JPH04115545A - Probe card - Google Patents

Probe card

Info

Publication number
JPH04115545A
JPH04115545A JP2238713A JP23871390A JPH04115545A JP H04115545 A JPH04115545 A JP H04115545A JP 2238713 A JP2238713 A JP 2238713A JP 23871390 A JP23871390 A JP 23871390A JP H04115545 A JPH04115545 A JP H04115545A
Authority
JP
Japan
Prior art keywords
probe card
chip
temperature
contact
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2238713A
Other languages
Japanese (ja)
Inventor
Yasuhiro Yamazaki
泰寛 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2238713A priority Critical patent/JPH04115545A/en
Publication of JPH04115545A publication Critical patent/JPH04115545A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、ICチップの電気的特性をテストするIC
ウェハテスト装置のプローブカードに関するものである
。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an IC chip for testing the electrical characteristics of an IC chip.
The present invention relates to a probe card for a wafer test device.

〔従来の技術〕[Conventional technology]

第3図は従来のICウェハテスト装置の構成の部を示す
一部破砕分解斜視図、第4図はICウェハ内のICチッ
プに第3図のプローブカードを接触させた状態を示す一
部破砕斜視図、第5図は第4図の状態時の上面図を示す
。
Fig. 3 is a partially exploded perspective view showing the configuration of a conventional IC wafer test device, and Fig. 4 is a partially broken exploded view showing the state in which the probe card shown in Fig. 3 is in contact with an IC chip inside an IC wafer. The perspective view and FIG. 5 show a top view in the state of FIG. 4.

図において、(2)はプローブカード、(3)はプロー
ブカード針、(4)はICウェハ、(5)はICチップ
、(6)は電極パッド、(7)はステージ、(8)は温
度センサである。
In the figure, (2) is a probe card, (3) is a probe card needle, (4) is an IC wafer, (5) is an IC chip, (6) is an electrode pad, (7) is a stage, and (8) is a temperature It is a sensor.

次に動作について説明する。Next, the operation will be explained.

ウェハテスト装置のステージ(7)上にICプローブカ
ード(2)の構成の一部である導電性のプローブカード
針(3)を接触させ、プローブカード針(3)を通じて
ICチップ(5)の電気的特性を測定する。
A conductive probe card needle (3), which is part of the structure of the IC probe card (2), is brought into contact with the stage (7) of the wafer test equipment, and the electricity of the IC chip (5) is detected through the probe card needle (3). Measure physical characteristics.

IC測定には温度保証する測定があるが、上記測定をI
Cチップ(5)に於いて行う場合、その温度測定は従来
第3図に示す通り、ICウェハテスト装置のステージ(
7)内に組み込まれた温度センサ(8)によって行われ
ている。
IC measurements include measurements that guarantee temperature, but the above measurements are
When temperature measurement is performed on the C chip (5), the temperature measurement is conventionally performed on the stage (
7) by means of a temperature sensor (8) integrated in the temperature sensor (8).

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来のプローブカードは以上のように構成されているの
で、ICウェハテスト装置によフて温度保証測定をする
場合、ステージ内の温度を測定しているので、ICチッ
プの温度測定が正確に行なわれていないという問題かあ
った。
Conventional probe cards are configured as described above, so when performing temperature guaranteed measurements using IC wafer test equipment, the temperature inside the stage is being measured, making it difficult to accurately measure the temperature of the IC chip. There was a problem that it wasn't.

この発明は、上記のような問題点を解消するためになさ
れたもので、ICチップの温度保証測定が正確に行なえ
るプローブカードを得ることを目的とする。
The present invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain a probe card that can accurately measure the temperature of an IC chip.

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係るプローブカードはICチップの電気的特
性を測定する為に、ICチップの電極パッドに接触させ
るプローブカード針と、1.0チツプの電極パッド以外
に接触させる温度センサで構成したものである。
The probe card according to the present invention is composed of a probe card needle that is brought into contact with the electrode pads of the IC chip and a temperature sensor that is brought into contact with areas other than the electrode pads of the 1.0 chip in order to measure the electrical characteristics of the IC chip. be.

〔作用〕[Effect]

この発明におけるプローブカードは、内蔵する温度セン
サがICチップに接触し、ICチップの温度を正確に測
定できる。
In the probe card according to the present invention, the built-in temperature sensor comes into contact with the IC chip and can accurately measure the temperature of the IC chip.

〔実施例〕 以下、この発明に係るプローブカードの一実施例を図に
ついて説明する。
[Embodiment] Hereinafter, an embodiment of a probe card according to the present invention will be described with reference to the drawings.

第1図はICウェハ内のICチップに、プローブカード
を接触させた時の状態を示す一部破砕斜視図、第2図は
第1図の状態時の上面図である。
FIG. 1 is a partially exploded perspective view showing a state when a probe card is brought into contact with an IC chip in an IC wafer, and FIG. 2 is a top view of the state shown in FIG. 1.

図において、(2)〜(6)は第3図および第4図の従
来例に示したものと同等であるので説明を省略する。(
1)はプローブカード(2)でICチップ(5)のテス
トを行う場合、ICチップ(5)表面の電気的に絶縁さ
れた箇所に接触するようにプローブカード(2)に構成
された温度センサである。
In the figure, (2) to (6) are the same as those shown in the conventional example of FIGS. 3 and 4, and therefore their explanation will be omitted. (
1) When testing the IC chip (5) with the probe card (2), a temperature sensor is configured on the probe card (2) so as to come into contact with an electrically insulated part on the surface of the IC chip (5). It is.

次に動作について説明する。ICウェハテスト装置に於
いて温度保証測定を行う場合、その温度測定はプローブ
カード(2)に構成された温度センサ(1)によって行
う。この時温度センサ(1)は被測定のICチップ(5
)表面に接触しているので正確な温度測定が可能である
。ここて温度センサ(1)はICチップ(5)表面の電
気的に絶縁された箇所に接触しているのでICチップ(
5)の電気的特性測定にはなんら影響を及ぼさない。
Next, the operation will be explained. When temperature assurance measurement is performed in the IC wafer test equipment, the temperature measurement is performed by a temperature sensor (1) configured on a probe card (2). At this time, the temperature sensor (1) is connected to the IC chip (5) to be measured.
) Since it is in contact with the surface, accurate temperature measurement is possible. Here, since the temperature sensor (1) is in contact with an electrically insulated part on the surface of the IC chip (5),
It has no effect on the electrical characteristics measurement in 5).

また、プローブカード(2)で構成されたICウェハテ
スト装置は常温に於けるICチップ(5)自身の発熱等
の測定が可能である。
Further, the IC wafer test device composed of the probe card (2) is capable of measuring heat generation, etc. of the IC chip (5) itself at room temperature.

〔発明の効果) 以上のようにこの発明によれば、ICチップの温度保証
測定が、より正確に行えるという効果がある。
[Effects of the Invention] As described above, according to the present invention, there is an effect that temperature guaranteed measurement of an IC chip can be performed more accurately.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、この発明に係るプローブカードの一実施例に
よるICウェハ内のICチップにプローブカードを接触
させた時の状態を示す一部破砕斜視図、第2図は第1図
の状態時の上面図、第3図は従来のICウェハテスト装
置の構成の一部を示す一部破砕分解斜視図、第4図はI
Cウェハ内のICチップに第3図のプローブカードを接
触させた状態を示す一部破砕斜視図、第5図は第4図の
状態時の上面図である。 図に於いて、(1)は温度センサ、(2)はプローブカ
ード、(3)はプローブカード針、(4)はICウェハ
、(5)はICチップ、(6)は電極パッドである。 尚、各図中、同一符号は同一 または相当部分を示す
FIG. 1 is a partially exploded perspective view showing the state when the probe card is brought into contact with an IC chip in an IC wafer according to an embodiment of the probe card according to the present invention, and FIG. 2 shows the state shown in FIG. 1. 3 is a partially exploded exploded perspective view showing part of the configuration of a conventional IC wafer test device, and FIG. 4 is a top view of the IC wafer test device.
FIG. 5 is a partially exploded perspective view showing a state in which the probe card of FIG. 3 is in contact with an IC chip in a C wafer, and FIG. 5 is a top view of the state shown in FIG. 4. In the figure, (1) is a temperature sensor, (2) is a probe card, (3) is a probe card needle, (4) is an IC wafer, (5) is an IC chip, and (6) is an electrode pad. In addition, the same symbols in each figure indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] ICチップの電気的特性をテストするICウエハテスト
装置に於けるICチップ電極への接触子が多数構成され
たプローブカードに於いて、被測定のICチップ自身の
温度を測定する為の温度センサが組み込まれたことを特
徴とするプローブカード。
In an IC wafer test device that tests the electrical characteristics of an IC chip, a probe card that has many contacts to IC chip electrodes has a temperature sensor that measures the temperature of the IC chip itself. A probe card characterized by the built-in probe card.
JP2238713A 1990-09-05 1990-09-05 Probe card Pending JPH04115545A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2238713A JPH04115545A (en) 1990-09-05 1990-09-05 Probe card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2238713A JPH04115545A (en) 1990-09-05 1990-09-05 Probe card

Publications (1)

Publication Number Publication Date
JPH04115545A true JPH04115545A (en) 1992-04-16

Family

ID=17034166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2238713A Pending JPH04115545A (en) 1990-09-05 1990-09-05 Probe card

Country Status (1)

Country Link
JP (1) JPH04115545A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774218A (en) * 1993-09-03 1995-03-17 Nec Corp IC test method and its probe card
JP2007129090A (en) * 2005-11-04 2007-05-24 Tokyo Seimitsu Co Ltd Wafer test system, prober, wafer test method and probe card
JP2007227444A (en) * 2006-02-21 2007-09-06 Ricoh Co Ltd IC test method, probe card, inspection prober, and IC test apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0774218A (en) * 1993-09-03 1995-03-17 Nec Corp IC test method and its probe card
JP2007129090A (en) * 2005-11-04 2007-05-24 Tokyo Seimitsu Co Ltd Wafer test system, prober, wafer test method and probe card
JP2007227444A (en) * 2006-02-21 2007-09-06 Ricoh Co Ltd IC test method, probe card, inspection prober, and IC test apparatus

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