JPH04220574A - Tool for measuring semiconductor device - Google Patents
Tool for measuring semiconductor deviceInfo
- Publication number
- JPH04220574A JPH04220574A JP41190490A JP41190490A JPH04220574A JP H04220574 A JPH04220574 A JP H04220574A JP 41190490 A JP41190490 A JP 41190490A JP 41190490 A JP41190490 A JP 41190490A JP H04220574 A JPH04220574 A JP H04220574A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- lead
- tool
- substrate
- presser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 238000005259 measurement Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000009413 insulation Methods 0.000 abstract 3
- 230000014759 maintenance of location Effects 0.000 abstract 2
- 238000012360 testing method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、GaAsを用いた電界
効果トランジスタ(以下、FETという)などの半導体
装置を高温下等の環境において電気的特性を測定する際
に用いられる測定用治具の構造に関するものである。[Industrial Application Field] The present invention relates to a measuring jig used to measure the electrical characteristics of semiconductor devices such as field effect transistors (hereinafter referred to as FETs) using GaAs in environments such as high temperatures. It's about structure.
【0002】0002
【従来の技術】FETなどの半導体装置は、信頼性評価
のために高温・高湿度などの過酷な環境下での動作試験
を行うことが必要となる。そのため、半導体装置を過酷
な環境下で確実に電気的に接続し、かつ、絶縁する測定
用治具が用いられている。特に、GaAsなどのバンド
ギャップがSiよりも広い半導体材料を用いた半導体装
置では、200℃以上の高い温度での動作が可能であり
、信頼性評価においてもそれ以上の高温での試験が行わ
れている。そのため、そのような高温で半導体装置を動
作させるための測定用治具が必要となる。2. Description of the Related Art Semiconductor devices such as FETs require operation tests under harsh environments such as high temperature and high humidity for reliability evaluation. Therefore, measurement jigs are used that reliably electrically connect and insulate semiconductor devices under harsh environments. In particular, semiconductor devices using semiconductor materials such as GaAs, which have a wider band gap than Si, can operate at temperatures as high as 200°C or higher, and reliability evaluations are conducted at even higher temperatures. ing. Therefore, a measurement jig is required to operate the semiconductor device at such high temperatures.
【0003】0003
【発明が解決しようとする課題】しかしながら、このよ
うな高温での試験に用いられる測定用治具は提供されて
いない。通常用いられる測定用治具は、高分子樹脂材料
などで構成されており、高温では機械的・電気的な特性
が十分でない。また、このような測定用治具は構造・形
状が複雑なため、セラミックなどの高温で安定な材料で
構成することが難しくかつ高価となる。本発明は、これ
らの問題を解決したもので、単純な構造で、高温での使
用に適した構造の測定用治具を提供することを目的とす
る。[Problems to be Solved by the Invention] However, a measuring jig for use in such high-temperature tests has not been provided. Measurement jigs that are commonly used are made of polymeric resin materials and do not have sufficient mechanical and electrical properties at high temperatures. Furthermore, since such a measuring jig has a complicated structure and shape, it is difficult and expensive to construct it from a material that is stable at high temperatures, such as ceramic. The present invention solves these problems and aims to provide a measuring jig having a simple structure and suitable for use at high temperatures.
【0004】0004
【課題を解決するための手段】本発明による測定用治具
は、本体部と複数のリード部からなる半導体装置の測定
に用いるものであり絶縁性の基体、該基体表面の前記リ
ード部と接続する位置に設けられた配線、該配線上の前
記リード部を絶縁部分を介して弾性的に押さえる押さえ
具、該押さえ具が保持され、前記半導体装置に対応した
保持部、および、該保持部を前記基体に脱着する固定手
段を含むことを要旨とする。[Means for Solving the Problems] A measuring jig according to the present invention is used for measuring a semiconductor device consisting of a main body and a plurality of lead parts, and includes an insulating base and a connection with the lead parts on the surface of the base. a holding part for holding the holding part and corresponding to the semiconductor device; The gist is to include a fixing means that is attached to and detached from the base body.
【0005】[0005]
【作用】半導体装置のリード部を絶縁部分を介して弾性
的に押さえるので、リード部のみが加圧・固定され、半
導体装置が機械的に破壊される応力が加わることが少な
い。また、単純な構造の構成部品から構成されているの
で、高温でも使用可能な加工性の悪い材料を用いること
もでき高温での測定にも適用できる。[Operation] Since the lead portion of the semiconductor device is elastically pressed through the insulating portion, only the lead portion is pressurized and fixed, and stress that would mechanically destroy the semiconductor device is less likely to be applied. Furthermore, since it is composed of components with a simple structure, it is possible to use materials with poor workability that can be used even at high temperatures, and it can also be applied to measurements at high temperatures.
【0006】[0006]
【実施例】以下、本発明の一実施例であるFETの高温
動作時の測定用治具の構造を図1および図2を用いて説
明する。被測定物であるFET1は、GaAs半導体を
用いたショットキー接合ゲート型であり、そのパッケー
ジはセラミック製の本体部11と、その本体部11から
平面状に延びる4本のリード部12からなる。リード部
12は、FET1のゲート・ソース・ドレインの各電極
と対応している。Embodiment The structure of a measuring jig for high temperature operation of an FET, which is an embodiment of the present invention, will be described below with reference to FIGS. 1 and 2. The FET 1, which is the object to be measured, is a Schottky junction gate type using a GaAs semiconductor, and its package consists of a ceramic main body 11 and four lead parts 12 extending planarly from the main body 11. The lead portion 12 corresponds to the gate, source, and drain electrodes of the FET 1.
【0007】FET1は、基体である基板2と保持部で
あるブロック3の間に保持される。基板2は、耐熱性の
絶縁材料であるポリイミド樹脂からなり、FETの本体
部11が収納される大きさの凹部21が設けられ、また
、リード部12がそれぞれ電気的に接続される印刷回路
からなる配線22が設けられている。この配線21を介
してFET1の各電極は動作試験のための電源装置、電
圧の測定装置など(図示せず)に接続されている。The FET 1 is held between a substrate 2, which is a base body, and a block 3, which is a holding part. The substrate 2 is made of polyimide resin, which is a heat-resistant insulating material, and is provided with a recess 21 large enough to accommodate the main body 11 of the FET. A wiring 22 is provided. Each electrode of the FET 1 is connected via this wiring 21 to a power supply device, a voltage measuring device, etc. (not shown) for operation testing.
【0008】このリード部12と配線21の接続を固定
するためにリード部12上をテフロン樹脂からなる絶縁
性の押さえ棒31が押さえている。この押さえ棒31は
、コイル状スプリング32を介してアルミ金属製のブロ
ック3に接続されている。なお、ブロック3には、押さ
え棒31のガイドとなる溝33とFETの本体部11の
収納に障害とならないように凹部34が設けられている
。ブロック3は基板2に複数のねじ4を固定手段として
固定されている。[0008] In order to fix the connection between the lead portion 12 and the wiring 21, an insulating presser rod 31 made of Teflon resin presses down on the lead portion 12. This presser bar 31 is connected to the block 3 made of aluminum metal via a coiled spring 32. Note that the block 3 is provided with a groove 33 that serves as a guide for the presser bar 31 and a recess 34 so as not to impede storage of the FET main body 11. The block 3 is fixed to the substrate 2 using a plurality of screws 4 as fixing means.
【0009】次に、本実施例を用いた高温動作測定の方
法を説明する。被測定物であるFET1の本体部11を
基板2の凹部21に置き、リード部12をそれぞれ所定
の配線22上に置く。次に、ブロック3をFET1上か
ら被せ、ねじ4により基板2に固定する。基板2上には
複数(通常、数10個)のFET1を固定するため、複
数のブロック3が装着される。基板2を高温恒温槽に装
着して、高温恒温槽の外に設けられた動作試験のための
電源装置、電圧の測定装置などと配線22間を接続する
。その後、高温恒温槽を所定温度(150℃)に加熱し
て動作試験を行う。Next, a method of measuring high temperature operation using this embodiment will be explained. The body portion 11 of the FET 1, which is the object to be measured, is placed in the recess 21 of the substrate 2, and the lead portions 12 are placed on respective predetermined wirings 22. Next, block 3 is placed over FET 1 and fixed to substrate 2 with screws 4. A plurality of blocks 3 are mounted on the substrate 2 in order to fix a plurality (usually several tens) of FETs 1. The board 2 is mounted in a high-temperature constant temperature oven, and the wiring 22 is connected to a power supply device, a voltage measuring device, etc. for operation testing provided outside the high-temperature constant temperature oven. Thereafter, the high temperature constant temperature bath is heated to a predetermined temperature (150° C.) and an operation test is performed.
【0010】特に、本実施例によれば、狭い恒温槽内に
多くの被試験物であるFET1を装着することができ、
同時に多数個の測定を行うことができる。また、被試験
物の周囲に金属製ブロックを被せるので被測定物の温度
を均一とすることができ、試験の条件精度を高めること
ができる。In particular, according to this embodiment, a large number of FETs 1 to be tested can be installed in a narrow constant temperature chamber.
Multiple measurements can be taken simultaneously. Furthermore, since a metal block is placed around the object to be tested, the temperature of the object to be measured can be made uniform, and the accuracy of test conditions can be improved.
【0011】[0011]
【発明の効果】以上説明したように本発明による測定用
治具は、本体部と複数のリード部からなる半導体装置の
測定するものであり絶縁性の基体、該基体表面の前記リ
ード部と接続する位置に設けられた配線、該配線上の前
記リード部を絶縁部分を介して弾性的に押さえる押さえ
具、該押さえ具が保持され、前記半導体装置に対応した
保持部、および、該保持部を前記基体に脱着する固定手
段を含むことを要旨とする。As explained above, the measuring jig according to the present invention is used to measure a semiconductor device consisting of a main body and a plurality of lead parts, and includes an insulating base and a connection with the lead parts on the surface of the base. a holding part for holding the holding part and corresponding to the semiconductor device; The gist is to include a fixing means that is attached to and detached from the base body.
【0012】したがって、リード部のみが加圧され、固
定されるので、半導体装置を破壊するようなことがない
。また、測定用治具が単純な構造の構成部品から構成さ
れているので、高温でも使用可能な加工性の悪い材料を
用いることもでき、取扱時に破損することも少ない。[0012] Therefore, since only the lead portions are pressurized and fixed, the semiconductor device will not be destroyed. Furthermore, since the measurement jig is composed of components with a simple structure, it is possible to use materials with poor workability that can be used even at high temperatures, and is less likely to be damaged during handling.
【図1】本発明の実施例である測定用治具を説明するた
めの断面図である。FIG. 1 is a sectional view for explaining a measuring jig that is an embodiment of the present invention.
【図2】本発明の実施例である測定用治具を説明するた
めの平面図である。FIG. 2 is a plan view for explaining a measuring jig that is an embodiment of the present invention.
1 FET(半導体装置) 11 本体部 12 リード部 2 基板(絶縁性の基体) 21 凹部 22 配線 3 ブロック(保持部) 31 押さえ棒(押さえ具) 32 スプリング(弾性手段) 4 ねじ(固定手段) 1 FET (semiconductor device) 11 Main body 12 Lead part 2 Substrate (insulating base) 21 Recess 22 Wiring 3 Block (holding part) 31 Presser bar (presser) 32 Spring (elastic means) 4 Screw (fixing means)
Claims (1)
体装置の測定用治具において、絶縁性の基体、該基体表
面の前記リード部と接続する位置に設けられた配線、該
配線上の前記リード部を絶縁部分を介して弾性的に押さ
える押さえ具、該押さえ具が保持され、前記半導体装置
に対応した保持部、および、該保持部を前記基体に脱着
する固定手段を含むことを特徴とする半導体装置の測定
用治具。1. A semiconductor device measurement jig comprising a main body and a plurality of lead parts, including an insulating base, a wire provided on the surface of the base at a position connected to the lead part, and a wire on the wire. The semiconductor device is characterized in that it includes a presser that elastically presses the lead portion through an insulating portion, a holding portion in which the presser is held and corresponds to the semiconductor device, and a fixing means for attaching and detaching the holding portion to the base body. A jig for measuring semiconductor devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP41190490A JPH04220574A (en) | 1990-12-20 | 1990-12-20 | Tool for measuring semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP41190490A JPH04220574A (en) | 1990-12-20 | 1990-12-20 | Tool for measuring semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04220574A true JPH04220574A (en) | 1992-08-11 |
Family
ID=18520820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP41190490A Pending JPH04220574A (en) | 1990-12-20 | 1990-12-20 | Tool for measuring semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04220574A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0666030U (en) * | 1991-08-05 | 1994-09-16 | 日本アビオニクス株式会社 | IC burn-in jig |
JP2017054806A (en) * | 2015-08-20 | 2017-03-16 | マイクロナス ゲー・エム・ベー・ハー | Contact device system |
-
1990
- 1990-12-20 JP JP41190490A patent/JPH04220574A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0666030U (en) * | 1991-08-05 | 1994-09-16 | 日本アビオニクス株式会社 | IC burn-in jig |
JP2017054806A (en) * | 2015-08-20 | 2017-03-16 | マイクロナス ゲー・エム・ベー・ハー | Contact device system |
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