JPS63227770A - Ion plating device - Google Patents
Ion plating deviceInfo
- Publication number
- JPS63227770A JPS63227770A JP6149887A JP6149887A JPS63227770A JP S63227770 A JPS63227770 A JP S63227770A JP 6149887 A JP6149887 A JP 6149887A JP 6149887 A JP6149887 A JP 6149887A JP S63227770 A JPS63227770 A JP S63227770A
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- filament
- workpiece
- current
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007733 ion plating Methods 0.000 title claims description 7
- 238000001704 evaporation Methods 0.000 claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims abstract description 12
- 230000005684 electric field Effects 0.000 claims abstract 2
- 230000008020 evaporation Effects 0.000 claims description 16
- 238000010891 electric arc Methods 0.000 abstract description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 4
- 238000006386 neutralization reaction Methods 0.000 abstract 1
- 230000003472 neutralizing effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 10
- 230000001133 acceleration Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005422 blasting Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はイオンプレーテイング装置にかｓ９、特に導
体または半導体上に絶縁被膜を形成したり、絶縁体上に
導体または半導体の被膜を形成するための装置に関する
。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to an ion plating apparatus, particularly for forming an insulating film on a conductor or semiconductor, or forming a conductor or semiconductor film on an insulator. Relating to a device for
古くから実施されている真空蒸着技術では、被加工物表
面に到達する蒸気が殆ど運動エネルギを持っていないた
めに、蒸着層の付着強度や組織に問題がある。これを改
善するために開発されたイオンブレーティング技術では
、蒸気をイオン化した上で加速して被加工物表面に到達
させるために、蒸着層の付着強度や組織は大幅に改善さ
れる。In the vacuum evaporation technology that has been practiced for a long time, the vapor that reaches the surface of the workpiece has almost no kinetic energy, so there are problems with the adhesion strength and structure of the evaporated layer. Ion blating technology, developed to improve this problem, ionizes and accelerates the vapor to reach the surface of the workpiece, thereby significantly improving the adhesion strength and texture of the vapor deposited layer.
この種のイオンプレーティング装置の中で、最も蒸気の
イオン化率が高く、優れた被膜を形成できるものは、実
公昭５９−４０４５号公報に示されている装置である。Among this type of ion plating apparatus, the apparatus shown in Japanese Utility Model Publication No. 59-4045 has the highest rate of vapor ionization and can form an excellent film.
これは、蒸発源に接近してイオン化電極と熱電子放射用
フィラメントとが設けられておシ、フィラメントが放射
した熱電子の助けを借シながら、蒸発源とイオン化電極
との間で蒸気を通してのアーク放電を起こさせ、これに
よって蒸気の８０％以上をイオン化することができるも
のである〇
〔発明が解決しようとする問題点〕
導体または半導体上にイオンプレーテイングによって絶
縁被膜を形成する場合、組織が緻密で耐着強度が高い被
膜を得ることができるが、その反面に、絶縁被膜の表面
の電荷蓄積が増大し、絶縁被膜を通して放電して放電痕
を作る。同様に、絶縁性の基板上に導電性の被膜を形成
する場合にも、導電性被膜に多量の電荷が蓄積し、絶縁
性基板を通して放電が起シ、基板の絶縁特性を損なう。In this method, an ionizing electrode and a filament for emitting thermionic electrons are provided close to the evaporation source, and vapor is passed between the evaporation source and the ionizing electrode with the help of thermionic electrons emitted by the filament. It causes an arc discharge, which can ionize more than 80% of the vapor. [Problem to be solved by the invention] When forming an insulating film on a conductor or semiconductor by ion plating, the structure Although it is possible to obtain a film that is dense and has high adhesion resistance, on the other hand, charge accumulation on the surface of the insulating film increases and discharge occurs through the insulating film, creating discharge marks. Similarly, when a conductive film is formed on an insulating substrate, a large amount of charge accumulates in the conductive film, and discharge occurs through the insulating substrate, impairing the insulation properties of the substrate.
このような被加工物における電荷の蓄積の問題は、前記
実公昭５９−４０４５号公報に示されている装置のよう
に、蒸気のイオン化率が高いもの程増大する。This problem of charge accumulation in the workpiece increases as the ionization rate of steam increases, as in the apparatus shown in the above-mentioned Japanese Utility Model Publication No. 59-4045.
この発明は、イオンブレーティング装置において、蒸気
イオンが被加工物へ向う径路中またはその近傍に、熱電
子放射フィラメントを設けたことを特徴とする。The present invention is characterized in that, in an ion brating apparatus, a thermionic emission filament is provided in or near the path of vapor ions toward a workpiece.
この熱電子放射フィラメントは、蒸発源やイオン化のた
めの電極等の近傍ではなく、蒸気イオンが十分に運動エ
ネルギを取得した位置に設けなければならない。即ち、
被加工物に加速電位が与えられる場合には、比較的に被
加工物に近い位置に設け、蒸気径路の途中に加速電極が
存在する場合には、加速電極附近に設けることが望まし
い〇また、熱電子放射フィラメントは、イオンの衝撃に
耐えることが必要であシ、かつ蒸発物が付着しないこと
が必要であるから、高温のタングステンフィラメントを
用いることが望ましい。This thermionic emission filament must be provided at a location where vapor ions have acquired sufficient kinetic energy, rather than near an evaporation source or an ionization electrode. That is,
When an accelerating potential is applied to the workpiece, it is desirable to install it at a position relatively close to the workpiece, and when there is an accelerating electrode in the middle of the steam path, it is desirable to install it near the accelerating electrode. It is desirable to use a high temperature tungsten filament because the thermionic emitting filament must be able to withstand ion bombardment and must not be evaporated.
蒸発源から蒸発し、イオン化電極によってイオン化され
た蒸気は、加速電位によって加速されてから、熱電子放
射フィラメントが放射する熱電子によって中和され、運
動エネルギは十分保有するが電荷は殆ど持たない状態で
、被加工物に到達する。その結果、被加工物に形成され
る被膜は、蒸気が大きな運動エネルギを持って衝突して
作られたものであるために、従来のイオンブレーティン
グによる被膜に匹敵し得る付着強度や緻密な組織を持つ
に至るが、電荷の蓄積は殆ど起こらない。The vapor evaporated from the evaporation source and ionized by the ionization electrode is accelerated by the accelerating potential and then neutralized by thermionic electrons emitted by the thermionic emission filament, resulting in a state in which it has sufficient kinetic energy but almost no electric charge. and reaches the workpiece. As a result, the film formed on the workpiece is created by colliding steam with high kinetic energy, so it has an adhesion strength and a dense structure comparable to that of a film produced by conventional ion blasting. However, almost no charge accumulation occurs.
そのために、絶縁被膜を形成する場合には放電痕が出来
ず、絶縁物上に被膜を形成する場合には絶縁物に絶縁破
壊が起こらない。Therefore, when forming an insulating film, no discharge marks are created, and when forming a film on an insulating material, no dielectric breakdown occurs in the insulating material.
第１図において、１は真空槽で、槽内の下部には蒸発源
２とこれに電子ビームを照射する電子銃３とが置かれ、
上部には円板状の被加工物４が支持されている。蒸発源
２から被加工物４へ向う蒸気径路の何方で、蒸発源２に
接近した位置には、熱電子放射用タングステン・フィラ
メント５及びイオン化電極６が配置されている。また、
蒸発源２と被加工物４との大略中間位置には、前記蒸気
径路を囲んで環状の加速電極７が配置され、かつその近
傍にはこの発明の特徴である熱電子放射用タングステン
・フィラメント８が設ケラれている〇なお、９はフィラ
メント５の加熱電源、１０はイオン化電極６のバイアス
電源、１１は加速電極７のバイアス電源、１２はフィラ
メント８の加熱電源、Ａは電流計である。また、真空槽
ｌは、真空ボングヘ向う排気路１３と雰囲気ガスを導入
するためのガス導入管路１４とを有している。In FIG. 1, 1 is a vacuum chamber, and at the bottom of the chamber there is placed an evaporation source 2 and an electron gun 3 that irradiates it with an electron beam.
A disk-shaped workpiece 4 is supported at the top. A tungsten filament 5 for thermionic emission and an ionization electrode 6 are arranged close to the evaporation source 2 on either side of the vapor path from the evaporation source 2 to the workpiece 4 . Also,
An annular accelerating electrode 7 is placed approximately midway between the evaporation source 2 and the workpiece 4, surrounding the vapor path, and near the accelerating electrode 7 is a tungsten filament 8 for thermionic emission, which is a feature of the present invention. In addition, 9 is a heating power source for the filament 5, 10 is a bias power source for the ionization electrode 6, 11 is a bias power source for the accelerating electrode 7, 12 is a heating power source for the filament 8, and A is an ammeter. Further, the vacuum chamber 1 has an exhaust path 13 leading to the vacuum bong and a gas introduction pipe 14 for introducing atmospheric gas.
上述の装置において、電子銃３が発した電子ビームの衝
突により、蒸発源２は蒸発し、その蒸気は、蒸発源２と
イオン化電極６との間に起る蒸気を通してのアーク放電
によって８０％以上の高い率でイオン化し、加速電極７
で加速されて被加工物４へ向かう。しかし、その加速さ
れた蒸気イオンは、フィラメント８が放射する多量の熱
電子によって中和されるけれども、加速によって得た速
度はそのまに維持する結果、高速で被加工物４に衝突し
て良好な被膜を作る。なお、フィラメント５は、蒸発源
２とイオン化電極６との間でアーク放電が起シにくい場
合に、これを助けるために使用するものである〇
上述の装置の各部の寸法は次の通シである。In the above-mentioned apparatus, the evaporation source 2 is evaporated by the collision of the electron beam emitted by the electron gun 3, and more than 80% of the vapor is evaporated by arc discharge through the vapor that occurs between the evaporation source 2 and the ionization electrode 6. The acceleration electrode 7 ionizes at a high rate of
is accelerated and heads toward the workpiece 4. However, although the accelerated vapor ions are neutralized by a large amount of thermionic electrons emitted by the filament 8, the velocity obtained by acceleration is maintained, and as a result, they collide with the workpiece 4 at high speed, resulting in a good result. Creates a film. The filament 5 is used to assist when arc discharge is difficult to occur between the evaporation source 2 and the ionization electrode 6. The dimensions of each part of the above device are as follows. be.
なお、フィラメント８は、直径Ｉｆｆ、長さ１０αのタ
ングステン棒である。Note that the filament 8 is a tungsten rod with a diameter Iff and a length 10α.
上述の装置において、蒸発源２としてチタンを用い、被
加工物４として直径１ｕｌｌの１８−８ステンレス鋼円
板を置き、真空槽１内を１０−”Ｐａ以下の高真空に排
気し、電子銃３を動作させて蒸発源２よシチタンを蒸発
させ、イオン化電極６に４０Ｖの正バイアスを加えてチ
タン蒸気をイオン化させた。In the above-mentioned apparatus, titanium is used as the evaporation source 2, an 18-8 stainless steel disk with a diameter of 1 µl is placed as the workpiece 4, the inside of the vacuum chamber 1 is evacuated to a high vacuum of 10-"Pa or less, and an electron gun is used. 3 was operated to evaporate titanium from the evaporation source 2, and a positive bias of 40 V was applied to the ionization electrode 6 to ionize the titanium vapor.
電子銃３の電子ビームを調節してイオン化電極６を流れ
る電流工１が１ＯＡになるようにし、加速電極７の電位
Ｅｅを一１０Ｑ Ｖに設定し、フィラメント８の加熱電
流工ｆを変化させたときのフィラメント８の電子放射電
流工ｅの変化状況は、第２図の如くであった。The electron beam of the electron gun 3 was adjusted so that the current flow 1 flowing through the ionization electrode 6 was 1OA, the potential Ee of the accelerating electrode 7 was set to -10QV, and the heating current f of the filament 8 was changed. The changes in the electron emission current e of the filament 8 at that time were as shown in FIG.
次に、フィラメント８の加熱電流工ｆを４ＯＡに固定し
、加速ｔｔｉ電位Ｅｅを変化させたときのフィラメント
８の電子放射電流工ｅの変化状況を、イオン化電極電流
工１が５Ａの場合とＩＯＡの場合について求めた結果は
、それぞれ第３図の曲線３１及び３２０通りであった。Next, the changes in the electron emission current e of the filament 8 when the heating current f of the filament 8 is fixed at 4OA and the acceleration tti potential Ee are changed are compared with those when the ionization electrode current 1 is 5A and the IOA The results obtained for the cases shown in FIG. 3 were 31 and 320 curves, respectively.
また、フィラメント８のｍ熱電流工ｆと被加工物４を流
れる電流工ｔとの関係を、イオン化電［６を流れる電流
工１がそれぞれ！５Ａ、ＩＯＡ及び１５Ａの場合につい
て求めた結果を、第４図に曲線４１．４２及び４３で示
す。In addition, the relationship between the m thermoelectric current f of the filament 8 and the current t flowing through the workpiece 4 is expressed as follows: ionization current [current 1 flowing through 6] respectively! The results obtained for the cases of 5A, IOA and 15A are shown in FIG. 4 by curves 41, 42 and 43.
更に、イオン化電極電流工１がＩＯＡ、加速電極電位Ｅ
（３が−ユＯＯｖのときの、フィラメント８の電子放射
電流工ｅと被加工物電流工ｔとの関係を第５図に示す。Furthermore, the ionization electrode current 1 is IOA, the acceleration electrode potential E
(FIG. 5 shows the relationship between the electron emission current e of the filament 8 and the workpiece current t when 3 is -YOOv.
上述の実験結果により、次の事項が証明された。The above experimental results proved the following.
（１）第２図より、フィラメント８の放射電流工ｅは周
知のように加熱電流工ｆの増大に伴って増大するので、
加熱電流工ｆによって調節することができる〇
（２）第３図より、加速電極７のバイアスＥｅを高めて
イオンのエネルギが増す程、またイオン化電ＦＭ６の電
流工１を増してイオンの量が増える程、フィラメント８
の放射電流工ｅが増大する。(1) From Fig. 2, the radiation current e of the filament 8 increases as the heating current f increases, as is well known.
It can be adjusted by the heating current factor f.〇(2) From Fig. 3, the more the bias Ee of the accelerating electrode 7 is raised to increase the energy of ions, the more the current factor 1 of the ionizing electric current FM6 is increased, the more the amount of ions is increased. The more it increases, the more filament 8
The radiation current e increases.
（３）第４図及び第５図よυ、被加工物４へ流入するイ
オンに起因する電流工ｔは、フィラメント８が放射する
熱電子電流工ｅが成る値のときに０になり、熱電子電流
工ｅが更に増大すると負値になる。被加工物電流工ｔを
０にするための熱電子放射電流工ｅの値は、イオン化電
極電流工１や加速電極電位Ｅｅによって変化するが、フ
ィラメント加熱電流工ｆを調節することによって被加工
物電流工ｔを０に調節するととができる。(3) As shown in Figs. 4 and 5, the electric current t caused by the ions flowing into the workpiece 4 becomes 0 when the thermionic current e emitted by the filament 8 becomes 0. If the electronic current factor e increases further, it becomes a negative value. The value of the thermionic emission current e to bring the workpiece current t to 0 varies depending on the ionization electrode current 1 and the accelerating electrode potential Ee, but by adjusting the filament heating current f, the workpiece By adjusting the electric current t to 0, it is possible to obtain .
上記実施例によって明らかなように、この発明によると
きは、熱電子放射フィラメントの加熱電流を調節するこ
とによシ、蒸気を腑速して被加工物面に衝突させるイオ
ンプレーティング本来の利益を享受しながら、形成され
る被膜における電荷の蓄積を防ぐことができる。よって
、放電痕を生ずることなく絶縁波膜を形成したシ、絶縁
板上に絶縁破壊を起こすことなく導電性被膜を形成した
りすることが可能であるため、高品質の被膜を得ること
ができる。As is clear from the above embodiments, according to the present invention, by adjusting the heating current of the thermionic emitting filament, the inherent benefit of ion plating in which vapor is made to collide with the surface of the workpiece can be achieved. It is possible to prevent charge accumulation in the formed film while enjoying the same effect. Therefore, it is possible to form an insulating wave film without causing discharge marks, and to form a conductive film on an insulating plate without causing dielectric breakdown, making it possible to obtain a high-quality film. .
【図面の簡単な説明】
第１図はこの発明の実施例の略断面図、第２図は同実施
例におけるフィラメント加熱電流−電子放射電流特性図
、第３図は同実施例における加速電極電位−電子放射電
流特性図、第４図は同実施例におけるフィラメント加熱
電流−被加工物電流特性図、第５図は同実施例における
電子放射電流−被加工物電流特性図である。
１・・・真空槽、２・・・蒸発源、４・・・被加工物、
６・・・イオン化電極、マ・・・加速電極、８・・・熱
電子放射フィラメント。[Brief Description of the Drawings] Fig. 1 is a schematic sectional view of an embodiment of the present invention, Fig. 2 is a filament heating current-electron emission current characteristic diagram in the same embodiment, and Fig. 3 is an accelerating electrode potential in the same embodiment. - Electron emission current characteristic diagram, FIG. 4 is a filament heating current-workpiece current characteristic diagram in the same example, and FIG. 5 is an electron emission current-workpiece current characteristic diagram in the same example. 1... Vacuum chamber, 2... Evaporation source, 4... Workpiece,
6... Ionization electrode, M... Accelerating electrode, 8... Thermionic emission filament.
Claims (1)
化手段と、これによりイオン化された蒸気を被加工物へ
向けて加速する電界を附与する手段とを有するイオンプ
レーティング装置において、上記被加工物へ向う蒸気イ
オンの径路中または径路に接近した位置に熱電子放射フ
イラメントを設けたことを特徴とするイオンプレーテイ
ング装置。(1) In an ion plating apparatus having an evaporation source, means for ionizing vapor evaporated from the evaporation source, and means for applying an electric field to accelerate the ionized vapor toward the workpiece, An ion plating apparatus characterized in that a thermionic emitting filament is provided in the path of vapor ions toward a workpiece or in a position close to the path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6149887A JPS63227770A (en) | 1987-03-16 | 1987-03-16 | Ion plating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6149887A JPS63227770A (en) | 1987-03-16 | 1987-03-16 | Ion plating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63227770A true JPS63227770A (en) | 1988-09-22 |
Family
ID=13172819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6149887A Pending JPS63227770A (en) | 1987-03-16 | 1987-03-16 | Ion plating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63227770A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013060649A (en) * | 2011-09-15 | 2013-04-04 | Shinko Seiki Co Ltd | Ion plating apparatus and ion plating method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5258081A (en) * | 1975-11-10 | 1977-05-13 | Hitachi Ltd | Apparatus for attaching thin film |
| JPS546874A (en) * | 1977-06-20 | 1979-01-19 | Nippon Telegr & Teleph Corp <Ntt> | Thin film forming apparatus |
-
1987
- 1987-03-16 JP JP6149887A patent/JPS63227770A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5258081A (en) * | 1975-11-10 | 1977-05-13 | Hitachi Ltd | Apparatus for attaching thin film |
| JPS546874A (en) * | 1977-06-20 | 1979-01-19 | Nippon Telegr & Teleph Corp <Ntt> | Thin film forming apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013060649A (en) * | 2011-09-15 | 2013-04-04 | Shinko Seiki Co Ltd | Ion plating apparatus and ion plating method |
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