JPH0425347B2 - - Google Patents

Info

Publication number
JPH0425347B2
JPH0425347B2 JP61140385A JP14038586A JPH0425347B2 JP H0425347 B2 JPH0425347 B2 JP H0425347B2 JP 61140385 A JP61140385 A JP 61140385A JP 14038586 A JP14038586 A JP 14038586A JP H0425347 B2 JPH0425347 B2 JP H0425347B2
Authority
JP
Japan
Prior art keywords
silicon carbide
reaction
film
gas
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61140385A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62297467A (ja
Inventor
Mamoru Maeda
Juji Furumura
Tadashi Murata
Masaki Okada
Akira Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Tanso Co Ltd
Fujitsu Ltd
Original Assignee
Toyo Tanso Co Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Tanso Co Ltd, Fujitsu Ltd filed Critical Toyo Tanso Co Ltd
Priority to JP61140385A priority Critical patent/JPS62297467A/ja
Publication of JPS62297467A publication Critical patent/JPS62297467A/ja
Publication of JPH0425347B2 publication Critical patent/JPH0425347B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP61140385A 1986-06-18 1986-06-18 炭化ケイ素被膜形成方法 Granted JPS62297467A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61140385A JPS62297467A (ja) 1986-06-18 1986-06-18 炭化ケイ素被膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61140385A JPS62297467A (ja) 1986-06-18 1986-06-18 炭化ケイ素被膜形成方法

Publications (2)

Publication Number Publication Date
JPS62297467A JPS62297467A (ja) 1987-12-24
JPH0425347B2 true JPH0425347B2 (enrdf_load_stackoverflow) 1992-04-30

Family

ID=15267581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61140385A Granted JPS62297467A (ja) 1986-06-18 1986-06-18 炭化ケイ素被膜形成方法

Country Status (1)

Country Link
JP (1) JPS62297467A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01249679A (ja) * 1988-03-29 1989-10-04 Toyo Tanso Kk 黒鉛一炭化珪素複合体並びにその製造法
GB8910182D0 (en) * 1989-05-04 1989-06-21 British Petroleum Co Plc Process for depositing a silicon carbide coating on a filament

Also Published As

Publication number Publication date
JPS62297467A (ja) 1987-12-24

Similar Documents

Publication Publication Date Title
US4312924A (en) Super hard highly pure silicon nitrides
JPH07147251A (ja) 結晶性炭化ケイ素膜の成長方法
EP1151155B1 (en) Cdv method of and reactor for silicon carbide monocrystal growth
Carlsson Processes in interfacial zones during chemical vapour deposition: aspects of kinetics, mechanisms, adhesion and substrate atom transport
US5017527A (en) Mechanical seals of SiC-coated graphite by rate-controlled generation of SiO and process therefor
US4137108A (en) Process for producing a semiconductor device by vapor growth of single crystal Al2 O3
JPS61236604A (ja) β−Ｓｉ↓３Ｎ↓４の合成方法
US3862020A (en) Production method for polycrystalline semiconductor bodies
JPH0425347B2 (enrdf_load_stackoverflow)
JP2000302576A (ja) 炭化珪素被覆黒鉛材
US20050255245A1 (en) Method and apparatus for the chemical vapor deposition of materials
JPH03141198A (ja) 多結晶ダイヤモンド層の製造方法
JP2004075493A (ja) ＣＶＤ−ＳｉＣ被覆黒鉛材及びその製造方法
JPS6010108B2 (ja) 窒化珪素を基体上に熱分解堆積する方法
JPS63166789A (ja) シリコン単結晶引上装置用黒鉛製ルツボとその製造方法
JPH0692761A (ja) ＣＶＤ−ＳｉＣコートＳｉ含浸ＳｉＣ製品およびその製造方法
JPH01249679A (ja) 黒鉛一炭化珪素複合体並びにその製造法
JPS6242996B2 (enrdf_load_stackoverflow)
Yoon et al. Carbon-excess silicon carbide deposition from pyrolysis of tetramethylsilane
JP2001262346A (ja) ピンホ−ルを低減したＳｉＣ被覆黒鉛部材の製法
JPH0547670A (ja) 常圧ｃｖｄ装置のための黒鉛製ウエハ保持治具
JP2920842B2 (ja) 炭化珪素発熱体の製造方法
JP3076846B1 (ja) 化学気相析出法による鉄ケイ化物の製造方法
JPS6114109B2 (enrdf_load_stackoverflow)
JPH06115913A (ja) 炭窒化ほう素の合成法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term