JPH0422030B2 - - Google Patents

Info

Publication number
JPH0422030B2
JPH0422030B2 JP8637783A JP8637783A JPH0422030B2 JP H0422030 B2 JPH0422030 B2 JP H0422030B2 JP 8637783 A JP8637783 A JP 8637783A JP 8637783 A JP8637783 A JP 8637783A JP H0422030 B2 JPH0422030 B2 JP H0422030B2
Authority
JP
Japan
Prior art keywords
memory
voltage
terminal
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8637783A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59211281A (ja
Inventor
Kazunari Hayafuchi
Toshiaki Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP58086377A priority Critical patent/JPS59211281A/ja
Publication of JPS59211281A publication Critical patent/JPS59211281A/ja
Publication of JPH0422030B2 publication Critical patent/JPH0422030B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP58086377A 1983-05-17 1983-05-17 メモリ−マトリックス回路 Granted JPS59211281A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58086377A JPS59211281A (ja) 1983-05-17 1983-05-17 メモリ−マトリックス回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58086377A JPS59211281A (ja) 1983-05-17 1983-05-17 メモリ−マトリックス回路

Publications (2)

Publication Number Publication Date
JPS59211281A JPS59211281A (ja) 1984-11-30
JPH0422030B2 true JPH0422030B2 (enrdf_load_html_response) 1992-04-15

Family

ID=13885184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58086377A Granted JPS59211281A (ja) 1983-05-17 1983-05-17 メモリ−マトリックス回路

Country Status (1)

Country Link
JP (1) JPS59211281A (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2655765B2 (ja) * 1991-05-29 1997-09-24 ローム株式会社 半導体装置
WO2002019342A1 (fr) * 2000-08-30 2002-03-07 Hitachi, Ltd. Memoire permanente

Also Published As

Publication number Publication date
JPS59211281A (ja) 1984-11-30

Similar Documents

Publication Publication Date Title
JP3342730B2 (ja) 不揮発性半導体記憶装置
JPS5542307A (en) Semiconductor memory unit
US7164606B1 (en) Reverse fowler-nordheim tunneling programming for non-volatile memory cell
KR910003387B1 (ko) 주승압회로의 출력전압승압용 부승압회로
JP3520532B2 (ja) Ｎａｎｄ型不揮発性メモリの駆動方法
JP2005328023A (ja) Ｎａｎｄフラッシュメモリ素子及びそのウェル形成方法
JP5134975B2 (ja) 半導体集積回路
JPH0422030B2 (enrdf_load_html_response)
JP2004153239A (ja) １トランジスタセルＦｅＲＡＭメモリアレイ
JPH02223097A (ja) 不揮発性半導体メモリ装置
JPS5953637B2 (ja) 記憶回路
JPS62275395A (ja) 半導体集積回路装置
JPH08256473A (ja) 昇圧回路
JPH0666114B2 (ja) 半導体集積回路
JPH0418709B2 (enrdf_load_html_response)
JPH0340956B2 (enrdf_load_html_response)
KR100600461B1 (ko) 반도체 장치
JP2003347435A (ja) 半導体装置
JP2635619B2 (ja) 不揮発性半導体記憶装置
JPH0782753B2 (ja) ダイナミックメモリ装置
JP2679718B2 (ja) フローティングゲート型電界効果トランジスタを使用したメモリ回路
JP3011415B2 (ja) 不揮発性半導体メモリ装置
JPS593975A (ja) 不揮発性記憶素子の書込み用高耐圧トランジスタ構造
JPS5824878B2 (ja) ハンドウタイキオクソウチ
JPH0581070B2 (enrdf_load_html_response)