JPS59188930A - Tester - Google Patents

Abstract

PURPOSE:To enable to measure an IC without using a probe card and a prober by a method wherein a device connected between both the terminals thereof with conductive layers in an insulating substrate is used, whose respective edges on one side are the connecting terminals with the electrodes of the IC, and the edges on another side are the connecting terminals to an IC tester. CONSTITUTION:An IC8 on a wafer 9 has Au electrodes 7, and the ceramics 11 of a tester 10 has electrode terminals 5 corresponding to the electrodes 7. The terminals 5 are connected to connecting terminals 4 to be connected to a tester table 2 according to Au layers 12. When the terminals 4 are made to come in contact with the connecting pins 6 of the tester base 2, the electric characteristic of the IC8 can be measured with favorable precision without necessitating a probe card, a prober and a connecting cable 3. Leads 20, etc. are annexed for making contact between the device 10 and the tester base 2, and when the IC is the specified IC, a circuit element is mounted in the device 10 or provided in the insulator 11. Or by providing a resistance layer in the insulator 11, or by flowing a liquid N2 in open hole parts, measurement of the characteristic of the IC8 can be performed also at a high temperature or at a low temperature.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an inspection device for measuring electrical characteristics of a semiconductor integrated circuit device (hereinafter referred to as an IC).

In order to measure all the electrical characteristics of an IC formed on a semiconductor integrated circuit device substrate (hereinafter referred to as ``WENO'') during the IC manufacturing process, the UENO 1- is intermittently fed by a device (hereinafter referred to as a prober). The temperature characteristics of 9 ICs are measured using an IC tester on the wafer. At this time, in order to connect between the IC tester and the IC, the prober generally uses something called a globe card, which has a probe compatible with the IC's voltage fixed to an insulating substrate. However, the electrodes of the IC are usually 100 μm thick. The number of stains continues to increase due to the size of the corners and improvements in the functionality of ICs. For this reason, it is difficult to make precise contact with a large number of probe wires to the electrodes of the IC.Also, since the connection between the IC tester and the probe card is made by a couple, the external noise may be received and the accuracy may be affected. It is difficult to perform IC measurements. In addition, the relative positioning of the probe card probe and the IC electrode is performed using a prober, but achieving full precision positioning at this time requires a systematic technology, and recent advances in There is a tendency to have automatic probers also process IC measurement results.

As described above, glove cards and probers are required to have more sophisticated technology year by year, and a huge amount of development costs are required. In addition, the installation area for each prober is approximately 2
- Requires a large amount of installation surface.

However, according to the present invention, one end of the insulating substrate has a terminal for contacting the IC tester, and the other end has a terminal for connecting to the IC tester, and between the terminals? An IC inspection device formed of a conductive layer is obtained. By using such a device, it becomes possible to measure ICs without the need for a glove card or a prober, which have been used in conventional IC measurements.

In other words, not only the above-mentioned problems of positioning the glove card and noise on the cable are solved, but also the cost and installation area of the prober are eliminated.

Furthermore, by using the present invention, marking was performed on ICEs that were found to be defective as a result of measuring the electrical characteristics of ICs.
This marking is also unnecessary. It becomes possible to memorize the positions of good and defective ICs on the wafer and automatically mount all the good IC's in the IC mounting process.

Embodiments of the present invention will be described below with reference to drawings.

FIG. 1 is a schematic diagram showing how the electrical characteristics of an IC are measured using the inspection apparatus 10 of the present invention. 2 to 5g8 are all cross-sectional views of the inspection apparatus tlO of the present invention. First, FIG. 1 (2) shows the inspection device 10 of the present invention.
FIG. 1 (81) shows the state of connection from the tester station 2 to the wafer 9.

The manner of connection of the inspection device 10 will be explained in more detail with reference to FIG. The electrodes 7 of the IC8 formed on Ueno-9 are entirely made of aluminum or gold. On the other hand, the insulator 11 of the food inspection device 10 is made of, for example, ceramic, alumina, quartz, etc.
1 has all conductive electrode terminals 5 corresponding to the electrodes 7 of the IC 8, and a tester terminal 4 for connecting to the tester station 2 is formed from the electrode terminal 5 through a conductive layer 12. Techniques for forming the four conductive layers 2 include a vapor layer method, a printing method, a low-temperature sintering method, and the like. In order to connect test station 2 with
) It is necessary to install the contact pin b shown in FIG. I on toe 9 wafer 9
Since the C8's electrodes 7 and the food inspection device 10 are all connected to the test station 2, there is no need for the glove card and prober that were used in the past, as well as the cables that connected them. 3 and 4 show a tester terminal 4 for bringing the inspection device 10 into contact with the test station 2.
This figure shows the shape of the leads 20 and 30 from the top, and a socket is required on the client station 2 side to connect all the leads 20 and 30. It is desirable that this socket has a mechanism that allows it to be tightened after the lead 20.30 comes into contact.
, when measuring the characteristics, depending on the specific IC 8, a circuit wire 4o may be required.
(1 represents the inspection device 10 mounted on the side eating device 10 or formed in the insulator 11.

In particular, in FIG. 6, since the circuit confectionery 40 is formed in the insulator 11, the circuit confectionery 40 of the calibration device 10 in FIG.
There is no need to consider the digits ftt- for cases with a 7 such as 0.

Regarding FIG. 7, by forming a resistance layer 5θ in the insulator 11 in the inspection device 10 and applying a current, the inspection layer tlO
By heating the wafer 9, it is possible to measure the electrical characteristics of the IC 8 under high temperature conditions.

In contrast to the inspection device 10 shown in FIG. 7, when all electrical characteristics are to be measured under low temperature conditions, an opening 60 is formed in the insulator 11 as in the inspection device 10 shown in FIG. Alternatively, it is possible to measure the electrical characteristics of the IC 8 by pouring liquid helium # into the inspection device 10 and the wafer 9 under conditions of low temperature.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing a state where the electrical characteristics of an IC are being measured using the testing device of the present invention. FIGS. 2 to 4 are views each showing an embodiment of a structure for bringing the tester terminal of the inspection device of the present invention into contact with the test station. FIGS. 5 and 6 are diagrams showing an embodiment of the present invention mounted on a circuit element or formed within the testing apparatus, respectively. Figures 7 and 8 are
This is because the test apparatus of the present invention can be used at high or low temperatures. In the figure, 1...IC tester, 2...・・・
・Test station, 3...Cable, 4・
...Tester terminal, 5...Electrode terminal, 6...Contact pin, 7...Electrode, 8...IC, 9. ...Wafer, 10
...Inspection device, 11...Insulator, 12
... Conductive layer, 20.30 ... Lead,
40...Circuit confectionery, 50...Resistance layer,
60...Open hole part. Yasu 1st Ward (B)

Claims (1)

[Scope of Claims] (1) A device for measuring the electrical characteristics of FC in the manufacturing process of IC, which has a plurality of terminals corresponding to the electrodes of the IC formed on the wafer at one end of the insulator. The test device is characterized in that the terminal is connected to the terminal corresponding to the station of the IC tester at the other end of the insulator through the conductive layer. The testing device according to claim 1, wherein the terminals correspond to the electrodes of all ICs on the wafer. (3) Conductive leads are attached to the terminals corresponding to the stations of the IC tester. The inspection device according to claim (1), characterized in that: (4) IC'
A special tff-applied area 1g characterized in that a circuit element for measuring the electrical properties of the insulator is formed on the outer wall of the insulator.
Inspection device described in (1). (5) A patent characterized in that a material having electrical resistance for measuring the characteristics of an IC under high temperature conditions is formed within the insulator and can be heated by applying an electric current. An f-detection device according to claim (1). (6) In order to measure the electrical characteristics of an IC under high temperature conditions, an opening is formed in the insulator so that liquid nitrogen, liquid helium, etc. can be injected into the insulator. Inspection device according to item r).