JPH10287977A - Sputtering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering device capable of forming thin film uniform in film characteristics and the distribution of film thickness at a high speed, furthermore high in the utilizing efficiency of a target material and having a long service life. SOLUTION: A cylindrical target 12 composed of a thin film material is set on the center part in a vacuum tank, a cylindrical substrate holder 14 is coaxially arranged around the cylindrical target 12, and, on the cylindrical substrate holder 14, a substrate 16 is mounted opposite to the outer circumferential face of the cylindrical target 12. At the inside of the cylindrical target 12, a supporting cylinder 20 and an inclined cylindrical magnet 22 are coaxially arranged together, and the N magnetic pole face and S magnetic pole face of the inclined cylindrical magnet 22 are inclined to the center axis. By a rotary mechanism (not shown in figure), the inclined cylindrical magnet 22 is rotated around the center axis via the supporting cylinder 20.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a sputter apparatus.
In particular, the present invention relates to a coaxial magnetron sputtering system.

[0002]

2. Description of the Related Art A sputtering phenomenon in which sputtered particles are emitted from a target surface is based on the fact that when an electric field is applied to a low-pressure atmosphere gas introduced into a vacuum vessel, a glow discharge is generated and the atmosphere gas is turned into plasma. This is a phenomenon in which the ions inside are accelerated in the direction of the electric field and collide with a target which is one of the electrodes forming the electric field, and at the time of this collision, constituent atoms of the target fly out as sputter particles. An apparatus for forming a thin film on a substrate by using such a sputtering phenomenon, that is, a sputtering apparatus, has the advantages of less heat damage to the processing surface on which the thin film is formed and good film quality. Used as a forming device.

[0003] As the next problem of this sputtering apparatus, importance has been placed on the film forming speed. As a method of increasing the deposition rate of the sputtering apparatus, a magnetic field is applied to the plasma to confine electrons in the plasma to the magnetic field, thereby increasing the chance of one electron colliding with neutral atmosphere gas molecules. To make the plasma denser,
A magnetron system that increases the ion density to increase the sputtering speed is used.

Hereinafter, a coaxial magnetron sputtering apparatus, which is one of the magnetron sputtering apparatuses, will be described with reference to FIGS. Here, FIG.
3 is a schematic sectional view showing a conventional coaxial magnetron sputtering apparatus, FIG. 14 is an enlarged view of a main part of the coaxial magnetron sputtering apparatus shown in FIG. 13, and FIG. 15 explains the operation of the main part of the coaxial magnetron sputtering apparatus shown in FIG. FIG.

A vacuum chamber 50 into which a predetermined discharge gas is introduced into a vacuum is grounded. This vacuum tank 5
A cylindrical target 52 made of a thin film material is provided at a central portion in the area 0. In addition, this cylindrical target 5
2, a cylindrical substrate holder 54 is disposed so as to have the same central axis as the cylindrical target 52, that is, coaxially. And this cylindrical substrate holder 5
On the substrate 4, a substrate to be formed is a cylindrical target 5.
2 to be mounted facing the outer peripheral surface. In addition, the cylindrical target 52 and the cylindrical substrate holder 54
Are connected to a power supply 56 for applying a voltage between them.

A support cylinder 58 is arranged inside the cylindrical target 52 so as to have the same center axis as the cylindrical target 52, that is, coaxially. A plurality of cylindrical permanent magnets 60 are mounted on the outer periphery of the support cylinder 58 so as to be arranged in the central axis direction. At the lower end of the support cylinder 58, a cooling water inlet 62 for introducing cooling water into the support cylinder 58, and a cooling water outlet 64 for discharging cooling water circulated inside the support cylinder 58 are provided. Is provided.

Next, the operation of the coaxial magnetron sputtering apparatus will be described. After a predetermined discharge gas is introduced into the vacuum in the vacuum chamber 50, a voltage is applied between the cylindrical target 52 and the cylindrical substrate holder 54 by the power source 56, and the cylindrical target 52 and the cylindrical substrate A glow discharge is generated by an electric field generated in the radial direction between the holder 54 and the holder 54, and the discharge gas on the outer periphery of the cylindrical target 52 is turned into plasma.

At this time, as shown by arrows in FIG. 14 and bold arrows in FIG. 15, the outer surface of the cylindrical target 52 protrudes from the N pole surface of the cylindrical permanent magnet 60 and the S pole surface. A magnetic field 66 is generated in an annular shape due to the magnetic field lines entering. For this reason, the electrons in the plasma generated by the glow discharge receive the action of the magnetic field 66 and perform a drift motion as shown by the thin-line arrows in FIG. Many of the discharge gas molecules are ionized by the electrons, and the discharge gas is turned into plasma at high density.

As a result, the density of ions in the plasma that is accelerated by the electric field generated in the radial direction between the cylindrical target 52 and the cylindrical substrate holder 54 and collides with the outer peripheral surface of the cylindrical target 52 increases, and 52
Spatter particles emitted from the outer peripheral surface increase. That is,
High-speed sputtering is realized. Accordingly, the film forming speed when sputter particles adhere to the substrate mounted on the cylindrical substrate holder 54 to form a thin film increases.

The following technical literature describing the coaxial magnetron sputtering apparatus as described above includes Haruhiro Ogawa and Naoyoshi Hosokawa, “Introduction to Thin Film Technology for Components and Devices” (Sogo Denshi Shuppan, 1992, p. 74-78), JP-A-61
-266572, JP-A-63-227763, JP-B-2-24909, JP-B-3-75632, JP-B5-88312, JP-B-7-35574 and the like.

[0011]

In the above-mentioned conventional coaxial magnetron sputtering apparatus, a plurality of cylindrical permanent magnets 60 are arranged inside a cylindrical target 52 along the central axis thereof. A plurality of magnetic fields 66 formed on the outer peripheral surface side of the cylindrical target 52 by magnetic lines of force exiting from the N-pole surface of the cylindrical permanent magnet 60 and entering the S-pole surface become tunnel-shaped closed magnets. In the magnetic field lines curved in a tunnel shape, the orthogonal component of the electric field generated in the radial direction between the cylindrical target 52 and the cylindrical substrate holder 54 becomes larger at the top of the tunnel, that is, at the center of the tunnel. For this reason,
At the center of the tunnel, the discharge gas is turned into plasma at a higher density, and the plasma density becomes lower as it approaches the N-pole surface and the S-pole surface. That is, the plasma generated on the outer peripheral surface of the cylindrical target 52 is limited to the vicinity of the center of the tunnel.

Therefore, the wear of the cylindrical target 52 which proceeds with the film formation also locally progresses only in a specific area near the center of the tunnel, that is, a so-called erosion area. As a result, the utilization efficiency of the target material becomes poor,
There is a problem that the service life of the cylindrical target 52 determined by the consumption depth in the erosion region is shortened. In addition, since the outer peripheral surface of the cylindrical target 52 is deformed due to local consumption of the cylindrical target 52, there is a problem that the uniformity of the film thickness distribution of the thin film formed on the substrate is impaired.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and it is possible to form a thin film having a uniform film characteristic and a uniform film thickness at a high speed and to use a target material with high efficiency. It is an object to provide a sputtering apparatus having a long life.

[0014]

The above object is achieved by the following sputtering apparatus according to the present invention. That is, the sputtering apparatus according to claim 1 is provided in a vacuum chamber, and a cylindrical target that emits sputter particles made of a thin film material by collision of ions in plasma, and is disposed around the cylindrical target, A substrate holder for mounting a substrate facing the outer peripheral surface of a cylindrical target, and an inclined cylindrical magnet arranged inside the cylindrical target so as to have the same central axis, and a magnetic pole surface inclined with respect to the central axis, A rotating mechanism for rotating the inclined cylindrical magnet about a central axis.

As described above, in the sputtering apparatus according to the first aspect, the inclined cylindrical magnet whose magnetic pole faces, that is, the N magnetic pole face and the S magnetic pole face are inclined with respect to the central axis, is provided inside the cylindrical target. The magnetic field in the central axis direction generated by the inclined cylindrical magnet is distributed in an inclined annular shape on the outer peripheral surface side of the cylindrical target by being arranged coaxially and rotating the inclined cylindrical magnet around its central axis. At the same time, the inclined annular magnetic field rotates toward the outer periphery of the cylindrical target. That is, as the magnetic field orthogonal to the electric field generated between the substrate and the cylindrical target, an inclined annular magnetic field rotating in the outer peripheral direction of the cylindrical target is used instead of the conventional fixed magnetic field. For this reason, the intensity of the magnetic field becomes uniform over the entire outer periphery of the cylindrical target, the plasma density generated by the glow discharge is increased, and the time average of the plasma density is uniform over the entire outer periphery of the cylindrical target. Looks like

Accordingly, high-speed sputtering proceeds uniformly over the entire surface of the outer periphery of the cylindrical target, thereby increasing the film forming speed when a thin film is formed on the substrate. Since the film moves relatively with respect to the film, the uniformity of the film characteristics and the film thickness distribution of the thin film is also ensured. In addition, since the consumption of the cylindrical target progresses uniformly over the entire outer periphery, the utilization efficiency of the cylindrical target is increased, and the service life of the cylindrical target is prolonged. Further, since cleaning of the insulator is performed on the entire outer periphery of the cylindrical target, the reactive DC
When (DC) sputtering is performed, it is possible to prevent the deterioration of the film quality and the reduction of the film forming speed due to the arcing (abnormal discharge) caused by the gradual deposition of an insulator in a specific region, thereby enabling stable film formation. Become.

According to a second aspect of the present invention, there is provided the sputtering apparatus according to the first aspect, wherein a cylindrical target is rotated around the central axis instead of the rotating mechanism for rotating the inclined cylindrical magnet around the central axis. By having a rotation mechanism for rotating the substrate holder and a rotation mechanism for rotating the substrate holder around the central axis, the cylindrical substrate holder on which the cylindrical target and the substrate are mounted rotates even if the inclined cylindrical magnet does not rotate. Therefore, the intensity of the magnetic field becomes uniform over the entire outer periphery of the cylindrical target, and the plasma density generated by the glow discharge is increased, as in the case of the sputtering apparatus according to the first embodiment. The time average of the plasma density becomes uniform over the entire outer periphery of the cylindrical target. Therefore, the same operation as in the case of the sputtering apparatus according to the first aspect is obtained.

In this case, in order to move the region to be sputtered on the outer peripheral surface of the cylindrical target relative to the substrate, the cylindrical target and the cylindrical substrate holder are rotated in opposite directions to each other. It is desirable to rotate at different rotational angular velocities in the same direction.

Further, in the sputtering apparatus according to the third aspect of the present invention, a plurality of inclined cylindrical magnets are arranged in the direction of the central axis in the sputtering apparatus according to the first or second aspect, so that the magnetic field of the magnetic field can be reduced. Since the region with high strength increases, the plasma density generated by the glow discharge is increased more than in the case of the sputtering apparatus according to claim 1 or 2, and the plurality of inclined cylindrical magnets rotate. Therefore, as in the case of the sputtering apparatus according to claim 1 or 2, the time average of the plasma density becomes uniform over the entire outer periphery of the cylindrical target. Therefore, the same effect as in the case of the sputtering apparatus according to claim 1 or 2 can be obtained, and the film forming speed when forming a thin film on the substrate is further increased by increasing the high density plasma region.

According to a fourth aspect of the present invention, in the sputtering apparatus according to any one of the first to third aspects, between the cylindrical target and the substrate holder, the sputter particles emitted from the cylindrical target are removed. By the configuration in which the shield plate that limits the flight range is arranged, of the sputter particles toward the substrate, the component in the direction perpendicular to the substrate surface increases, The same effect as in the case of such a sputtering apparatus is obtained, and the film characteristics and the uniformity of the film thickness distribution of the thin film formed on the substrate are further improved.

According to a fifth aspect of the present invention, in the sputtering apparatus according to any one of the first to fourth aspects, instead of the substrate holder on which the substrate is mounted, the sputtering device is provided on substantially the circumference of the cylindrical target. By having a configuration having a film substrate traveling portion that travels the film substrate in opposition to the outer periphery of the cylindrical target, even if the film formation target is replaced with a long film substrate from the substrate, The same operation as in the case of the sputtering apparatus according to any of the above, that is, the use of a thin film formed on a film substrate at a high film formation rate, the use efficiency of the cylindrical target is improved, the service life is extended, and arcing occurs. The deterioration of the film quality and the reduction of the film forming speed can be prevented.

According to a sixth aspect of the present invention, in the sputtering apparatus according to any one of the first to fifth aspects, a positive potential is applied to the cylindrical target between the cylindrical target and the substrate holder. With the configuration in which the auxiliary electrode is arranged, discharge is maintained by the electric field between the auxiliary electrode and the cylindrical target,
Since the plasma generated over the entire outer periphery of the cylindrical target is stably maintained, the same effect as in the case of the sputtering apparatus according to any one of claims 1 to 5 is obtained, and further, the film characteristics and the film thickness distribution of the thin film Is improved.

In this case, the shape of the auxiliary electrode must be a shape through which sputtered particles can freely pass. Therefore, it is desirable that the auxiliary electrode is, for example, a net-like or rod-like auxiliary electrode.

[0024]

Embodiments of the present invention will be described below with reference to the accompanying drawings. (First Embodiment) A coaxial magnetron sputtering apparatus according to a first embodiment of the present invention will be described with reference to FIGS. Here, FIG. 1 is a schematic sectional view showing a coaxial magnetron sputtering apparatus according to the present embodiment, FIG. 2 is an enlarged view of a main part of the coaxial magnetron sputtering apparatus shown in FIG. 1, and FIG. 3 is a coaxial magnetron sputtering apparatus shown in FIG. It is a top view of the principal part of a magnetron sputtering apparatus. The coaxial magnetron sputtering apparatus according to the present embodiment corresponds to claim 1.

The vacuum chamber 10 into which a predetermined discharge gas is introduced into a vacuum is grounded. This vacuum tank 1
A cylindrical target 12 made of a thin film material is provided at a central portion in the area 0. In addition, this cylindrical target 1
2, a cylindrical substrate holder 14 is disposed so as to have the same central axis as the cylindrical target 12, that is, coaxially. And this cylindrical substrate holder 1
On the substrate 4, a substrate 16 as a film formation target is mounted so as to face the outer peripheral surface of the cylindrical target 12.
In addition, the cylindrical target 12 and the cylindrical substrate holder 1
4 is a power supply 18 for applying a predetermined voltage between the two.
It is connected to the.

Further, inside the cylindrical target 12, a support cylinder 20 and an inclined cylindrical magnet 22 attached to the outer periphery of the support cylinder 20 are arranged so that both have the same central axis as the cylindrical target 12, that is, coaxial. It is arranged in a shape.
The inclined cylindrical magnet 22 is characterized in that its N pole face and S pole face are inclined with respect to the central axis. Further, yokes 24 are provided on the N-pole surface and the S-pole surface of the inclined cylindrical magnet 22. Further, the support cylinder 20
Is connected to a rotating mechanism (not shown), and is characterized in that the inclined cylindrical magnet 22 is rotated around its central axis via the support cylinder 20.

Next, the operation of the coaxial magnetron sputtering apparatus shown in FIGS. 1 to 3 will be described. After a predetermined discharge gas is introduced into the vacuum in the vacuum chamber 10, a predetermined voltage is applied between the cylindrical target 12 and the cylindrical substrate holder 14 by the power supply 18, and these cylindrical targets 12 and A glow discharge is generated by an electric field generated in a radial direction between the cylindrical target holder 14 and the cylindrical target 1.
(2) The discharge gas on the outer periphery is turned into plasma.

At this time, as shown by arrows in FIGS. 1 and 2, the yoke 24
A magnetic field line 26 in the center axis direction is generated in an annular shape by lines of magnetic force exiting from the N magnetic pole surface of the inclined cylindrical magnet 22 and entering the S magnetic pole surface via the magnetic field. Moreover, since the N-pole surface and the S-pole surface of the inclined cylindrical magnet 22 are inclined with respect to the central axis, the magnetic field 2
6 are distributed in an inclined annular shape.

Further, as shown by arrows in FIGS. 2 and 3, the inclined cylindrical magnet 22 is rotated around its central axis by a rotating mechanism, so that the magnetic field 26 also rotates in the outer peripheral direction of the cylindrical target 12. Thus, the strength becomes uniform over the entire outer periphery of the cylindrical target 12. Therefore, the electrons in the plasma generated by the glow discharge will
The flying distance is extended by the drift motion under the action of the gas, so that a large number of discharge gas molecules are ionized by one electron, so that the discharge gas is turned into a high-density plasma and the density is increased. The time average of the plasma density becomes uniform over the entire outer periphery of the cylindrical target 12.

As a result, the ion density in the plasma colliding with the outer peripheral surface of the cylindrical target 12 increases uniformly, and the sputter particles emitted from the outer peripheral surface of the cylindrical target 12 increase uniformly. That is, high-speed sputtering proceeds uniformly over the entire outer periphery of the cylindrical target 12.
Therefore, the substrate 1 mounted on the cylindrical substrate holder 14
The film forming speed when forming a thin film on the substrate 6 increases, and the region to be sputtered on the outer peripheral surface of the cylindrical target 12 moves relatively to the substrate 16. The uniformity of the thickness distribution is also ensured.

Further, the consumption of the cylindrical target 12 does not locally proceed, but proceeds uniformly over the entire outer periphery thereof, so that the utilization efficiency of the cylindrical target 12 is increased and the service life thereof is extended.

Further, in the case of the conventional coaxial magnetron sputtering apparatus, the region to be sputtered on the outer peripheral surface of the cylindrical target is limited to a specific place. The insulator is deposited and arcing occurs, causing deterioration of the film quality and a decrease in the deposition rate. However, in the coaxial magnetron sputtering apparatus according to the present embodiment, the insulator is cleaned over the entire outer periphery of the cylindrical target 12. Such a problem is avoided.

As described above, according to the coaxial magnetron sputtering apparatus of the present embodiment, the cylindrical target 12
Inside, an inclined cylindrical magnet 22 whose N-pole surface and S-magnetic pole surface are inclined with respect to the central axis is coaxially arranged, and the inclined cylindrical magnet 22 rotates around its central axis. As a result, the magnetic field 26 generated by the inclined cylindrical magnet 22 is distributed in an inclined annular shape on the outer peripheral surface side of the cylindrical target 12, and rotates in the outer peripheral direction of the cylindrical target 12, and becomes uniform over the entire outer peripheral surface of the cylindrical target 12. Since the intensity is increased, the density of the plasma generated by the glow discharge is increased, and the time average of the plasma density is uniform over the entire outer periphery of the cylindrical target 12.

Therefore, the high-speed sputtering proceeds uniformly over the entire outer periphery of the cylindrical target 12 and the substrate 16
Since the film forming speed when forming a thin film thereon can be increased, and the region to be sputtered on the outer peripheral surface of the cylindrical target 12 moves relatively to the substrate 16, the thin film is formed. Uniformity of characteristics and film thickness distribution can also be ensured.

Further, since the consumption of the cylindrical target 12 proceeds uniformly over the entire outer periphery thereof, the use efficiency of the cylindrical target 12 can be improved and the service life thereof can be extended.

Further, since the insulator is cleaned over the entire outer periphery of the cylindrical target 12, the reactive DC
When sputtering is performed, it is possible to prevent deterioration of film quality and a decrease in film formation speed due to arcing caused by gradually depositing an insulator in a specific region.

(Second Embodiment) A coaxial magnetron sputtering apparatus according to a second embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG. Here, FIG. 4 is an enlarged view of a main part of the coaxial magnetron sputtering apparatus according to the present embodiment, and FIG. 5 is a plan view of a main part of the coaxial magnetron sputtering apparatus shown in FIG. The same components as those of the coaxial magnetron sputtering device shown in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof is omitted. The coaxial magnetron sputtering apparatus according to the present embodiment corresponds to claim 2.

The overall configuration of the coaxial magnetron sputtering apparatus according to this embodiment is substantially the same as that of the coaxial magnetron sputtering apparatus according to the first embodiment. That is, a cylindrical target 12 is provided at a central portion in the vacuum chamber 10, and a cylindrical substrate holder 14 for mounting a substrate 16 on the outer periphery of the cylindrical target 12 is provided around the cylindrical target 12. It is arranged coaxially with the cylindrical target 12. The cylindrical target 12 and the cylindrical substrate holder 14 are connected to a power supply 18 for applying a predetermined voltage between the two.

Further, inside the cylindrical target 12, a support cylinder 20 and an inclined cylindrical magnet 22 attached to the outer periphery of the support cylinder 20 are both arranged coaxially with the cylindrical target 12, and the inclined cylindrical magnet 22 N pole face and S
The pole face is inclined with respect to the central axis. The yoke 24 is provided on the N-pole surface and the S-pole surface of the inclined cylindrical magnet 22.
Is provided.

However, in the case of the first embodiment, a rotation mechanism for rotating the inclined cylindrical magnet 22 around its central axis via the support cylinder 20 is provided. However, the coaxial magnetron according to the present embodiment is provided. In the sputtering apparatus, instead of this rotating mechanism, a rotating mechanism (not shown) for rotating the cylindrical target 12 around its central axis and a substrate 16 are provided.
It is characterized in that rotation mechanisms (not shown) for rotating the cylindrical substrate holder 14 on which the is mounted around its central axis are provided.

Next, the operation of the coaxial magnetron sputtering apparatus shown in FIGS. 4 and 5 will be described. As in the case of the first embodiment, after a predetermined discharge gas is introduced into the vacuum in the vacuum chamber 10, a predetermined power is supplied between the cylindrical target 12 and the cylindrical substrate holder 14 by the power supply 18. By applying a voltage to generate glow discharge, the discharge gas on the outer periphery of the cylindrical target 12 is turned into plasma. At this time, on the outer peripheral surface side of the cylindrical target 12, as shown by an arrow in FIG. 4, the magnetic force lines coming out of the N magnetic pole surface of the inclined cylindrical magnet 22 and entering the S magnetic pole surface via the yoke 24, in the direction of the central axis. Is generated in an annular shape, and the N magnetic pole surface and the S magnetic pole surface of the inclined cylindrical magnet 22 are inclined with respect to the central axis, so that the magnetic field 26 is distributed in an inclined annular shape.

However, unlike the case of the first embodiment, as shown by the arrows in FIGS. 4 and 5, the cylindrical target 12 is rotated around its central axis by a rotating mechanism and the substrate 16 is rotated. Cylindrical substrate holder 14 loaded with
Is rotated around its central axis by the rotation mechanism in a direction opposite to the rotation direction of the cylindrical target 12, so that the time average of the intensity of the magnetic field 26 becomes uniform over the entire outer periphery of the cylindrical target 12. For this reason, the electrons in the plasma generated by the glow discharge perform a drift motion under the action of the magnetic field 26, thereby increasing the flight distance,
A large number of discharge gas molecules are ionized by one electron, and the discharge gas is converted into a high-density plasma. The time average of the high-density plasma density is uniform over the entire outer periphery of the cylindrical target 12. Become.

As a result, even if the magnetic field 26 does not rotate in the outer peripheral direction of the cylindrical target 12 due to the rotation of the inclined cylindrical magnet 22, the same operation as that of the first embodiment can be achieved, and Progresses uniformly over the entire outer periphery of the target 12. Therefore, as in the case of the first embodiment, the film formation speed when forming a thin film on the substrate 16 is increased, the film characteristics of the thin film and the uniformity of the film thickness distribution are ensured, and the cylindrical target 12 is formed. As a result, it is possible to prevent the deterioration of the film quality and the reduction of the film forming speed due to the occurrence of arcing.

As described above, according to the coaxial magnetron sputtering apparatus according to the present embodiment, instead of rotating the inclined cylindrical magnet 22 as in the first embodiment, the cylindrical target 12 is moved to the center axis thereof. Rotate around,
By rotating the cylindrical substrate holder 14 on which the substrate 16 is mounted around its central axis in a direction opposite to the rotation direction of the cylindrical target 12, the time average of the intensity of the magnetic field 26 by the inclined cylindrical magnet 22 becomes cylindrical. Since the entire surface of the target 12 becomes uniform, the plasma density generated by the glow discharge is increased and the time average of the plasma density is reduced as in the case of the first embodiment. It becomes uniform over the entire outer circumference.
Therefore, the same effect as in the case of the coaxial magnetron sputtering apparatus according to the first embodiment can be obtained.

Here, the cylindrical target 12 and the cylindrical substrate holder 14 on which the substrate 16 is mounted are rotated in opposite directions, but may be rotated in the same direction. However, in order to relatively move the region to be sputtered on the outer peripheral surface of the cylindrical target 12 with respect to the substrate 16, it is desirable that the two have different rotational angular velocities.

(Third Embodiment) A coaxial magnetron sputtering apparatus according to a third embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG. Here, FIG. 6 is an enlarged view of a main part of the coaxial magnetron sputtering apparatus according to the present embodiment, and FIG. 7 is a plan view of a main part of the coaxial magnetron sputtering apparatus shown in FIG. The same components as those of the coaxial magnetron sputtering device shown in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof is omitted. The coaxial magnetron sputtering apparatus according to the present embodiment corresponds to claim 3.

The overall configuration of the coaxial magnetron sputtering apparatus according to the present embodiment is substantially the same as the coaxial magnetron sputtering apparatus according to the first embodiment. That is, a cylindrical target 12 is provided at a central portion in the vacuum chamber 10, and a cylindrical substrate holder 14 for mounting a substrate 16 on the outer periphery of the cylindrical target 12 is provided around the cylindrical target 12. It is arranged coaxially with the cylindrical target 12. The cylindrical target 12 and the cylindrical substrate holder 14 are connected to a power supply 18 for applying a predetermined voltage between the two.

However, in the case of the first embodiment, one inclined cylindrical magnet 22 is mounted coaxially with the cylindrical target 12 on the outer periphery of the support cylinder 20 installed inside the cylindrical target 12. In the coaxial magnetron sputtering apparatus according to this embodiment, a plurality of inclined cylindrical magnets 22a, 22b,..., 22f arranged on the outer periphery of the support cylinder 20 in the direction of the central axis thereof are coaxial with the cylindrical target 12. The feature is that it is attached to. And
These plurality of inclined cylindrical magnets 22a, 22b,.
The N-pole surface and the S-pole surface of 2f are each inclined with respect to the central axis. Further, the S magnetic pole surface of the inclined cylindrical magnet 22a and the S magnetic pole surface of the inclined cylindrical magnet 22b,
The same magnetic pole faces are arranged adjacent to each other, such as the N magnetic pole face of 2b and the N magnetic pole face of the inclined cylindrical magnet 22c.

As in the case of the first embodiment, a plurality of inclined cylindrical magnets 22 are
A rotating mechanism (not shown) for rotating a, 22b,..., 22f around its central axis is provided.

Next, the operation of the coaxial magnetron sputtering apparatus shown in FIGS. 6 and 7 will be described. As in the case of the first embodiment, after a predetermined discharge gas is introduced into the vacuum in the vacuum chamber 10, a predetermined power is supplied between the cylindrical target 12 and the cylindrical substrate holder 14 by the power supply 18. By applying a voltage to generate glow discharge, the discharge gas on the outer periphery of the cylindrical target 12 is turned into plasma. At this time, unlike the case of the first embodiment,
As shown by arrows in FIG. 6, a plurality of inclined cylindrical magnets 22a, 22b,
, 22f, the magnetic field lines 26a, 26b,.
26f are formed in an annular shape, and the N-pole surface and the S-pole surface of each of these inclined cylindrical magnets 22a, 22b,.
6a, 26b,..., 26f are distributed in an inclined annular shape, respectively.

In the same manner as in the first embodiment, as shown by arrows in FIGS. 6 and 7, a plurality of inclined cylindrical magnets 22a, 22b,. By rotating around the central axis, the magnetic field 2
Each of 6a, 26b,..., 26f also rotates in the outer peripheral direction of the cylindrical target 12, and has uniform strength over the entire outer periphery of the cylindrical target 12. For this reason, the electrons in the plasma generated by the glow discharge cause these magnetic fields 26
af, 26b,..., 26f, the flight distance is extended by performing a drift motion, so that a large number of discharge gas molecules are ionized by one electron, and the discharge gas is turned into a high-density plasma. At the same time, the time average of the densified plasma density becomes uniform over the entire outer periphery of the cylindrical target 12.

The plurality of inclined cylindrical magnets 22a, 22a,
2b,..., 22f, the magnetic field 2 near the N pole face and the S pole face
In the curved portions of the lines of magnetic force of 6a, 26b,..., 26f, Lorentz force acts on the drifting electrons to push the electrons back to the respective central portions of the magnetic fields 26a, 26b,. The high-density plasma region is further increased than in the case of the first embodiment. As a result,
Higher-speed sputtering than in the first embodiment proceeds uniformly over the entire outer periphery of the cylindrical target 12.

Accordingly, the film forming speed when forming a thin film on the substrate 16 is higher than in the first embodiment, and the film characteristics of the thin film are similar to those in the first embodiment. And uniformity of film thickness distribution, cylindrical target 1
As a result, it is possible to prevent the deterioration of the film quality and the reduction of the film formation speed due to the occurrence of arcing.

As described above, according to the coaxial magnetron sputtering apparatus of the present embodiment, instead of rotating one inclined cylindrical magnet 22 as in the case of the first embodiment, the direction of the central axis is changed. By rotating a plurality of inclined cylindrical magnets 22a, 22b,.
The magnetic field 26a, 26b,..., 26f of the plurality of inclined cylindrical magnets 22a, 22b,. Since the plasma density becomes uniform, the density of the plasma generated by the glow discharge is increased more than in the case of the first embodiment, and the time average of the plasma density is reduced as in the case of the first embodiment. The target becomes uniform over the entire outer periphery.

Therefore, the same effects as those of the coaxial magnetron sputtering apparatus according to the first embodiment can be obtained, and the thin film can be formed on the substrate 16 by further increasing the high-density plasma region. Can be made faster than in the case of the coaxial magnetron sputtering apparatus according to the first embodiment.

Here, in the coaxial magnetron sputtering apparatus according to the first embodiment, one inclined cylindrical magnet 22 is replaced with a plurality of inclined cylindrical magnets 22a, 22a.
b,..., 22f have been described,
One inclined cylindrical magnet 22 in the coaxial magnetron sputtering apparatus according to the second embodiment may be replaced with a plurality of inclined cylindrical magnets 22a, 22b,..., 22f. In this case, the same effect can be obtained.

(Fourth Embodiment) FIG. 8 shows a coaxial magnetron sputtering apparatus according to a fourth embodiment of the present invention.
This will be described with reference to FIG. Here, FIG. 8 is a plan view showing a main part of the coaxial magnetron sputtering apparatus according to the present embodiment. The same components as those of the coaxial magnetron sputtering device shown in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof is omitted. Further, the coaxial magnetron sputtering apparatus according to the present embodiment corresponds to claim 4.

The overall configuration of the coaxial magnetron sputtering apparatus according to this embodiment is substantially the same as that of the coaxial magnetron sputtering apparatus according to the first embodiment. That is, a cylindrical target 12 is provided at a central portion in the vacuum chamber 10, and a cylindrical substrate holder 14 for mounting a substrate 16 on the outer periphery of the cylindrical target 12 is provided around the cylindrical target 12. It is arranged coaxially with the cylindrical target 12.

The cylindrical target 12 and the cylindrical substrate holder 14 are connected to a power supply 18 for applying a predetermined voltage between the two. Further, inside the cylindrical target 12, a support cylinder 20 and an inclined cylindrical magnet 22 are coaxially arranged. Then, the inclined cylindrical magnet 22 is rotated around its central axis by a rotation mechanism (not shown).

However, in the coaxial magnetron sputtering apparatus according to the present embodiment, the shield plate 28 is disposed between the cylindrical target 12 and the cylindrical substrate holder 14 so that the sputtered particles emitted from the cylindrical target 12 fly. The feature is that the range is limited.

Next, the operation of the coaxial magnetron sputtering apparatus shown in FIG. 8 will be described. As in the case of the first embodiment, after a predetermined discharge gas is introduced into the vacuum in the vacuum chamber 10, a predetermined power is supplied between the cylindrical target 12 and the cylindrical substrate holder 14 by the power supply 18. By applying a voltage to generate glow discharge, the discharge gas on the outer periphery of the cylindrical target 12 is turned into plasma.

On the outer peripheral surface side of the cylindrical target 12, a magnetic field 26 in the central axis direction of the inclined cylindrical magnet 22 is distributed in an inclined annular shape, and the inclined cylindrical magnet 22
As a result, the magnetic field 26 also rotates in the outer peripheral direction of the cylindrical target 12, and has a uniform strength over the entire outer periphery of the cylindrical target 12. For this reason, the discharge gas is converted into plasma at high density, and the time average of the plasma density at high density becomes uniform over the entire outer periphery of the cylindrical target 12. As a result, high-speed sputtering proceeds uniformly over the entire outer periphery of the cylindrical target 12.

At this time, the sputtered particles emitted from the entire outer periphery of the cylindrical target 12 are deposited on the cylindrical substrate holder 1.
4, the flight range of the sputtered particles is limited because the shield plate 28 is arranged on the way to the substrate 16 mounted on the substrate 4. That is, the cylindrical target 12
Of the sputtered particles emitted from the entire outer periphery toward the substrate 16, the component in the direction perpendicular to the surface of the substrate 16 increases. For this reason, for example, when performing reactive sputtering or alloy sputtering, it is possible to control the film composition and the crystal growth direction after the reaction, and the uniformity of the film characteristics is improved.

Accordingly, as in the case of the first embodiment, when the thin film is formed on the substrate 16, the film forming speed is increased, the use efficiency of the cylindrical target 12 is improved, and the service life is extended. It is possible to prevent the deterioration of the film quality and the reduction of the film forming rate due to the occurrence of arcing, and to improve the film characteristics and the uniformity of the film thickness distribution of the thin film more than in the first embodiment.

As described above, according to the coaxial magnetron sputtering apparatus according to the present embodiment, the shield plate is provided between the cylindrical target 12 and the cylindrical substrate holder 14 in the coaxial magnetron sputtering apparatus according to the first embodiment. 28 are arranged to limit the flight range of the sputtered particles emitted from the cylindrical target 12, so that the same effect as in the case of the coaxial magnetron sputtering apparatus according to the first embodiment can be obtained, and 1
Since the component in the direction perpendicular to the surface of the substrate 16 in the sputtered particles toward the substrate 6 is increased, the film thickness of the thin film formed on the substrate 16 is greater than in the case of the coaxial magnetron sputtering apparatus according to the first embodiment. The uniformity of characteristics and film thickness distribution can be improved.

Here, the case where the shield plate 28 is disposed in the coaxial magnetron sputtering apparatus according to the first embodiment has been described. However, in the coaxial magnetron sputtering apparatus according to the second or third embodiment, A shield plate 28 may be provided. In this case, the same effect can be obtained.

(Fifth Embodiment) A coaxial magnetron sputtering apparatus according to a fifth embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG. Here, FIG. 9 is a plan view showing a coaxial magnetron sputtering apparatus according to the present embodiment, and FIG. 10 is a sectional view of a main part of the coaxial magnetron sputtering apparatus shown in FIG. The same components as those of the coaxial magnetron sputtering device shown in FIGS. 1 to 3 are denoted by the same reference numerals, and description thereof is omitted. The coaxial magnetron sputtering apparatus according to the present embodiment corresponds to claim 5.

The inside of the vacuum chamber 10 is
0 and a sample storage chamber 32. In substantially the same manner as in the coaxial magnetron sputtering apparatus according to the first embodiment, a cylindrical target 12 is provided at the center of the sputtering chamber 30, and a support cylinder 20 is provided inside the cylindrical target 12. An inclined cylindrical magnet 22 attached to the outer periphery is arranged coaxially with the cylindrical target 12, and the N-pole surface and the S-pole surface of the inclined cylindrical magnet 22 are inclined with respect to the central axis. Further, yokes 24 are provided on the N-pole surface and the S-pole surface of the inclined cylindrical magnet 22. Further, a rotation mechanism for rotating the inclined cylindrical magnet 22 around its central axis via the support cylinder 20 is provided.

However, in the case of the first embodiment, the cylindrical substrate holder 14 for mounting the substrate 16 is disposed coaxially around the cylindrical target 12 so as to face the outer peripheral surface of the cylindrical target 12. In the coaxial magnetron sputtering apparatus according to the present embodiment, instead of the cylindrical substrate holder 14 on which the substrate 16 is mounted, a long film substrate 34 is attached to the cylindrical target 12 while facing the outer peripheral surface of the cylindrical target 12. It is characterized in that a film substrate traveling mechanism for traveling around a substantially circumference is provided.

The film substrate traveling mechanism is provided in the sample accommodating chamber 32 and has a delivery roller 36 for delivering the film substrate 34, and a film substrate 34 provided in the sputtering chamber 30 and delivered from the delivery roller 36. And a take-up roller 40 installed in the sample storage chamber 32 and winding up the film substrate 34 traveling around the cylindrical target 12. It is composed of Further, inside the plurality of guide rollers 38, a deposition preventing plate 42 for preventing sputter particles from the cylindrical target 12 from adhering to the plurality of guide rollers 38.
Is arranged.

Next, the operation of the coaxial magnetron sputtering apparatus shown in FIGS. 9 and 10 will be described. Vacuum chamber 10
After a predetermined discharge gas is introduced into the vacuum of the sputtering processing chamber 30 inside, a glow discharge is generated,
The discharge gas on the outer periphery of the cylindrical target 12 is turned into plasma.

In the same manner as in the first embodiment, the magnetic field 26 in the central axis direction of the inclined cylindrical magnet 22 is provided on the outer peripheral surface side of the cylindrical target 12 as shown by an arrow in FIG. Are distributed in an inclined annular shape, and the rotation of the inclined cylindrical magnet 22 causes the magnetic field 26 to also rotate in the outer peripheral direction of the cylindrical target 12.
The strength becomes uniform over the entire outer periphery. For this reason, the discharge gas is converted into plasma at high density, and the time average of the plasma density at high density becomes uniform over the entire outer periphery of the cylindrical target 12. As a result, high-speed sputtering proceeds uniformly over the entire outer periphery of the cylindrical target 12.

Accordingly, a thin film is formed at a high speed on the film substrate 34 which is sent out from the sending roller 36 and travels substantially on the circumference of the cylindrical target 12 while being guided by the plurality of guide rollers 38. At the same time, uniformity of the film characteristics and the film thickness distribution of the thin film is ensured. Also,
The utilization efficiency of the cylindrical target 12 is improved, and the service life thereof is extended. Further, the deterioration of the film quality and the reduction of the film forming speed due to the occurrence of arcing during the reactive DC sputtering are prevented.

As described above, according to the coaxial magnetron sputtering apparatus according to the present embodiment, the substrate 1 mounted on the cylindrical substrate holder 14 as in the first embodiment described above.
Instead of forming on the film 6, the film is formed on the film substrate 34 running on a substantially circumference around the cylindrical target 12, the same as the case of the coaxial magnetron sputtering apparatus according to the first embodiment. A similar effect, namely the film substrate 34
To increase the deposition rate when forming a thin film thereon, to extend the service life by improving the utilization efficiency of the cylindrical target 12, and to prevent the degradation of the film quality and the deposition rate due to the occurrence of arcing. Can be.

Here, the case where the cylindrical substrate holder 14 on which the substrate 16 is mounted in the coaxial magnetron sputtering apparatus according to the first embodiment has been replaced with a film substrate traveling mechanism for traveling the film substrate 34 has been described. Is the cylindrical substrate holder 1 in the coaxial magnetron sputtering apparatus according to the second to fourth embodiments.
4 may be replaced with a film substrate traveling mechanism. In this case, the same effect can be obtained.

(Sixth Embodiment) A coaxial magnetron sputtering apparatus according to a sixth embodiment of the present invention will be described with reference to FIG.
1 will be described. Here, FIG. 11 is a plan view showing a coaxial magnetron sputtering apparatus according to the present embodiment.
The same components as those of the coaxial magnetron sputtering device shown in FIG. 10 are denoted by the same reference numerals, and description thereof will be omitted. The coaxial magnetron sputtering apparatus according to the present embodiment corresponds to claim 6.

The overall configuration of the coaxial magnetron sputtering apparatus according to the present embodiment is substantially the same as the coaxial magnetron sputtering apparatus according to the fifth embodiment. That is, the cylindrical target 12 is installed at the center of the sputtering chamber 30 in the vacuum chamber 10, and inside the cylindrical target 12, an inclined cylindrical magnet 22 attached to the outer periphery of the support cylinder 20 is provided. The N-pole surface and the S-pole surface of the inclined cylindrical magnet 22 are inclined with respect to the central axis. And the support cylinder 20
And a rotation mechanism for rotating the inclined cylindrical magnet 22 around its central axis via a rotary shaft.

Further, the long film substrate 34 faces the outer peripheral surface of the cylindrical target 12 while
A film substrate traveling mechanism that travels on a substantially circumference around the
That is, a delivery roller 36 for delivering the film substrate 34,
A plurality of guide rollers 38 for guiding the film substrate 34 on substantially the circumference of the cylindrical target 12 and a winding roller 40 for winding the film substrate 34 are provided.
However, in the coaxial magnetron sputtering apparatus according to the present embodiment, a positive voltage is applied to the cylindrical target 12 between the cylindrical target 12 and the film substrate 34 running on substantially the circumference of the target. It is characterized in that a mesh-shaped auxiliary electrode 44 is disposed.

Next, the operation of the coaxial magnetron sputtering apparatus shown in FIG. 11 will be described. As in the case of the fifth embodiment, after a predetermined discharge gas is introduced into the vacuum of the sputtering chamber 30 in the vacuum chamber 10, a glow discharge is generated, whereby the cylindrical target 12 is formed.
The discharge gas on the outer periphery is turned into plasma. On the outer peripheral surface side of the cylindrical target 12, a magnetic field 26 in the central axis direction by the inclined cylindrical magnet 22 is distributed in an inclined annular shape.
Due to the rotation of the inclined cylindrical magnet 22, the magnetic field 26 also rotates in the outer peripheral direction of the cylindrical target 12, and has a uniform strength over the entire outer periphery of the cylindrical target 12. For this reason, the discharge gas is converted into plasma at high density, and the time average of the plasma density at high density becomes uniform over the entire outer periphery of the cylindrical target 12. As a result, high-speed sputtering proceeds uniformly over the entire outer periphery of the cylindrical target 12.

At this time, sputter particles emitted from the entire outer periphery of the cylindrical target 12
The film-like auxiliary electrode 44 to which a positive voltage is applied with respect to the cylindrical target 12 is disposed in the middle of the film substrate 34 traveling substantially on the circumference of the circle. The discharge is maintained by the electric field between the auxiliary electrode 44 and the cylindrical target 12. For this reason, even if the magnetic field 26 rotates in the outer peripheral direction of the cylindrical target 12 with the rotation of the inclined cylindrical magnet 22, even if the film substrate 34 runs on substantially the circumference of the cylindrical target 12, Plasma can be stably generated and maintained. The positive potential sputtered particles emitted from the entire outer periphery of the cylindrical target 12 are supplied to the mesh-like auxiliary electrode 44.
And stably goes to the film substrate 34.

Therefore, as in the case of the fifth embodiment, the film forming speed for forming a thin film on the film substrate 34 is increased, the service life is extended by improving the use efficiency of the cylindrical target 12, and the like. In addition, the deterioration of the film quality and the reduction of the film formation speed due to the occurrence of arcing can be prevented, and the film characteristics and the uniformity of the film thickness distribution of the thin film are improved more than in the fifth embodiment.

As described above, according to the coaxial magnetron sputtering apparatus according to the present embodiment, a mesh-like auxiliary electrode is provided between the cylindrical target 12 and the film substrate 34 in the coaxial magnetron sputtering apparatus according to the fifth embodiment. The plasma generated on the entire outer periphery of the cylindrical target 12 is stably maintained by maintaining the discharge by the electric field between the mesh-like auxiliary electrode 44 and the cylindrical target 12. The same effect as that of the coaxial magnetron sputtering apparatus according to the fifth embodiment can be obtained, and a thin film formed on the film substrate 34 can be obtained more than the case of the coaxial magnetron sputtering apparatus according to the fifth embodiment. The uniformity of characteristics and film thickness distribution can be improved.

Here, the net-like auxiliary electrode 44 is arranged between the cylindrical target 12 and the film substrate 34, but the auxiliary electrode may have any shape suitable for passing sputtered particles. I just need. For example, FIG.
As shown in (2), a plurality of rod-shaped auxiliary electrodes 46 may be arranged at regular intervals. In this case, the same effect can be obtained.

Here, the coaxial magnetron sputtering apparatus according to the fifth embodiment is connected to a net-like auxiliary electrode 44.
Has been described, but the above-described second to fourth
A net-like auxiliary electrode 44 or a rod-like auxiliary electrode 46 may be arranged in the coaxial magnetron sputtering apparatus according to the embodiment. In this case, the same effect can be obtained.

[0085]

As described above, according to the sputtering apparatus of the present invention, the following effects can be obtained. That is, according to the sputtering apparatus of the first aspect, the inclined cylindrical magnet whose magnetic pole surface is inclined with respect to the central axis is coaxially arranged inside the cylindrical target, and rotates around the central axis. That is, as a magnetic field orthogonal to the electric field generated between the substrate and the cylindrical target,
By using an inclined toroidal magnetic field that rotates in the outer peripheral direction of the cylindrical target instead of the conventional fixed magnetic field, the intensity of the magnetic field becomes uniform over the entire outer surface of the cylindrical target. The resulting plasma density is increased, and the time average of the plasma density becomes uniform over the entire outer surface of the cylindrical target.

Accordingly, the high-speed sputtering proceeds uniformly over the entire outer periphery of the cylindrical target, so that the film forming speed when forming a thin film on the substrate can be increased, and the region to be sputtered on the outer peripheral surface of the cylindrical target is reduced. Since the film moves relatively to the substrate, uniformity of film characteristics and film thickness distribution of the thin film can be secured. In addition, since the consumption of the cylindrical target progresses uniformly over the entire outer periphery, the use efficiency of the cylindrical target can be improved and the service life thereof can be extended.
Furthermore, since the insulator is cleaned over the entire outer periphery of the cylindrical target, when performing reactive DC sputtering, deterioration of the film quality due to the occurrence of arcing due to the deposition of the insulator in a specific region and the reduction of the film formation rate are performed. This prevents a decrease and enables a stable film formation.

According to the sputtering apparatus of the second aspect, in the sputtering apparatus of the first aspect, the cylindrical target is replaced with a cylindrical target instead of the rotating mechanism for rotating the inclined cylindrical magnet around the central axis. By having a rotation mechanism for rotating around the central axis and a rotation mechanism for rotating the substrate holder around the central axis, the cylindrical substrate holder on which the cylindrical target and the substrate are mounted can be mounted even if the inclined cylindrical magnet does not rotate. Rotates, the intensity of the magnetic field becomes uniform over the entire outer periphery of the cylindrical target, the density of the plasma generated by the glow discharge is increased, and the time average of the plasma density is reduced. Become uniform over the entire surface. Therefore, the same effect as in the case of the sputtering apparatus according to claim 1 can be obtained.

According to the sputtering apparatus of claim 3, in the sputtering apparatus of claim 1 or 2,
By arranging a plurality of inclined cylindrical magnets in the direction of the central axis, the region where the magnetic field strength is high increases, so that the plasma density generated by the glow discharge is further increased, and The rotation of the inclined cylindrical magnet makes the time average of the plasma density uniform over the entire outer periphery of the cylindrical target. Therefore, the same effect as in the case of the sputtering apparatus according to claim 1 or 2 can be obtained, and the film formation speed when forming a thin film on the substrate can be further increased.

According to a fourth aspect of the present invention, in the sputtering apparatus according to any one of the first to third aspects, the sputter emitted from the cylindrical target is provided between the cylindrical target and the substrate holder. According to any one of claims 1 to 3, since the shield plate that limits the flight range of the particles is arranged, among the sputter particles toward the substrate, a component in a direction perpendicular to the substrate surface increases. The same effect as in the case of the sputtering apparatus can be obtained, and the uniformity of the film characteristics and the film thickness distribution of the thin film formed on the substrate can be further improved.

According to a fifth aspect of the present invention, in the sputtering apparatus according to any one of the first to fourth aspects, a substantially circumferential area around the cylindrical target is used instead of the substrate holder for mounting the substrate. 5. The method according to claim 1, further comprising a film substrate traveling unit configured to move the film substrate in opposition to the outer periphery of the cylindrical target, so that the film formation target is replaced with a long film substrate from the substrate. The same effect as in the case of the sputtering apparatus according to the above, that is, an increase in the deposition rate when forming a thin film on a film substrate, an increase in the service life by improving the utilization efficiency of the cylindrical target,
Further, it is possible to prevent the film quality from being deteriorated and the film forming speed from being lowered due to the occurrence of arcing.

According to the sputtering apparatus of claim 6, in the sputtering apparatus of any one of claims 1 to 5, a positive potential is provided between the cylindrical target and the substrate holder with respect to the cylindrical target. The discharge is maintained by the electric field between the auxiliary electrode and the cylindrical target, and the plasma generated on the entire outer periphery of the cylindrical target is stably maintained by disposing the auxiliary electrode capable of passing the sputtered particles. Therefore, the same effects as in the case of the sputtering apparatus according to any one of claims 1 to 5 can be obtained, and the film characteristics and uniformity of the film thickness distribution of the thin film can be further improved.

The sputtering apparatus according to any one of claims 1 to 6 can form a thin film having uniform film characteristics and film thickness at a high speed. This is particularly effective when a thin film needs to be formed. In addition, since a film can be formed with high material utilization efficiency, it is extremely effective for thinning an expensive material.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a coaxial magnetron sputtering apparatus according to a first embodiment of the present invention.

FIG. 2 is an enlarged view of a main part of the coaxial magnetron sputtering apparatus shown in FIG.

FIG. 3 is a plan view of a main part of the coaxial magnetron sputtering apparatus shown in FIG.

FIG. 4 is an enlarged view of a main part showing a coaxial magnetron sputtering apparatus according to a second embodiment of the present invention.

5 is a plan view of a main part of the coaxial magnetron sputtering device shown in FIG.

FIG. 6 is an enlarged view of a main part showing a coaxial magnetron sputtering apparatus according to a third embodiment of the present invention.

7 is a plan view of a main part of the coaxial magnetron sputtering device shown in FIG.

FIG. 8 is a plan view illustrating a main part of a coaxial magnetron sputtering apparatus according to a fourth embodiment of the present invention.

FIG. 9 is a plan view showing a coaxial magnetron sputtering apparatus according to a fifth embodiment of the present invention.

FIG. 10 is a sectional view of a main part of the coaxial magnetron sputtering apparatus shown in FIG.

FIG. 11 is a plan view showing a coaxial magnetron sputtering apparatus according to a fifth embodiment of the present invention.

FIG. 12 is a plan view showing a coaxial magnetron sputtering apparatus according to a modification of the fifth embodiment of the present invention.

FIG. 13 is a schematic sectional view showing a conventional coaxial magnetron sputtering apparatus.

14 is an enlarged view of a main part of the coaxial magnetron sputtering device shown in FIG.

FIG. 15 is a view for explaining the operation of the main part of the coaxial magnetron sputtering apparatus shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Vacuum tank 12 Cylindrical target 14 Cylindrical substrate holder 16 Substrate 18 Power supply 20 Support cylinder 22, 22a, 22b, ..., 22f Inclined cylindrical magnet 24 Yoke 26, 26a, 26b, ..., 26f Magnetic field 28 Shield plate 30 Sputtering process Chamber 32 Sample storage chamber 34 Film substrate 36 Delivery roller 38 Guide roller 40 Winding roller 42 Deposition plate 44 Mesh-shaped auxiliary electrode 46 Rod-shaped auxiliary electrode 50 Vacuum tank 52 Cylindrical target 54 Cylindrical substrate holder 56 Power supply 58 Support Cylinder 60 Cylindrical permanent magnet 62 Cooling water inlet 64 Cooling water outlet 66 Magnetic field

Claims (6)

[Claims] 1. A cylindrical target which is installed in a vacuum chamber and emits sputtered particles made of a thin film material by collision of ions in plasma, and is disposed around the cylindrical target and faces an outer peripheral surface of the cylindrical target. A substrate holder for mounting a substrate thereon, an inclined cylindrical magnet arranged inside the cylindrical target so as to have the same central axis, and a magnetic pole surface inclined with respect to the central axis; A rotating mechanism for rotating the spherical magnet about the central axis. 2. The sputtering apparatus according to claim 1, wherein a rotating mechanism for rotating the cylindrical target about the central axis is used instead of a rotating mechanism for rotating the inclined cylindrical magnet about the central axis. A sputter apparatus comprising a rotating mechanism for rotating the substrate holder around the central axis. 3. The sputtering apparatus according to claim 1, wherein a plurality of said inclined cylindrical magnets are arranged in a direction of said central axis. 4. The shield according to claim 1, wherein a flight range of sputter particles emitted from the cylindrical target is limited between the cylindrical target and the substrate holder. A sputtering apparatus, wherein a plate is arranged. 5. The sputtering apparatus according to claim 1, wherein the outer periphery of the cylindrical target is provided on substantially the circumference of the cylindrical target instead of the substrate holder on which the substrate is mounted. A sputter device having a film substrate traveling portion for traveling the film substrate in opposition to the film substrate. 6. The sputtering device according to claim 1, wherein an auxiliary electrode to which a positive potential is applied to the cylindrical target is disposed between the cylindrical target and the substrate holder. A sputtering apparatus characterized in that the sputtering is performed.