JPS61222988A - ２−６族化合物半導体素子の製造方法 - Google Patents
２−６族化合物半導体素子の製造方法Info
- Publication number
- JPS61222988A JPS61222988A JP6279985A JP6279985A JPS61222988A JP S61222988 A JPS61222988 A JP S61222988A JP 6279985 A JP6279985 A JP 6279985A JP 6279985 A JP6279985 A JP 6279985A JP S61222988 A JPS61222988 A JP S61222988A
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- group
- cell
- gas
- monomer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 150000001875 compounds Chemical class 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 239000000178 monomer Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000539 dimer Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 229910021476 group 6 element Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 31
- 239000011701 zinc Substances 0.000 description 26
- 239000005083 Zinc sulfide Substances 0.000 description 18
- 229910052984 zinc sulfide Inorganic materials 0.000 description 18
- 239000013078 crystal Substances 0.000 description 9
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000097 high energy electron diffraction Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6279985A JPS61222988A (ja) | 1985-03-27 | 1985-03-27 | ２−６族化合物半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6279985A JPS61222988A (ja) | 1985-03-27 | 1985-03-27 | ２−６族化合物半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61222988A true JPS61222988A (ja) | 1986-10-03 |
| JPH0425238B2 JPH0425238B2 (cg-RX-API-DMAC7.html) | 1992-04-30 |
Family
ID=13210753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6279985A Granted JPS61222988A (ja) | 1985-03-27 | 1985-03-27 | ２−６族化合物半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61222988A (cg-RX-API-DMAC7.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01157416A (ja) * | 1987-12-15 | 1989-06-20 | Matsushita Electric Ind Co Ltd | 硫化亜鉛薄膜の製造方法 |
| JPH0251240A (ja) * | 1988-08-12 | 1990-02-21 | Sanyo Electric Co Ltd | Ｐ型ＺｎＳｅの製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528374A (en) * | 1978-08-23 | 1980-02-28 | Yasuji Kumagai | Forming method for compound film and manufacturing apparatus therefor |
-
1985
- 1985-03-27 JP JP6279985A patent/JPS61222988A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5528374A (en) * | 1978-08-23 | 1980-02-28 | Yasuji Kumagai | Forming method for compound film and manufacturing apparatus therefor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01157416A (ja) * | 1987-12-15 | 1989-06-20 | Matsushita Electric Ind Co Ltd | 硫化亜鉛薄膜の製造方法 |
| JPH0251240A (ja) * | 1988-08-12 | 1990-02-21 | Sanyo Electric Co Ltd | Ｐ型ＺｎＳｅの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0425238B2 (cg-RX-API-DMAC7.html) | 1992-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |