JPH0419810Y2 - - Google Patents
Info
- Publication number
- JPH0419810Y2 JPH0419810Y2 JP19813583U JP19813583U JPH0419810Y2 JP H0419810 Y2 JPH0419810 Y2 JP H0419810Y2 JP 19813583 U JP19813583 U JP 19813583U JP 19813583 U JP19813583 U JP 19813583U JP H0419810 Y2 JPH0419810 Y2 JP H0419810Y2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- shot
- collector
- base
- sbd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19813583U JPS60106352U (ja) | 1983-12-23 | 1983-12-23 | Ttl集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19813583U JPS60106352U (ja) | 1983-12-23 | 1983-12-23 | Ttl集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60106352U JPS60106352U (ja) | 1985-07-19 |
JPH0419810Y2 true JPH0419810Y2 (enrdf_load_stackoverflow) | 1992-05-06 |
Family
ID=30756865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19813583U Granted JPS60106352U (ja) | 1983-12-23 | 1983-12-23 | Ttl集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60106352U (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0831579B2 (ja) * | 1987-03-25 | 1996-03-27 | 日本電気株式会社 | モノリシツク集積回路 |
-
1983
- 1983-12-23 JP JP19813583U patent/JPS60106352U/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60106352U (ja) | 1985-07-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5084401A (en) | Insulated gate bipolar transistor and method of manufacturing the same | |
JPH0214792B2 (enrdf_load_stackoverflow) | ||
US4365263A (en) | Semiconductor integrated circuit device composed of insulated gate field-effect transistor | |
KR100301411B1 (ko) | 반도체 장치 | |
US4481432A (en) | Programmable output buffer | |
JPH0758734B2 (ja) | 絶縁ゲ−ト型セミカスタム集積回路 | |
JPH0210678Y2 (enrdf_load_stackoverflow) | ||
US3731161A (en) | Semiconductor integrated circuit | |
JPH0555881A (ja) | 遅延回路 | |
JPH0419810Y2 (enrdf_load_stackoverflow) | ||
US5016077A (en) | Insulated gate type semiconductor device and method of manufacturing the same | |
US5285095A (en) | Semiconductor integrated circuit with input protective transistor effective against electric surge | |
JPS6021553A (ja) | 三次元集積回路 | |
JPH0656890B2 (ja) | 伝導度変調型たて型mos―fet | |
JP2840150B2 (ja) | 半導体集積回路及びその層間接続方法 | |
JPH0315350B2 (enrdf_load_stackoverflow) | ||
US4591895A (en) | CMOS circuit with separate power lines to suppress latchup | |
EP0102795B1 (en) | A method of manufacturing a semiconductor device using the master slice technique | |
US5448101A (en) | Semiconductor device having P channel high voltage transistors with improved breakdown voltages | |
JPH0422026B2 (enrdf_load_stackoverflow) | ||
JP2687490B2 (ja) | 論理集積回路 | |
US5856218A (en) | Bipolar transistor formed by a high energy ion implantation method | |
US5910674A (en) | Semiconductor integrated circuit device and method of fabricating the same | |
JPH0817206B2 (ja) | 半導体装置 | |
JPS61129861A (ja) | 半導体装置 |