JPH04258101A - Chip resistor - Google Patents
Chip resistorInfo
- Publication number
- JPH04258101A JPH04258101A JP1981891A JP1981891A JPH04258101A JP H04258101 A JPH04258101 A JP H04258101A JP 1981891 A JP1981891 A JP 1981891A JP 1981891 A JP1981891 A JP 1981891A JP H04258101 A JPH04258101 A JP H04258101A
- Authority
- JP
- Japan
- Prior art keywords
- chip resistor
- resistor
- characters
- thick film
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 14
- 239000013212 metal-organic material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 31
- 239000010409 thin film Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000007650 screen-printing Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 238000001354 calcination Methods 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 14
- 238000007747 plating Methods 0.000 description 6
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000002003 electrode paste Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Details Of Resistors (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明はチップ抵抗器に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to chip resistors.
【0002】0002
【従来の技術】近年、チップ抵抗器は小型軽量化が進み
電子回路の高密度化に大いに貢献している。BACKGROUND OF THE INVENTION In recent years, chip resistors have become smaller and lighter and have greatly contributed to higher density electronic circuits.
【0003】以下に、従来のチップ抵抗器について説明
する。図3は従来のチップ抵抗器の断面図を示すもので
ある。図3において、アルミナ等の絶縁性基板31上に
Ag系の厚膜電極32を形成した後、RuO2系厚膜抵
抗体33を形成する。その後、レーザーを用いて抵抗値
を修正した後、RuO2系厚膜抵抗体33を保護するた
めに一次コートガラス34を施している。次に、一次コ
ートガラス34上に厚膜組成からなる捺印ペーストを印
刷,乾燥させた後、捺印文字を保護するための二次コー
トガラスを印刷,乾燥させて焼成し、一次コートガラス
34,捺印文字35,二次コートガラス38を同時に形
成する。その後絶縁性基板31を短冊状に分割し、Ag
系の厚膜電極32を用いて端面電極36を形成した後個
片分割し、端面電極36上にメッキ層37を形成する。A conventional chip resistor will be explained below. FIG. 3 shows a cross-sectional view of a conventional chip resistor. In FIG. 3, after forming an Ag-based thick film electrode 32 on an insulating substrate 31 made of alumina or the like, a RuO2-based thick film resistor 33 is formed. Thereafter, after correcting the resistance value using a laser, a primary coat glass 34 is applied to protect the RuO2 thick film resistor 33. Next, a marking paste having a thick film composition is printed and dried on the primary coated glass 34, and then a secondary coated glass for protecting the stamped characters is printed, dried and fired, and the first coated glass 34 and the stamped Characters 35 and secondary coat glass 38 are formed at the same time. After that, the insulating substrate 31 is divided into strips, and Ag
After forming an end face electrode 36 using the thick film electrode 32 of the system, it is divided into individual pieces, and a plating layer 37 is formed on the end face electrode 36.
【0004】0004
【発明が解決しようとする課題】しかしながら、上記の
従来のチップ抵抗器では、捺印ペーストが厚膜材料から
形成されるため、捺印文字35によりチップ抵抗器の最
表面に凹凸が生じ、自動実装時に吸着ミスが発生すると
いう問題点を有していた。[Problems to be Solved by the Invention] However, in the above-mentioned conventional chip resistor, since the marking paste is formed from a thick film material, the marking paste 35 causes unevenness on the outermost surface of the chip resistor, which causes problems during automatic mounting. There was a problem in that suction errors occurred.
【0005】本発明は、上記従来の問題点を解決するた
めのもので、チップ抵抗器の最表面の凹凸がほとんどな
く、きわめて優れた実装性を有すると共に、捺印文字が
薄膜であるため文字が識別しやすい優れたチップ抵抗器
を提供することを目的とする。The present invention is intended to solve the above-mentioned conventional problems, and has very little unevenness on the outermost surface of a chip resistor, and has extremely excellent mounting performance.Since the printed characters are a thin film, the characters can be easily printed. The purpose is to provide excellent chip resistors that are easy to identify.
【0006】[0006]
【課題を解決するための手段】この目的を達成するため
に本発明のチップ抵抗器は、絶縁性基板と、この絶縁性
基板上に形成された一対の電極と、この電極に接続する
ように形成された抵抗体と、この抵抗体上に形成された
ガラス膜と、このガラス膜上に形成された金属有機物か
らなる捺印表示とを備えたものである。[Means for Solving the Problems] To achieve this object, the chip resistor of the present invention includes an insulating substrate, a pair of electrodes formed on the insulating substrate, and a pair of electrodes connected to the electrodes. The device includes a resistor, a glass film formed on the resistor, and a stamp made of a metal organic substance formed on the glass film.
【0007】[0007]
【作用】本発明の構成により、チップ抵抗器の最表面の
凹凸がなくなるため自動実装時の吸着ミスが大幅に少な
くなり実装性の優れたチップ抵抗器を得ることができる
。[Function] According to the structure of the present invention, since there are no irregularities on the outermost surface of the chip resistor, suction errors during automatic mounting are greatly reduced, and a chip resistor with excellent mounting performance can be obtained.
【0008】[0008]
【実施例】以下、本発明の一実施例のチップ抵抗器につ
いて、図面を参照しながら説明する。図1(a),(b
)は本発明の一実施例におけるチップ抵抗器を示す図で
あり、それぞれ上面図と断面図である。図1において、
11はアルミナよりなる絶縁性基板であり、この絶縁性
基板11上には一対の厚膜電極12が形成されている。
13は厚膜電極12に両端部が重なるように設けられた
厚膜抵抗体である。14は厚膜抵抗体13を覆うように
形成された一次コートガラスである。この一次コートガ
ラス14上には捺印文字15が設けられている。絶縁性
基板11の端面には前記厚膜電極12に接続するように
端面電極16が設けられ、さらにこの端面電極16を覆
うようにメッキ層17が形成されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS A chip resistor according to an embodiment of the present invention will be described below with reference to the drawings. Figure 1(a),(b)
) are diagrams showing a chip resistor in one embodiment of the present invention, and are a top view and a cross-sectional view, respectively. In Figure 1,
11 is an insulating substrate made of alumina, and a pair of thick film electrodes 12 are formed on this insulating substrate 11. Reference numeral 13 denotes a thick film resistor provided so that both ends thereof overlap the thick film electrode 12. A primary coat glass 14 is formed to cover the thick film resistor 13. Stamp characters 15 are provided on this primary coat glass 14. An end surface electrode 16 is provided on the end surface of the insulating substrate 11 so as to be connected to the thick film electrode 12, and a plating layer 17 is further formed to cover this end surface electrode 16.
【0009】以上のように構成されたチップ抵抗器につ
いて、図2を用いてその製造方法を説明する。まず、耐
熱性及び絶縁性に優れた96%アルミナの絶縁性基板1
1を受け入れる。次に、Agを主成分とする導体ペース
トを絶縁性基板11の両端部にスクリーン印刷し、ベル
ト式連続焼成炉によって850℃の温度で、ピーク時間
6分,IN−OUT時間50分のプロファイルによって
焼成し厚膜電極12を形成する。A method of manufacturing the chip resistor constructed as described above will be explained with reference to FIG. First, an insulating substrate 1 made of 96% alumina with excellent heat resistance and insulation properties.
Accept 1. Next, a conductive paste containing Ag as the main component was screen printed on both ends of the insulating substrate 11, and was heated in a belt-type continuous firing furnace at a temperature of 850°C with a profile of a peak time of 6 minutes and an IN-OUT time of 50 minutes. The thick film electrode 12 is formed by firing.
【0010】次に、前記厚膜電極12に電気的に接続す
るようにRuO2を主成分とする厚膜抵抗ペーストをス
クリーン印刷し、ベルト式連続焼成炉により前記厚膜電
極12と同じ条件で焼成し厚膜抵抗体13を形成する。
さらに、前記厚膜抵抗体13の抵抗値を揃えるためにレ
ーザー光(発振周波数は5kHz,出力は3.0W)に
よって抵抗値修正を行う。その後、前記厚膜抵抗体13
を保護するために、前記厚膜抵抗体13を覆うように黒
色のオーバーコートガラスペーストをスクリーン印刷し
、ベルト式連続焼成炉により600℃の温度でピーク時
間5分,IN−OUT時間30分のプロファイルによっ
て焼成し、一次コートガラス14を形成する。次にAu
を主成分とする金属有機物ペーストを一次コートガラス
14上にスクリーン印刷した後、120℃,10分で乾
燥させ、ベルト式連続焼成炉にて600℃の温度でピー
ク時間5分,IN−OUT時間30分のプロファイルに
よって焼成し捺印文字15を形成する。その後、この基
板を短冊状に分割し、基板端面に前記厚膜電極12に接
続するようにAgを主成分とする端面電極ペースト塗布
・乾燥し、ベルト式連続焼成炉にてピーク温度600℃
でピーク時間5分,IN−OUT時間30分のプロファ
イルで焼成し、端面電極層16を形成する。さらに個片
分割した後、はんだ付け性や信頼性を向上させるために
、露出している前記端面電極層16上にNiメッキを施
した後、はんだメッキを行い、メッキ層17とする。Next, a thick film resistor paste containing RuO2 as a main component is screen printed so as to be electrically connected to the thick film electrode 12, and fired in a belt type continuous firing furnace under the same conditions as the thick film electrode 12. Then, a thick film resistor 13 is formed. Further, in order to equalize the resistance values of the thick film resistor 13, the resistance values are corrected using a laser beam (oscillation frequency: 5 kHz, output: 3.0 W). After that, the thick film resistor 13
In order to protect the thick film resistor 13, a black overcoat glass paste was screen printed to cover the thick film resistor 13, and a belt-type continuous firing furnace was used to heat the film at a temperature of 600°C for 5 minutes at peak time and 30 minutes at IN-OUT time. The primary coat glass 14 is formed by firing according to the profile. Next, Au
After screen-printing a metal-organic paste containing as a main component onto the primary coat glass 14, it was dried at 120°C for 10 minutes, and then heated in a belt-type continuous firing furnace at a temperature of 600°C for 5 minutes at a peak time and an IN-OUT time of 5 minutes. The stamped characters 15 are formed by baking according to the profile for 30 minutes. Thereafter, this substrate was divided into strips, an end electrode paste containing Ag as a main component was applied to the end surface of the substrate so as to be connected to the thick film electrode 12, and dried.
The end face electrode layer 16 is formed by firing with a profile of a peak time of 5 minutes and an IN-OUT time of 30 minutes. After further dividing into individual pieces, in order to improve solderability and reliability, Ni plating is performed on the exposed end surface electrode layer 16, and then solder plating is performed to form a plating layer 17.
【0011】本実施例によれば、捺印ペーストに金属有
機物ペーストを用いていることで、捺印文字15の膜厚
を0.1μmとすることができ、従来の捺印が10μm
であったのに比して1/100となっている。これによ
りチップ抵抗器の最表面の凹凸がなくなるため、自動実
装時の吸着が大幅に少なくなり実装性の優れたチップ抵
抗器が提供できる。According to this embodiment, by using a metal-organic paste as the marking paste, the film thickness of the marking characters 15 can be made 0.1 μm, compared to the conventional marking of 10 μm.
This is 1/100 compared to the previous year. This eliminates unevenness on the outermost surface of the chip resistor, which greatly reduces suction during automatic mounting, making it possible to provide a chip resistor with excellent mounting performance.
【0012】尚、本実施例では、厚膜抵抗ペースト及び
Ag系の厚膜電極ペーストの焼成温度を850℃とし、
オーバーコートガラスペーストおよび捺印文字用金属有
機物ペーストさらに端面電極ペーストの焼成温度を60
0℃としたが、これは焼成温度を限定するものではない
。また、捺印ペーストと端面電極を個別に焼成して形成
したが、同時に焼成して形成することも可能である。
さらに、捺印文字用金属有機物ペーストはAuを主成分
とするものを用いたが、Cr等の焼成後黒色を呈する金
属やPt等の貴金属系の金属有機物ペーストでもよい。In this example, the firing temperature of the thick film resistor paste and the Ag-based thick film electrode paste was set at 850°C.
The firing temperature of the overcoat glass paste, the metal-organic paste for marking characters, and the end electrode paste was increased to 60℃.
Although the firing temperature was set at 0°C, this does not limit the firing temperature. Further, although the marking paste and the end face electrode were formed by firing separately, it is also possible to form them by firing them at the same time. Further, although the metal-organic paste for stamping characters is mainly composed of Au, it may be a metal-organic paste based on a metal such as Cr that exhibits a black color after firing, or a noble metal such as Pt.
【0013】さらに本実施例では、捺印文字上に捺印文
字保護用の二次コートガラスを施さなかったが、施して
もかまわず、特に限定はしない。Further, in this embodiment, a secondary coat glass for protecting the stamped characters was not applied on the stamped characters, but it may be applied, and there is no particular limitation.
【0014】また、本実施例では、電極及び抵抗体に厚
膜材料を用いたが、スパッタリング法や真空蒸着法等を
用いて形成された薄膜や金属有機物でもよい。Further, in this embodiment, a thick film material is used for the electrodes and the resistor, but a thin film or a metal organic material formed using a sputtering method, a vacuum evaporation method, or the like may be used.
【0015】[0015]
【図1】(a)本発明の一実施例におけるチップ抵抗器
の上面図
(b)同実施例におけるチップ抵抗器の断面図FIG. 1: (a) Top view of a chip resistor in one embodiment of the present invention; (b) Cross-sectional view of a chip resistor in the same embodiment.
【図2】
同実施例におけるチップ抵抗器の製造工程図[Figure 2]
Manufacturing process diagram of the chip resistor in the same example
【図3】従
来のチップ抵抗器の断面図[Figure 3] Cross-sectional view of a conventional chip resistor
11 絶縁性基板 12 厚膜電極 13 厚膜抵抗体 14 一次コートガラス 15 捺印文字 16 端面電極 17 メッキ層 11 Insulating substrate 12 Thick film electrode 13 Thick film resistor 14 Primary coat glass 15 Seal characters 16 End electrode 17 Plating layer
Claims (1)
れた一対の電極と、この電極に接続するように形成され
た抵抗体と、この抵抗体上に形成されたガラス膜と、こ
のガラス膜上に形成された金属有機物からなる捺印表示
とを備えたことを特徴とするチップ抵抗器。1. An insulating substrate, a pair of electrodes formed on the insulating substrate, a resistor formed to be connected to the electrode, and a glass film formed on the resistor. A chip resistor comprising a stamp made of a metal organic material formed on the glass film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1981891A JPH04258101A (en) | 1991-02-13 | 1991-02-13 | Chip resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1981891A JPH04258101A (en) | 1991-02-13 | 1991-02-13 | Chip resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04258101A true JPH04258101A (en) | 1992-09-14 |
Family
ID=12009902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1981891A Pending JPH04258101A (en) | 1991-02-13 | 1991-02-13 | Chip resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04258101A (en) |
-
1991
- 1991-02-13 JP JP1981891A patent/JPH04258101A/en active Pending
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