JPH0422345B2 - - Google Patents

Info

Publication number
JPH0422345B2
JPH0422345B2 JP60074804A JP7480485A JPH0422345B2 JP H0422345 B2 JPH0422345 B2 JP H0422345B2 JP 60074804 A JP60074804 A JP 60074804A JP 7480485 A JP7480485 A JP 7480485A JP H0422345 B2 JPH0422345 B2 JP H0422345B2
Authority
JP
Japan
Prior art keywords
mask
region
nitride film
source
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60074804A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61232678A (ja
Inventor
Michio Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60074804A priority Critical patent/JPS61232678A/ja
Publication of JPS61232678A publication Critical patent/JPS61232678A/ja
Publication of JPH0422345B2 publication Critical patent/JPH0422345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Element Separation (AREA)
JP60074804A 1985-04-09 1985-04-09 半導体集積回路装置の製造方法 Granted JPS61232678A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60074804A JPS61232678A (ja) 1985-04-09 1985-04-09 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60074804A JPS61232678A (ja) 1985-04-09 1985-04-09 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61232678A JPS61232678A (ja) 1986-10-16
JPH0422345B2 true JPH0422345B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-04-16

Family

ID=13557859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60074804A Granted JPS61232678A (ja) 1985-04-09 1985-04-09 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61232678A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2676769B2 (ja) * 1988-03-08 1997-11-17 日本電気株式会社 半導体装置
JPH0756893B2 (ja) * 1988-12-05 1995-06-14 日本電気株式会社 耐放射線性ｍｉｓ型半導体集積回路の製造方法
JP2500318B2 (ja) * 1989-05-25 1996-05-29 工業技術院長 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS61232678A (ja) 1986-10-16

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