JPH0424860B2 - - Google Patents
Info
- Publication number
- JPH0424860B2 JPH0424860B2 JP17555285A JP17555285A JPH0424860B2 JP H0424860 B2 JPH0424860 B2 JP H0424860B2 JP 17555285 A JP17555285 A JP 17555285A JP 17555285 A JP17555285 A JP 17555285A JP H0424860 B2 JPH0424860 B2 JP H0424860B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- groove
- semiconductor board
- mesa
- linear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Weting (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60175552A JPS6235642A (ja) | 1985-08-09 | 1985-08-09 | 半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60175552A JPS6235642A (ja) | 1985-08-09 | 1985-08-09 | 半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6235642A JPS6235642A (ja) | 1987-02-16 |
| JPH0424860B2 true JPH0424860B2 (cs) | 1992-04-28 |
Family
ID=15998074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60175552A Granted JPS6235642A (ja) | 1985-08-09 | 1985-08-09 | 半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6235642A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5593815A (en) * | 1989-07-31 | 1997-01-14 | Goldstar Co., Ltd. | Cleaving process in manufacturing a semiconductor laser |
-
1985
- 1985-08-09 JP JP60175552A patent/JPS6235642A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6235642A (ja) | 1987-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5005071A (en) | Semiconductor device | |
| US3844858A (en) | Process for controlling the thickness of a thin layer of semiconductor material and semiconductor substrate | |
| US3623218A (en) | Method for determining depth of lapping of dielectrically isolated integrated circuits | |
| US3969749A (en) | Substrate for dielectric isolated integrated circuit with V-etched depth grooves for lapping guide | |
| GB1096484A (en) | Improvements in or relating to semiconductor circuits | |
| JPH0424860B2 (cs) | ||
| JPH04215456A (ja) | スクライブライン付きウエハ並びに、その製造方法 | |
| GB1440349A (en) | Method of manufacturing etched patterns | |
| JPS6211491B2 (cs) | ||
| JPH02158160A (ja) | リードフレームの製造方法 | |
| JPH036824A (ja) | 半導体装置の製造方法 | |
| IE33405L (en) | Dividing semiconductor wafers into pellets | |
| JPH0410735B2 (cs) | ||
| JPS6347331B2 (cs) | ||
| JPS63117428A (ja) | 半導体装置の製造方法 | |
| JPH0831896A (ja) | 高濃度ボロン拡散層の厚さ測定方法 | |
| JPS6171635A (ja) | 半導体装置の製造方法 | |
| JPS62176142A (ja) | 誘電体分離基板の製造方法 | |
| KR0143576B1 (ko) | 오버레이 측정용 패턴 | |
| JPS60160124A (ja) | 半導体装置の製造方法 | |
| JPH0562818B2 (cs) | ||
| JPS5575221A (en) | Manufacturing semiconductor | |
| JPS60160125A (ja) | 半導体装置の製造方法 | |
| JPS6132424A (ja) | 半導体装置 | |
| JPS58141390A (ja) | シリコン板のエツチング方法 |