JPH04253323A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPH04253323A
JPH04253323A JP3031799A JP3179991A JPH04253323A JP H04253323 A JPH04253323 A JP H04253323A JP 3031799 A JP3031799 A JP 3031799A JP 3179991 A JP3179991 A JP 3179991A JP H04253323 A JPH04253323 A JP H04253323A
Authority
JP
Japan
Prior art keywords
semiconductor
film
semiconductor layer
base material
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3031799A
Other languages
English (en)
Japanese (ja)
Inventor
Mikio Deguchi
幹雄 出口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3031799A priority Critical patent/JPH04253323A/ja
Priority to US07/802,481 priority patent/US5228948A/en
Priority to DE4140555A priority patent/DE4140555A1/de
Publication of JPH04253323A publication Critical patent/JPH04253323A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy

Landscapes

  • Recrystallisation Techniques (AREA)
JP3031799A 1991-01-29 1991-01-29 半導体装置の製造方法 Pending JPH04253323A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP3031799A JPH04253323A (ja) 1991-01-29 1991-01-29 半導体装置の製造方法
US07/802,481 US5228948A (en) 1991-01-29 1991-12-05 Method for fabricating recrystallized semiconductor film
DE4140555A DE4140555A1 (de) 1991-01-29 1991-12-09 Verfahren zur herstellung einer halbleitereinrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3031799A JPH04253323A (ja) 1991-01-29 1991-01-29 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPH04253323A true JPH04253323A (ja) 1992-09-09

Family

ID=12341120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3031799A Pending JPH04253323A (ja) 1991-01-29 1991-01-29 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US5228948A (https=)
JP (1) JPH04253323A (https=)
DE (1) DE4140555A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010532570A (ja) * 2007-06-26 2010-10-07 マサチューセッツ インスティテュート オブ テクノロジー 薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程
JP2016119461A (ja) * 2014-12-23 2016-06-30 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ シリコン・フォトニクスの集積方法及び構造体

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5540183A (en) * 1993-03-16 1996-07-30 Mitsubishi Denki Kabushiki Kaisha Zone-melting recrystallization of semiconductor materials
JP3841866B2 (ja) * 1996-03-04 2006-11-08 三菱電機株式会社 再結晶化材料の製法、その製造装置および加熱方法
DE102012012088A1 (de) 2012-06-18 2013-12-19 Jean-Paul Theis Verfahren zum Herstellen von Halbleiterdünnschichten auf Fremdsubstraten
US9171971B2 (en) 2013-10-31 2015-10-27 Globalfoundries U.S. 2 Llc Encapsulated sensors
US9691812B2 (en) 2015-04-29 2017-06-27 Globalfoundries Inc. Photodetector and methods of manufacture

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321099A (en) * 1979-11-13 1982-03-23 Nasa Method of fabricating Schottky barrier solar cell
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
JPS59119829A (ja) * 1982-12-27 1984-07-11 Hitachi Ltd 半導体基板のＳｉ層の帯域溶融法
EP0235819B1 (en) * 1986-03-07 1992-06-10 Iizuka, Kozo Process for producing single crystal semiconductor layer
JPS6388819A (ja) * 1986-10-01 1988-04-19 Sharp Corp 半導体装置の製造方法
JPH0283915A (ja) * 1988-09-20 1990-03-26 Ricoh Co Ltd 半導体単結晶薄膜の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010532570A (ja) * 2007-06-26 2010-10-07 マサチューセッツ インスティテュート オブ テクノロジー 薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程
US8633483B2 (en) 2007-06-26 2014-01-21 Massachusetts Institute Of Technology Recrystallization of semiconductor wafers in a thin film capsule and related processes
US9932689B2 (en) 2007-06-26 2018-04-03 Massachusetts Institute Of Technology Semiconductor wafers recrystallized in a partially surrounding thin film capsule
JP2016119461A (ja) * 2014-12-23 2016-06-30 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ シリコン・フォトニクスの集積方法及び構造体
US10546962B2 (en) 2014-12-23 2020-01-28 International Business Machines Corporation Silicon photonics integration method and structure
US11164980B2 (en) 2014-12-23 2021-11-02 International Business Machines Corporation Silicon photonics integration method and structure

Also Published As

Publication number Publication date
DE4140555C2 (https=) 1993-08-05
US5228948A (en) 1993-07-20
DE4140555A1 (de) 1992-08-06

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