JPH04211130A - 半導体装置作製方法 - Google Patents
半導体装置作製方法Info
- Publication number
- JPH04211130A JPH04211130A JP3033679A JP3367991A JPH04211130A JP H04211130 A JPH04211130 A JP H04211130A JP 3033679 A JP3033679 A JP 3033679A JP 3367991 A JP3367991 A JP 3367991A JP H04211130 A JPH04211130 A JP H04211130A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- annealing
- hydrogen
- laser
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3033679A JPH04211130A (ja) | 1991-02-01 | 1991-02-01 | 半導体装置作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3033679A JPH04211130A (ja) | 1991-02-01 | 1991-02-01 | 半導体装置作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9974379A Division JPS5623784A (en) | 1979-08-05 | 1979-08-05 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04211130A true JPH04211130A (ja) | 1992-08-03 |
| JPH0566012B2 JPH0566012B2 (enExample) | 1993-09-20 |
Family
ID=12393128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3033679A Granted JPH04211130A (ja) | 1991-02-01 | 1991-02-01 | 半導体装置作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04211130A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012134524A (ja) * | 2003-06-25 | 2012-07-12 | Trustees Of Princeton Univ | 改良型太陽電池 |
| JP2012525008A (ja) * | 2009-04-22 | 2012-10-18 | テトラサン インコーポレイテッド | 太陽電池内の機能膜の局所的レーザ転化による局所的金属接触子 |
-
1991
- 1991-02-01 JP JP3033679A patent/JPH04211130A/ja active Granted
Non-Patent Citations (4)
| Title |
|---|
| APPL.PHYS LETT=1979 * |
| APPLIED PHYSICS LETTERS=1979 * |
| CHARACTERIZATION TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND DEVICES=1978 * |
| SEMICONDUCTOR CHARACTERIZATION TECHNIQUES=1978 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012134524A (ja) * | 2003-06-25 | 2012-07-12 | Trustees Of Princeton Univ | 改良型太陽電池 |
| JP2015179870A (ja) * | 2003-06-25 | 2015-10-08 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 有機感光性オプトエレクトロニックデバイス |
| JP2012525008A (ja) * | 2009-04-22 | 2012-10-18 | テトラサン インコーポレイテッド | 太陽電池内の機能膜の局所的レーザ転化による局所的金属接触子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0566012B2 (enExample) | 1993-09-20 |
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