JPH0425238B2 - - Google Patents

Info

Publication number
JPH0425238B2
JPH0425238B2 JP60062799A JP6279985A JPH0425238B2 JP H0425238 B2 JPH0425238 B2 JP H0425238B2 JP 60062799 A JP60062799 A JP 60062799A JP 6279985 A JP6279985 A JP 6279985A JP H0425238 B2 JPH0425238 B2 JP H0425238B2
Authority
JP
Japan
Prior art keywords
molecular beam
monomer
group
zns
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60062799A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61222988A (ja
Inventor
Shigeo Kaneda
Meiso Yokoyama
Takao Setoyama
Shuji Sato
Shinichi Motoyama
Norio Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Seiki Co Ltd
Original Assignee
Nippon Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Seiki Co Ltd filed Critical Nippon Seiki Co Ltd
Priority to JP6279985A priority Critical patent/JPS61222988A/ja
Publication of JPS61222988A publication Critical patent/JPS61222988A/ja
Publication of JPH0425238B2 publication Critical patent/JPH0425238B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP6279985A 1985-03-27 1985-03-27 ２−６族化合物半導体素子の製造方法 Granted JPS61222988A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6279985A JPS61222988A (ja) 1985-03-27 1985-03-27 ２−６族化合物半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6279985A JPS61222988A (ja) 1985-03-27 1985-03-27 ２−６族化合物半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS61222988A JPS61222988A (ja) 1986-10-03
JPH0425238B2 true JPH0425238B2 (cg-RX-API-DMAC7.html) 1992-04-30

Family

ID=13210753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6279985A Granted JPS61222988A (ja) 1985-03-27 1985-03-27 ２−６族化合物半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS61222988A (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01157416A (ja) * 1987-12-15 1989-06-20 Matsushita Electric Ind Co Ltd 硫化亜鉛薄膜の製造方法
JPH0251240A (ja) * 1988-08-12 1990-02-21 Sanyo Electric Co Ltd Ｐ型ＺｎＳｅの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528374A (en) * 1978-08-23 1980-02-28 Yasuji Kumagai Forming method for compound film and manufacturing apparatus therefor

Also Published As

Publication number Publication date
JPS61222988A (ja) 1986-10-03

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