular magnet is arranged concentrically with the cylindrical target radially outward of the cylindrical target. Wherein the circular annular magnet is an inclined cylindrical magnet ring whose upper and lower end surfaces are inclined with respect to the axis of the cylindrical target. The winding type sputtering apparatus having means for rotating the inclined cylindrical magnet ring around the axis in a direction opposite to a running direction of the film substrate wound around the holder. 2. A cylindrical target made of a thin-film material is arranged concentrically around a cylindrical substrate holder, and an annular magnet is arranged concentrically with the cylindrical target radially outward of the cylindrical target. In the magnetron winding take-up sputtering apparatus, the annular magnet is an inclined cylindrical magnet ring whose upper and lower end surfaces are inclined with respect to the axis of the cylindrical target, and the cylindrical substrate holder The above-mentioned winding type sputtering apparatus comprising means for rotating the above-mentioned cylindrical target in a direction opposite to a running direction of the wound film substrate. 3. The roll-to-roll sputtering apparatus according to claim 1, wherein a plurality of inclined cylindrical magnet rings are arranged in the axial direction. 4. The method according to claim 1, wherein a flat shield plate is arranged at a predetermined interval in a space between the cylindrical target and the cylindrical substrate holder to define a circumferential range of the flight of the sputtered particles.
The winding type sputtering apparatus according to claim 2 or 3. 5. An auxiliary electrode between the cylindrical target and the cylindrical substrate holder, the auxiliary electrode having a positive potential with respect to the cylindrical target and not interfering with sputtered particles. The rewind type sputtering apparatus according to claim 3. 6. A flat shield plate is arranged at regular intervals in a space between a cylindrical target and a cylindrical substrate holder to define a circumferential range of flight of sputter particles,
4. The winding type sputtering apparatus according to claim 1, wherein an auxiliary electrode which has a positive potential with respect to the cylindrical target and does not interfere with sputter particles is provided in the space.