JPH0645118A - Manufacture of rectangular thin film chip resistor - Google Patents

Manufacture of rectangular thin film chip resistor

Info

Publication number
JPH0645118A
JPH0645118A JP4199376A JP19937692A JPH0645118A JP H0645118 A JPH0645118 A JP H0645118A JP 4199376 A JP4199376 A JP 4199376A JP 19937692 A JP19937692 A JP 19937692A JP H0645118 A JPH0645118 A JP H0645118A
Authority
JP
Japan
Prior art keywords
thin film
substrate
forming
electrode layer
chip resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4199376A
Other languages
Japanese (ja)
Other versions
JP3304130B2 (en
Inventor
Hiroyuki Yamada
博之 山田
Tomio Inoue
富夫 井上
Akio Fukuoka
章夫 福岡
Seiji Tsuda
清二 津田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP19937692A priority Critical patent/JP3304130B2/en
Publication of JPH0645118A publication Critical patent/JPH0645118A/en
Application granted granted Critical
Publication of JP3304130B2 publication Critical patent/JP3304130B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To obtain a rectangular thin film chip resistor, with a substrate having excellent insulating property, at low cost by a method wherein upper face and rear electrodes are formed on the substrate, which was split-formed in advance, using a printing machine and belt-type continuous calculating oven. CONSTITUTION:First, a dividing groove 2 is formed on both front and back sides of a substrate 1. Electrode paste is screen-printed on the substrate, dried up, calcined in a belt-type calcinating oven, and a thin upper-face electrode layer 3 and a thin film rear electrode layer 4 are formed. Then, a thin film resistor 5 is formed on the substrate 1 by sputtering, a resistance pattern 6 is formed by etching, and a heat treatment is conducted. Subsequently, resistance value is corrected, resin paste screen-printing is performed, it is heat-cured, and a protective coating 7 is formed. Besides, the substrate 1 is divided into rectangular substrates 1a, and after a thin film edge-face electrode layer 8 has been formed, a plated layer 9 is formed. As a result, manufacturing process can be simplified, and a low-priced rectangular thin film chip resistor high in insulation can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は一般的に電子回路に用い
られる角形薄膜チップ抵抗器の製造方法に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates generally to a method of manufacturing a rectangular thin film chip resistor used in electronic circuits.

【0002】[0002]

【従来の技術】近年、電子機器の小型化に伴い、回路基
板に使用される電子部品に対しても実装密度を高めるた
め、小形への要求が高まっている。角形チップ抵抗器に
対しても小形化が進められるとともに、より高精度で低
雑音な特性を満足させるため薄膜チップ抵抗器への要求
が高まっている。
2. Description of the Related Art In recent years, with the miniaturization of electronic equipment, there is an increasing demand for miniaturization in order to increase the mounting density of electronic components used in circuit boards. With the progress toward miniaturization of rectangular chip resistors, there is an increasing demand for thin film chip resistors in order to satisfy the characteristics of higher accuracy and lower noise.

【0003】従来の角形薄膜チップ抵抗器の製造方法の
一例を図3に示す。まず、従来の製造工程は高純度のア
ルミナ基板などからなる耐熱性の絶縁基板(分割溝な
し)21を受け入れる工程Aをスタートし、次に前記絶
縁基板21上にNi−Cr等の薄膜抵抗体を形成するス
パッタ工程Bを経て、前記薄膜抵抗体を抵抗パターン2
2に整形するエッチング工程Cを行い、次に前記抵抗パ
ターン22上にNi等の薄膜電極を形成するスパッタ工
程Dを経て、前記薄膜電極を電極パターン23に整形す
るエッチング工程Eを行い、抵抗および電極パターンを
安定な膜にするために、窒素中などで350〜400℃
の温度の熱処理工程Fを行う。その後、抵抗パターンの
抵抗値を所定の値に修正するためにレーザートリミング
等により、抵抗値修正工程Gを行う。次に、抵抗値修正
済み抵抗パターン24を保護するために、熱硬化性の樹
脂による保護コート25形成工程Hを行う。次に、絶縁
基板21を分割し、端面電極層27を形成するための準
備工程として、絶縁基板21に分割のための溝26を形
成するスクライブ工程Iと、絶縁基板21を短冊状基板
21aに分割する一次基板分割工程Jを行い、その短冊
状基板21aの端面にスパッタ等を用い、端面電極層2
7を形成する端面電極形成工程Kを行う。そして露出し
ている電極面にめっきを施すための準備工程として、短
冊状基板21aを個片状基板21bに分割する二次基板
分割工程Lを行い、最後にはんだ付け時の信頼性の確保
のため電極めっき28を形成する電極めっき工程Mを行
い、角形薄膜チップ抵抗器を形成していた。
An example of a conventional method for manufacturing a rectangular thin film chip resistor is shown in FIG. First, in the conventional manufacturing process, a process A for receiving a heat-resistant insulating substrate (without dividing grooves) 21 made of a high-purity alumina substrate or the like is started, and then a thin film resistor such as Ni-Cr is formed on the insulating substrate 21. Through the sputtering process B for forming the
2 is performed, and then an etching step E for shaping the thin film electrode into an electrode pattern 23 is performed through a sputtering step D for forming a thin film electrode of Ni or the like on the resistance pattern 22. 350 ~ 400 ℃ in nitrogen etc. to make the electrode pattern a stable film.
The heat treatment step F at the temperature is performed. After that, a resistance value correction step G is performed by laser trimming or the like in order to correct the resistance value of the resistance pattern to a predetermined value. Next, in order to protect the resistance pattern 24 whose resistance value has been corrected, a protective coat 25 forming step H of a thermosetting resin is performed. Next, as a preparatory step for dividing the insulating substrate 21 and forming the end face electrode layer 27, a scribing step I of forming a groove 26 for dividing the insulating substrate 21 and the insulating substrate 21 into a strip substrate 21a. A primary substrate dividing step J for dividing is performed, and the end face electrode layer 2 is formed on the end face of the strip-shaped substrate 21a by sputtering or the like.
An end face electrode forming step K for forming 7 is performed. Then, as a preparatory step for plating the exposed electrode surface, a secondary board dividing step L for dividing the strip-shaped board 21a into individual board 21b is performed, and finally reliability for soldering is ensured. Therefore, the electrode plating step M for forming the electrode plating 28 was performed to form the rectangular thin film chip resistor.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、従来の
薄膜チップ抵抗器は次に示すような課題を有していた。 (1) スパッタにより抵抗体及び上面電極を形成して
いるため、連続処理が難しく、量産するためには多くの
スパッタ装置が必要となり、コスト高になる。 (2) 分割溝なしの絶縁基板にパターン形成後、レー
ザースクライブによって分割のための溝を形成している
ため、美観を損なうばかりでなく、レーザーの熱的衝撃
による基板のマイクロクラックが生じやすく、絶縁劣化
の原因になりかねないといった課題がある。
However, the conventional thin film chip resistor has the following problems. (1) Since the resistor and the upper surface electrode are formed by sputtering, continuous processing is difficult, and many sputtering devices are required for mass production, resulting in high cost. (2) Since a groove for division is formed by laser scribing after forming a pattern on an insulating substrate without a division groove, not only does it impair aesthetics, but microcracks on the substrate easily occur due to thermal shock of the laser, There is a problem that it may cause insulation deterioration.

【0005】本発明は上記課題を解決するために、安価
で、基板の絶縁性に優れた角形薄膜チップ抵抗器を提供
することを目的とする。
In order to solve the above-mentioned problems, it is an object of the present invention to provide a prismatic thin film chip resistor which is inexpensive and has an excellent substrate insulating property.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に本発明の角形薄膜チップ抵抗器の製造方法は、表裏面
に互いに相対するように設けた縦方向及び横方向の分割
溝を有する絶縁基板の両主面上に金属有機物からなる電
極材料を印刷し焼成して一対の薄膜上面電極層と一対の
薄膜裏面電極層を形成する工程と、この一対の上面電極
層に重なるように薄膜抵抗体を形成する工程と、この薄
膜抵抗体の抵抗値を修正する工程と、この薄膜抵抗体を
完全に覆うように保護膜を形成する工程と、端面電極層
を形成するための準備工程として基板を一次分割する工
程と、前記一対の上面電極層と一対の裏面電極層とを電
気的に接続するように一対の薄膜端面電極層を形成する
工程と、電極めっきのための準備工程として基板を個片
に分割する工程と、露出した電極部に電極めっきをする
工程とを備えたことを特徴とするものである。
In order to achieve the above object, a method of manufacturing a rectangular thin film chip resistor according to the present invention is an insulation having vertical and horizontal dividing grooves provided on the front and back surfaces so as to face each other. A step of forming a pair of thin film upper surface electrode layers and a pair of thin film back surface electrode layers by printing an electrode material composed of a metal organic material on both main surfaces of the substrate and baking the same, and a thin film resistance so as to overlap the pair of upper surface electrode layers. A step of forming a body, a step of correcting the resistance value of the thin film resistor, a step of forming a protective film so as to completely cover the thin film resistor, and a substrate as a preparation step for forming an end face electrode layer. A step of primary division, a step of forming a pair of thin film end surface electrode layers so as to electrically connect the pair of upper surface electrode layers and a pair of back surface electrode layers, and a substrate as a preparation step for electrode plating. And the process of dividing into pieces It is characterized in that a step of the electrode plating on the exposed electrode portions.

【0007】[0007]

【作用】本発明によれば、スパッタ装置を用いず、印刷
機とベルト式連続焼成炉によって連続的に上面及び裏面
電極を形成でき、製造工程を簡略化できるため、製造コ
ストが下がり、安価な角形薄膜チップ抵抗器を提供でき
る。
According to the present invention, the top and back electrodes can be continuously formed by a printer and a belt type continuous firing furnace without using a sputtering device, and the manufacturing process can be simplified, so that the manufacturing cost is reduced and the cost is low. A square thin film chip resistor can be provided.

【0008】また、あらかじめ分割形成済みの絶縁基板
を使用するため、従来のようにレーザースクライブによ
って分割のための溝を形成する必要がないため、基板の
絶縁性が向上する。
Further, since an insulating substrate which has been divided and formed in advance is used, it is not necessary to form a groove for dividing by laser scribing as in the conventional case, and thus the insulating property of the substrate is improved.

【0009】[0009]

【実施例】以下、本発明の一実施例の角形薄膜チップ抵
抗器の製造方法について、図面を用いて説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a rectangular thin film chip resistor according to an embodiment of the present invention will be described below with reference to the drawings.

【0010】図1は本発明の一実施例の角形薄膜チップ
抵抗器の製造方法を示す工程図で、図2は図1の工程に
よって製造した製品の断面図である。
FIG. 1 is a process diagram showing a method of manufacturing a rectangular thin film chip resistor according to an embodiment of the present invention, and FIG. 2 is a sectional view of a product manufactured by the process of FIG.

【0011】まず、耐熱性及び絶縁性に優れた96アル
ミナ基板1を受け入れる工程Aを行う。この96アルミ
ナ基板1の表裏面には、短冊状、および個片状に分割す
るために、互いに相対するように設けた縦方向および横
方向の分割のための分割溝2(グリーンシート時に金型
成型)が形成されている。
First, step A for receiving the 96 alumina substrate 1 having excellent heat resistance and insulation is performed. The front and back surfaces of the 96 alumina substrate 1 are divided into strips and individual pieces, and in order to divide into strips and pieces, the division grooves 2 for dividing in the vertical direction and the horizontal direction (a mold for green sheets are used). Molding) is formed.

【0012】次に、前記96アルミナ基板1の表面にA
uを主成分とする金属有機物からなる電極ペーストをス
クリーン印刷・乾燥し、更に前記96アルミナ基板1の
裏面に前記金属有機物電極ペーストの有機成分だけを飛
ばし、金属成分だけをアルミナ基板1上に焼き付けるた
めに、ベルト式連続焼成炉によって850℃の温度で、
ピーク時間6分,IN−OUT時間45分のプロファイ
ルによって焼成し、薄膜上面電極層3及び薄膜裏面電極
層4を同時に形成する工程Bを行う。
Next, A is formed on the surface of the 96 alumina substrate 1.
An electrode paste composed of a metal organic material containing u as a main component is screen-printed and dried, and only the organic component of the metal organic electrode paste is blown onto the back surface of the 96 alumina substrate 1, and only the metal component is baked on the alumina substrate 1. In order to achieve this, a belt type continuous firing furnace is used at a temperature of 850 ° C.
A process B is performed in which the thin film upper surface electrode layer 3 and the thin film back surface electrode layer 4 are simultaneously formed by baking according to a profile with a peak time of 6 minutes and an IN-OUT time of 45 minutes.

【0013】次に前記96アルミナ基板1上にNi−C
rの薄膜抵抗体5を形成するスパッタ工程Cを経て、前
記薄膜抵抗体5を抵抗パターン6に整形するエッチング
工程Dを行い、抵抗パターンを安定な膜にするために、
窒素中で350〜400℃の温度の熱処理工程Eを行
う。
Next, Ni--C is formed on the 96 alumina substrate 1.
After the sputtering step C for forming the thin film resistor 5 of r, an etching step D for shaping the thin film resistor 5 into the resistance pattern 6 is performed to make the resistance pattern a stable film.
A heat treatment step E at a temperature of 350 to 400 ° C. is performed in nitrogen.

【0014】その後、抵抗パターン6の抵抗値を所定の
値に修正するためにレーザートリミングにより、抵抗値
修正工程Fを行う。
Then, a resistance value correcting step F is performed by laser trimming in order to correct the resistance value of the resistance pattern 6 to a predetermined value.

【0015】次に、抵抗値修正済み抵抗パターンを保護
するために、樹脂ペースとをスクリーン印刷し、熱硬化
して保護コート7を形成する工程Gを行う。
Next, in order to protect the resistance pattern whose resistance value has been corrected, a step G of screen-printing a resin pace and thermosetting to form the protective coat 7 is performed.

【0016】次に、96アルミナ基板1を分割し、薄膜
端面電極層8を形成するための準備工程として、96ア
ルミナ基板1を短冊状基板1aに分割する一次基板分割
工程Hを行い、その短冊状基板1aの端面にスパッタに
よりNiの薄膜端面電極層8を形成する端面電極形成工
程Iを行う。
Next, as a preparatory step for dividing the 96 alumina substrate 1 and forming the thin film end face electrode layer 8, a primary substrate dividing step H for dividing the 96 alumina substrate 1 into strip substrates 1a is performed. An end face electrode forming step I of forming a thin film end face electrode layer 8 of Ni on the end face of the substrate 1a by sputtering is performed.

【0017】そして露出している電極面にめっきを施す
ための準備工程として、短冊状基板1aを個片状基板1
bに分割する二次基板分割工程Jを行い、最後に露出し
ている薄膜上面電極層3と薄膜裏面電極層4と薄膜端面
電極層8のはんだ付け時の電極食われの防止およびはん
だ付け時の信頼性の確保のため、電解めっきによってN
i,Sn−Pbのめっき層9を形成する電極めっき工程
Kを行う。
Then, as a preparatory step for plating the exposed electrode surface, the strip-shaped substrate 1a is separated into individual substrate 1
The secondary substrate dividing step J for dividing into b is performed, and the electrode exposed at the time of soldering the thin film upper surface electrode layer 3, the thin film back surface electrode layer 4, and the thin film end surface electrode layer 8 which are exposed at the end are prevented and at the time of soldering. To ensure the reliability of the
An electrode plating step K for forming the plating layer 9 of i, Sn-Pb is performed.

【0018】以上の工程により、本発明の実施例による
角形薄膜チップ抵抗器を試作した。この本発明の角形薄
膜チップ抵抗器と、従来の角形薄膜チップ抵抗器との抵
抗値ばらつき、抵抗温度特性、電流雑音特性を比較した
ところ、同等であることがわかった。
Through the above steps, a rectangular thin film chip resistor according to an embodiment of the present invention was manufactured as a prototype. Comparison of the resistance variation, resistance temperature characteristic, and current noise characteristic between the rectangular thin film chip resistor of the present invention and the conventional rectangular thin film chip resistor revealed that they were equivalent.

【0019】なお、本実施例では金属有機物電極ペース
トの焼成温度を850℃としたが、これは焼成温度を限
定するものではない。
In this embodiment, the firing temperature of the metal organic electrode paste was set to 850 ° C., but this does not limit the firing temperature.

【0020】また、金属有機物電極ペーストはAuを主
成分とする電極ペーストを用いたが、Ni系や他の貴金
属系でもよく、金属有機物電極ペーストなら何でも良
い。
Further, although the metal organic electrode paste is the electrode paste containing Au as a main component, it may be Ni-based or other noble metal-based, and any metal organic electrode paste may be used.

【0021】また、絶縁基板として両面に分割溝を設け
たが、どちらか一方にのみ設けても良い。
Although the dividing grooves are provided on both sides as the insulating substrate, they may be provided only on one of them.

【0022】[0022]

【発明の効果】以上のように本発明によれば、スパッタ
装置を用いず、印刷機とベルト式連続焼成炉によって連
続的に薄膜電極層を形成でき、製造工程を簡略化できる
ため、製造コストが下がり、安価な角形薄膜チップ抵抗
器を提供できるばかりでなく、あらかじめ分割溝形成済
みの絶縁基板を使用するため、従来のようにレーザース
クライブによって分割のための溝を形成する必要がない
ため、基板の絶縁性が向上する。
As described above, according to the present invention, a thin film electrode layer can be continuously formed by a printing machine and a belt type continuous firing furnace without using a sputtering device, and the manufacturing process can be simplified. Not only can provide an inexpensive rectangular thin film chip resistor, but also because it uses an insulating substrate that has been pre-divided with dividing grooves, there is no need to form grooves for dividing by laser scribing as in the past. The insulating property of the substrate is improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の角形薄膜チップ抵抗器の製
造方法を示す工程図
FIG. 1 is a process diagram showing a method of manufacturing a prismatic thin film chip resistor according to an embodiment of the present invention.

【図2】本発明の一実施例の角形薄膜チップ抵抗器の製
造を示す断面図
FIG. 2 is a cross-sectional view showing the manufacture of a prismatic thin film chip resistor according to an embodiment of the present invention.

【図3】従来の角形薄膜チップ抵抗器の製造方法を示す
工程図
FIG. 3 is a process diagram showing a method of manufacturing a conventional rectangular thin film chip resistor.

【符号の説明】[Explanation of symbols]

1 96アルミナ基板 2 分割溝 3 薄膜上面電極層 4 薄膜裏面電極層 5 薄膜抵抗体 7 保護コート 8 薄膜端面電極層 9 めっき層 1 96 Alumina substrate 2 Dividing groove 3 Thin film upper surface electrode layer 4 Thin film back surface electrode layer 5 Thin film resistor 7 Protective coat 8 Thin film end surface electrode layer 9 Plating layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 津田 清二 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Seiji Tsuda 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】表裏面の少なくとも一方に互いに相対する
ように設けた縦方向及び横方向の分割溝を有する絶縁基
板の両主面上に金属有機物からなる電極材料を印刷し焼
成して一対の薄膜上面電極層と一対の薄膜裏面電極層を
形成する工程と、この一対の薄膜上面電極層に重なるよ
うに薄膜抵抗体を形成する工程と、この薄膜抵抗体の抵
抗値を修正する工程と、この薄膜抵抗体を完全に覆うよ
うに保護膜を形成する工程と、薄膜端面電極層を形成す
るための準備工程として基板を一次分割する工程と、前
記一対の薄膜上面電極層と一対の薄膜裏面電極層とを電
気的に接続するように一対の薄膜端面電極層を形成する
工程と、電極めっきのための準備工程として基板を個片
に分割する工程と、露出した電極部に電極めっきを形成
する工程とを備えたことを特徴とする角形薄膜チップ抵
抗器の製造方法。
1. An electrode material made of a metal organic material is printed on both main surfaces of an insulating substrate having vertical and horizontal dividing grooves provided on at least one of the front and back surfaces so as to be opposed to each other and baked to form a pair. A step of forming a thin film top surface electrode layer and a pair of thin film back surface electrode layers, a step of forming a thin film resistor so as to overlap the pair of thin film top surface electrode layers, and a step of correcting the resistance value of the thin film resistor, A step of forming a protective film so as to completely cover the thin film resistor, a step of primary dividing the substrate as a preparatory step for forming a thin film end face electrode layer, a pair of the thin film top surface electrode layers and a pair of thin film back surfaces A step of forming a pair of thin film end surface electrode layers so as to electrically connect the electrode layers, a step of dividing the substrate into individual pieces as a preparation step for electrode plating, and an electrode plating on the exposed electrode portion And the process of Method for manufacturing a prismatic thin-film chip resistor, characterized in that.
JP19937692A 1992-07-27 1992-07-27 Method of manufacturing rectangular thin film chip resistor Expired - Fee Related JP3304130B2 (en)

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JP19937692A JP3304130B2 (en) 1992-07-27 1992-07-27 Method of manufacturing rectangular thin film chip resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19937692A JP3304130B2 (en) 1992-07-27 1992-07-27 Method of manufacturing rectangular thin film chip resistor

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JPH0645118A true JPH0645118A (en) 1994-02-18
JP3304130B2 JP3304130B2 (en) 2002-07-22

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001307903A (en) * 2000-04-11 2001-11-02 Koketsu Kagi Kofun Yugenkoshi Method of manufacturing thin film resistor
JP2002064002A (en) * 2000-06-05 2002-02-28 Rohm Co Ltd Chip resistor and its manufacturing method
US7103965B2 (en) 2002-01-17 2006-09-12 Rohm Co., Ltd. Method of making chip resistor
KR100894025B1 (en) * 2001-02-01 2009-04-22 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 Method for resistor trimming with small uniform spot from solid-state UV laser

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001307903A (en) * 2000-04-11 2001-11-02 Koketsu Kagi Kofun Yugenkoshi Method of manufacturing thin film resistor
JP2002064002A (en) * 2000-06-05 2002-02-28 Rohm Co Ltd Chip resistor and its manufacturing method
KR100894025B1 (en) * 2001-02-01 2009-04-22 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 Method for resistor trimming with small uniform spot from solid-state UV laser
US7103965B2 (en) 2002-01-17 2006-09-12 Rohm Co., Ltd. Method of making chip resistor
US7352273B2 (en) 2002-01-17 2008-04-01 Rohm Co., Ltd. Chip resistor

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